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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mateltech</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений. Материалы электронной техники</journal-title><trans-title-group xml:lang="en"><trans-title>Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1609-3577</issn><issn pub-type="epub">2413-6387</issn><publisher><publisher-name>MISIS</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17073/1609-3577-2015-4-255-260</article-id><article-id custom-type="elpub" pub-id-type="custom">mateltech-223</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Материаловедение и технология. Диэлектрики</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MATERIALS SCIENCE AND TECHNOLOGY. DIELECTRICS</subject></subj-group></article-categories><title-group><article-title>ФОРМИРОВАНИЕ БИДОМЕННОЙ СТРУКТУРЫ В ПЛАСТИНАХ НИОБАТА ЛИТИЯ, ПРЕДНАЗНАЧЕННЫХ ДЛЯ БЕТА–ВОЛЬТАИЧЕСКИХ ГЕНЕРАТОРОВ ПЕРЕМЕННОГО ТОКА</article-title><trans-title-group xml:lang="en"><trans-title>FORMATION OF BIDOMAIN STRUCTURE IN LITHIUM NIOBATE WAFERS FOR BETAVOLTAIC ALTERNATORS</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Малинкович</surname><given-names>М. Д.</given-names></name><name name-style="western" xml:lang="en"><surname>Malinkovich</surname><given-names>M. D.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Малинкович Михаил Давыдович — кандидат физико-математических наук, доцент </p><p>Ленинский просп., д. 4 , Москва, 119991</p></bio><bio xml:lang="en"><p>Mikhail D. Malinkovich — Cand. Sci. (Phys.−Math.), Ass. Prof. </p><p>4 Leninsky Prospekt, Moscow 119049</p></bio><email xlink:type="simple">malinkovich@yandex.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Быков</surname><given-names>А. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Bykov</surname><given-names>A. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Быков Александр Сергеевич — кандидат технических наук, доцент </p><p>Ленинский просп., д. 4 , Москва, 119991</p></bio><bio xml:lang="en"><p>Alexander S. Bykov — Cand. Sci. (Eng.), Ass. Prof.  </p><p>4 Leninsky Prospekt, Moscow 119049</p></bio><email xlink:type="simple">xalexx1349@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Кубасов</surname><given-names>И. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Kubasov</surname><given-names>I. V.</given-names></name></name-alternatives><bio xml:lang="ru"/><bio xml:lang="en"/><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Киселев</surname><given-names>Д. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Kiselev</surname><given-names>D. A.</given-names></name></name-alternatives><bio xml:lang="ru"/><bio xml:lang="en"/><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ксенич</surname><given-names>С. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Ksenich</surname><given-names>S. V.</given-names></name></name-alternatives><bio xml:lang="ru"/><bio xml:lang="en"/><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Жуков</surname><given-names>Р. Н.</given-names></name><name name-style="western" xml:lang="en"><surname>Zhukov</surname><given-names>R. N.</given-names></name></name-alternatives><bio xml:lang="ru"/><bio xml:lang="en"/><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Темиров</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Temirov</surname><given-names>A. A.</given-names></name></name-alternatives><bio xml:lang="ru"/><bio xml:lang="en"/><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Тимушкин</surname><given-names>Н. Г.</given-names></name><name name-style="western" xml:lang="en"><surname>Timushkin</surname><given-names>N. G.</given-names></name></name-alternatives><bio xml:lang="ru"/><bio xml:lang="en"><p>Nikita G. Timushkin — Engineer</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Пархоменко</surname><given-names>Ю. Н.</given-names></name><name name-style="western" xml:lang="en"><surname>Parkhomenko</surname><given-names>Yu. N.</given-names></name></name-alternatives><bio xml:lang="ru"/><bio xml:lang="en"/><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Национальный исследовательский технологический университет «МИСиС»</institution><country>Россия</country></aff><aff xml:lang="en"><institution>National University of Science and Technology «MISIS»</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2015</year></pub-date><pub-date pub-type="epub"><day>13</day><month>12</month><year>2017</year></pub-date><volume>18</volume><issue>4</issue><fpage>255</fpage><lpage>260</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Малинкович М.