mateltechИзвестия высших учебных заведений. Материалы электронной техникиIzvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering1609-35772413-6387MISIS10.17073/1609-3577-2016-2-75-86mateltech-266Research ArticleСТАТЬИARTICLESСтруктурные, электрические и люминесцентные характеристики ультрафиолетовых светодиодов, выращенных методом хлорид–гидридной эпитаксииStructural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxyПоляковА. Я.PolyakovA. Y.YunJin−HyeonYunJin-HyeonУсиковА. С.UsikovA. S.ЯкимовЕ. Б.YakimovE. B.СмирновН. Б.SmirnovN. B.ЩербачевК. Д.ShcherbachevK. D.HelavaН.HelavaH.MakarovY. N.MakarovY. N.КуринС. Ю.KurinS. Y.ШмидтН. М.ShmidtN. M.РабиновичО. И.RabinovichO. I.ДиденкоС. И.DidenkoS. I.ТарелкинС. А.TarelkinS. A.ПапченкоБ. П.PapchenkoB. P.LeeIn−HwanLeeIn-Hwan

Jeonju

Национальный университет Чонбук; Национальный исследовательский технологический университет «МИСиСРоссияSchool of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University; National University of Science and Technology MISiSRussian FederationНациональный университет ЧонбукЮжная КореяSchool of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National UniversityKorea, Republic ofNitride Crystals, Inc.; Санкт−Петербургский национальный исследовательский университет информационных технологий, механики и оптики (Университет ИТМО)РоссияNitride Crystals, Inc.; ITMO University (Saint Petersburg National Research University of Information Technologies, Mechanics and Optics)Russian FederationНациональный исследовательский технологический университет «МИСиС; Институт проблем технологии микроэлектроники и особочистых материалов РАНРоссияNational University of Science and Technology MISiS; nstitute of Microelectronics Technology and High Purity Materials, Russian Academy of ScienceRussian FederationНациональный исследовательский технологический университет «МИСиС; АО «Гиредмет»РоссияNational University of Science and Technology MISiS; Federal state research and design institute of rare metal industry (JSC «Giredmet»)Russian FederationНациональный исследовательский технологический университет «МИСиСРоссияNational University of Science and Technology MISiS,Russian FederationNitride Crystals, Inc.Соединённые Штаты АмерикиNitride Crystals, Inc.United StatesОАО «Нитридные кристаллы»РоссияNitride Crystals Ltd.Russian FederationФизико−технический институт имени А. Ф. Иоффе РАНРоссияIoffe Physical–Technical Institute of the Russian Academy of SciencesRussian FederationНациональный исследовательский технологический университет «МИСиСРоссияNational University of Science and Technology MISiSRussian FederationНациональный исследовательский технологический университет «МИСиС;РоссияNational University of Science and Technology MISiS; Technological Institute for Superhard and Novel Carbon MaterialsRussian FederationСанкт−Петербургский национальный исследовательский университет информационных технологий, механики и оптики (Университет ИТМО)РоссияITMO University (Saint Petersburg National Research University of Information Technologies, Mechanics and Optics)Russian FederationНациональный университет ЧонбукЮжная КореяSchool of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National UniversitKorea, Republic of2016300620161927586Copyright © Поляков А.Я., Yun J., Усиков А.С., Якимов Е.Б., Смирнов Н.Б., Щербачев К.Д., Helava Н., Makarov Y.N., Курин С.Ю., Шмидт Н.М., Рабинович О.И., Диденко С.И., Тарелкин С.А., Папченко Б.П., Lee I., 20162016Поляков А.Я., Yun J., Усиков А.С., Якимов Е.Б., Смирнов Н.Б., Щербачев К.Д., Helava Н., Makarov Y.N., Курин С.Ю., Шмидт Н.М., Рабинович О.И., Диденко С.И., Тарелкин С.А., Папченко Б.П., Lee I.Polyakov A.Y., Yun J., Usikov A.S., Yakimov E.B., Smirnov N.B., Shcherbachev K.D., Helava H., Makarov Y.N., Kurin S.Y., Shmidt N.M., Rabinovich O.I., Didenko S.I., Tarelkin S.A., Papchenko B.P., Lee I.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://met.misis.ru/jour/article/view/266

Изучены электрические и люминесцентные характеристики светодиодных структур (СД), излучающих в ближней ультрафиолетовой (УФ) области и выращенных методом хлорид−гидридной эпитаксии. Обнаружены различия в характеристиках УФ СД, выращенных в номинально одинаковых условиях, которые приписывают различиям в структурном совершенстве (плотности дислокаций и дислокационных агломератов) в активных слоях GaN, разнице в степени релаксации напряжений, достигаемой с помощью сверхрешеток AlGaN/AlGaN, а также существованию каналов токовых утечек в слоях AlGaN, ограничивающих заряд в двойной гетероструктуре. 

Electrical and luminescent properties of near−UV light emitting diode structures (LEDs) prepared by hydride vapor phase epitaxy (HVPE) were studied. Variations in photoluminescence and electroluminescence efficiency observed for LEDs grown under nominally similar conditions could be attributed to the difference in the structural quality (dislocation density, density of dislocations agglomerates) of the GaN active layers, to the difference in strain relaxation achieved by growth of AlGaN/AlGaN superlattice and to the presence of current leakage channels in current confining AlGaN layers of the double heterostructure.

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The authors declare that there are no conflicts of interest present.