mateltechИзвестия высших учебных заведений. Материалы электронной техникиIzvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering1609-35772413-6387MISIS10.17073/1609-3577-2015-2-81-94mateltech-164Research ArticleСТАТЬИARTICLESМЕТАЛЛИЧЕСКИЕ НАНОПЛЕНКИ НА МОНОКРИСТАЛЛИЧЕСКОМ КРЕМНИИ: РОСТ, СВОЙСТВА И ПРИМЕНЕНИЕMetallic Nanofilms on Single Crystal Silicon: Growth, Properties and ApplicationsПлюснинН. И.PlyusninN. I.

доктор физ.−мат. наук, доцент, главный научный сотрудник,

ул. Радио, д. 5, Владивосток, 690041

Chief Scientific Officer, Associate Professor, Dr. Sci. (Phys.−Math.),

5 Radio Str., Vladivostok 690041

plusnin@iacp.dvo.ruИнститут автоматики и процессов управления ДВО РАНРоссияInstitute of Automation and Control Processes, FEB RAS (IACP)Russian Federation2015040620161828194Copyright © Плюснин Н.И., 20162016Плюснин Н.И.Plyusnin N.I.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://met.misis.ru/jour/article/view/164

Тонкопленочная система металл — кремний является неизоструктурной и, кроме того, характеризуется ярко выраженными процессами взаимодиффузии и химическими реакциями. Поэтому рост металлических нанопленок на кремнии сопровождается высоким уровнем дефектности пленки, особенно ее границы раздела с подложкой. Также присутствуют напряжения и образуется переходный слой, состоящий из сплавов или соединений (силицидов). Рассмотрены теоретические представления и дан обзор экспериментальных результатов по росту и свойствам металлических нанопленок (включая многослойные) на кремнии, а также краткий обзор их применения. Пленки состоят как из атомно−тонких или субквантово−размерных, так и из квантово−размерных слоев. Предложен процесс низкотемпературного роста пленки, основанный на замораживании растущих слоев в процессе осаждения, путем поддержания пониженной температуры подложки и использования атомного пучка с пониженной тепловой мощностью. В этом процессе использована специальная геометрия системы осаждения, в которой расстояние между источником и подложкой сопоставимо или меньше их размеров. Кроме того, применена временнáя последовательность осаждения, которая обеспечивает поддержание пониженной температуры поверхности подложки за счет длительной выдержки между порциями осаждения. Такой рост атомно−тонких пленок и многослойных нанопленок предотвращает взаимодиффузию между слоями, ослабляет трехмерный рост и усиливает по отношению к этим процессам латеральный слоевой рост.

The metal–silicon thin−film system is not isostructural and furthermore exhibits pronounced interdiffusion and chemical reactions. Therefore the growth of metallic films on silicon leads to a high concentration of defects in the film, especially at its substrate interface. The material also contains stress and a transition layer consisting of melts or compounds (silicides).

We have considered theoretical viewpoints and reviewed experimental data on the growth and properties of metallic nanofilms (including multilayered ones) on silicon, and also provided a brief review of their applications. The films consist either of atomic−sized, quabquantum sized and quantum sized layers. We have suggested a low temperature film growth technology based on freezing growing layers during deposition by maintaining a low temperature of the substrate and using an atomic beam with a reduced heat power. The technology uses a specially shaped deposition system in which the distance between the source and the substrate is comparable to their size or smaller. Furthermore, we use a special time sequence of deposition that provides for a reduced substrate surface temperature due to greater intervals between deposition pulses. This growth method of atomically thin films and multilayered nanofilms excludes interdiffusion between the layers, reduces three−dimensional growth rate and relatively increases lateral layer growth rate.

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The authors declare that there are no conflicts of interest present.