Д., Быков А.С., Кубасов И.В., Киселев Д.А., Ксенич С.В., Жуков Р.Н., Темиров А.А., Тимушкин Н.Г., Пархоменко Ю.Н., 2017</copyright-statement><copyright-year>2017</copyright-year><copyright-holder xml:lang="ru">Малинкович М.Д., Быков А.С., Кубасов И.В., Киселев Д.А., Ксенич С.В., Жуков Р.Н., Темиров А.А., Тимушкин Н.Г., Пархоменко Ю.Н.</copyright-holder><copyright-holder xml:lang="en">Malinkovich M.D., Bykov A.S., Kubasov I.V., Kiselev D.A., Ksenich S.V., Zhukov R.N., Temirov A.A., Timushkin N.G., Parkhomenko Y.N.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://met.misis.ru/jour/article/view/223">https://met.misis.ru/jour/article/view/223</self-uri><abstract><p>Рассмотрена возможность увеличения эффективности бета−вольтаического генератора за счет применения в качестве пьезоэлектрического преобразователя монокристаллического биморфного элемента из ниобата лития. Известные бета−вольтаические генераторы переменного напряжения состоят из пьезоэлектрического кантилевера и источника −электронов. Причем кантилевер представляет собой упругий элемент, например из кремния, на который приклеен пьезоэлемент из пьезокерамики PZT. Предложено заменить структуру из кремниевой балки с пьезоэлементом на однородный кантилевер, представляющий собой тонкую пластину из бидоменного монокристалла ниобата лития. За счет этого одновременно увеличивается эффективность преобразования механических колебаний в электрическую энергию и добротность системы, стабильность рабочих параметров, а также существенно увеличивается (на несколько сот градусов) температурный диапазон функционирования. Подробно рассмотрено решение основной задачи — формирование бидоменной структуры в тонкой пластине ниобата лития. Предложен метод высокотемпературного отжига образца в неоднородном электрическом поле. Продемонстрирована возможность прогнозирования доменной структуры на основе разработанной модели. Получены образцы с глубиной залегания междоменной границы 120—150 мкм. При этом показано, что четкость границы зависит от разности потенциалов между полосчатыми электродами технологической ячейки и внешним электродом. Метод является эффективным для создания бидоменной структуры в пластине толщиной примерно до 300 мкм.</p></abstract><trans-abstract xml:lang="en"><p>This article discusses the possibility of increasing the efficiency of betavoltaic generators by using lithium niobate single−crystal bimorph as the piezoelectric transducer element. Existing betavoltaic alternating voltage generators consist of a piezoelectric cantilever and a  electron source, wherein the cantilever is a resilient member, for example silicon, to which a PZT ceramics piezoelectric element is connected. In this study we suggest changing the structure of the silicon cantilever with a piezoelectric element for a uniform cantilever which is a thin plate of bidomain lithium niobate single crystal. This increases the efficiency of converting mechanical vibrations to electrical power, Q of the system, and the stability of the working parameters, and furthermore significantly increases — up to several hundred degrees — the operation temperature range. We have considered in details the solution of the main task —formation of a bidomain structure in a thin lithium niobate plate. A method of the sample high−temperature annealing in a nonuniform electric field is proposed. The possibility of domain structure prediction on the basis of the developed model is shown. Samples with a domain boundary depth of 120—150 microns have been obtained, and we have shown that the clarity of the boundary depends on the voltage between the working cell strip electrodes and the external electrode. The method is effective for bidomain structure formation in plates of about 300 microns in thickness.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>ниобат лития</kwd><kwd>сегнетоэлектрик</kwd><kwd>доменная структура</kwd><kwd>пьезоэлектрический преобразователь</kwd><kwd>бета−вольтаический генератор</kwd></kwd-group><kwd-group xml:lang="en"><kwd>: lithium niobate</kwd><kwd>ferroelectric</kwd><kwd>domain structure</kwd><kwd>ferroelectric transducer</kwd><kwd>betavoltaic generator</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Министерство образования и науки Российской Федерации (ID проекта RFMEFI57815X0102).</funding-statement><funding-statement xml:lang="en">Ministry of Education and Science of the Russian Federation (Project ID RFMEFI57815X0102)</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Yurchuk, S. Yu. 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