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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mateltech</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений. Материалы электронной техники</journal-title><trans-title-group xml:lang="en"><trans-title>Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1609-3577</issn><issn pub-type="epub">2413-6387</issn><publisher><publisher-name>MISIS</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17073/1609-3577-2019-1-5-17</article-id><article-id custom-type="elpub" pub-id-type="custom">mateltech-286</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>СТАТЬИ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>ARTICLES</subject></subj-group></article-categories><title-group><article-title>Формирование стабильных индуцированных доменов в области заряженной междоменной границы в ниобате лития с помощью зондовой микроскопии</article-title><trans-title-group xml:lang="en"><trans-title>Formation of stable induced domains at charged domain boundary in lithium niobate using scanning probe microscopy</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-7185-8715</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Кислюк</surname><given-names>А. М.</given-names></name><name name-style="western" xml:lang="en"><surname>Kislyuk</surname><given-names>A. M.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ленинский просп., д. 4, Москва, 119049, Россия</p><p>Кислюк Александр Михайлович — инженер 1-й категории</p></bio><bio xml:lang="en"><p>Alexander M. Kislyuk: 1st Category Engineer</p><p>4 Leninsky Prospekt, Moscow 119049, Russia</p></bio><email xlink:type="simple">akislyuk94@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-1641-1731</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ильина</surname><given-names>Т. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Ilina</surname><given-names>T. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ленинский просп., д. 4, Москва, 119049, Россия</p><p>Ильина Татьяна Сергеевна — инженер</p></bio><bio xml:lang="en"><p>Tatiana S. Ilina: Engineer</p><p>4 Leninsky Prospekt, Moscow 119049, Russia</p></bio><email xlink:type="simple">iltany94@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-6569-466X</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Кубасов</surname><given-names>И. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Kubasov</surname><given-names>I. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ленинский просп., д. 4, Москва, 119049, Россия</p><p>Кубасов Илья Викторович — ассистент</p></bio><bio xml:lang="en"><p>Ilya V. Kubasov: Assistant</p><p>4 Leninsky Prospekt, Moscow 119049, Russia</p></bio><email xlink:type="simple">kubasov.ilya@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-1047-3007</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Киселев</surname><given-names>Д. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Kiselev</surname><given-names>D. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ленинский просп., д. 4, Москва, 119049, Россия</p><p>Киселев Дмитрий Александрович — канд. физ.-мат. наук, старший научный сотрудник</p></bio><bio xml:lang="en"><p>Dmitrii A. Kiselev: Cand. Sci. (Phys.-Math.), Senior Researcher</p><p>4 Leninsky Prospekt, Moscow 119049, Russia</p></bio><email xlink:type="simple">dm.kiselev@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Темиров</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Temirov</surname><given-names>A. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ленинский просп., д. 4, Москва, 119049, Россия</p><p>Темиров Александр Анатольевич — ассистент</p></bio><bio xml:lang="en"><p>Alexander A. Temirov: Assistant</p><p>4 Leninsky Prospekt, Moscow 119049, Russia</p></bio><email xlink:type="simple">temirov.alex@yandex.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-1090-3441</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Турутин</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Turutin</surname><given-names>A. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ленинский просп., д. 4, Москва, 119049, Россия</p><p>Турутин Андрей Владимирович — инженер 1-й категории</p></bio><bio xml:lang="en"><p>Andrey V. Turutin: 1st Category Engineer</p><p>4 Leninsky Prospekt, Moscow 119049, Russia</p></bio><email xlink:type="simple">aturutin92@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-9531-6072</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Малинкович</surname><given-names>М. Д.</given-names></name><name name-style="western" xml:lang="en"><surname>Malinkovich</surname><given-names>M. D.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ленинский просп., д. 4, Москва, 119049, Россия</p><p>Малинкович Михаил Давыдович — канд. физ.-мат. наук, доцент</p></bio><bio xml:lang="en"><p>Mikhail D. Malinkovich: Cand. Sci. (Phys.-Math.), Associate Professor</p><p>4 Leninsky Prospekt, Moscow 119049, Russia</p></bio><email xlink:type="simple">malinkovich@yandex.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Полисан</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Polisan</surname><given-names>A. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ленинский просп., д. 4, Москва, 119049, Россия</p><p>Полисан Андрей Андреевич — профессор каф. МПиД</p></bio><bio xml:lang="en"><p>Andrey A. Polisan: Professor</p><p>4 Leninsky Prospekt, Moscow 119049, Russia</p></bio><email xlink:type="simple">apolisan@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-1970-9867</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Пархоменко</surname><given-names>Ю. Н.</given-names></name><name name-style="western" xml:lang="en"><surname>Parkhomenko</surname><given-names>Yu. N.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ленинский просп., д. 4, Москва, 119049, Россия;</p><p>АО «Гиредмет», Электродная ул., д. 2 стр. 1, Москва, 111524, Россия</p><p>Пархоменко Юрий Николаевич — доктор физ.-мат. наук, профессор, заведующий кафедрой МПиД</p><p> </p></bio><bio xml:lang="en"><p>Yuri N. Parkhomenko: Dr. Sci. (Phys.-Math.), Professor, Head of the Department</p><p>4 Leninsky Prospekt, Moscow 119049, Russia</p><p>2 Elektrodnaya Str., Moscow 111524, Russia</p></bio><email xlink:type="simple">parkh@rambler.ru</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Национальный исследовательский технологический университет «МИСиС»</institution></aff><aff xml:lang="en"><institution>National University of Science and Technology MISiS</institution></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Национальный исследовательский технологический университет «МИСиС»;&#13;
АО «Гиредмет»</institution></aff><aff xml:lang="en"><institution>National University of Science and Technology MISiS&#13;
JSC «Giredmet»</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2019</year></pub-date><pub-date pub-type="epub"><day>20</day><month>06</month><year>2019</year></pub-date><volume>22</volume><issue>1</issue><fpage>5</fpage><lpage>17</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Кислюк А.М., Ильина Т.С., Кубасов И.В., Киселев Д.А., Темиров А.А., Турутин А.В., Малинкович М.Д., Полисан А.А., Пархоменко Ю.Н., 2019</copyright-statement><copyright-year>2019</copyright-year><copyright-holder xml:lang="ru">Кислюк А.М., Ильина Т.С., Кубасов И.В., Киселев Д.А., Темиров А.А., Турутин А.В., Малинкович М.Д., Полисан А.А., Пархоменко Ю.Н.</copyright-holder><copyright-holder xml:lang="en">Kislyuk A.M., Ilina T.S., Kubasov I.V., Kiselev D.A., Temirov A.A., Turutin A.A., Malinkovich M.D., Polisan A.A., Parkhomenko Y.N.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://met.misis.ru/jour/article/view/286">https://met.misis.ru/jour/article/view/286</self-uri><abstract><p>Сегнетоэлектрические кристаллы ниобата лития (LiNbO3) c искусственно сформированной доменной структурой находят широкое применение в оптических системах генерации кратных гармоник лазерного излучения, акустооптике, прецизионных актюаторах, датчиках вибрации и магнитного поля, в том числе предназначенных для применения при повышенных температурах, в перспективе — в запоминающих устройствах ЭВМ. Исследовано влияние заряженной междоменной границы на формирование индуцированных доменных структур в конгруэнтных кристаллах ниобата лития (LiNbO3) неполярного x-среза. Методами диффузионного отжига на воздухе вблизи температуры Кюри и инфракрасного отжига в бескислородной среде в образцах были сформированы би- и полидоменные сегнетоэлектрические структуры, содержащие заряженные доменные границы типа «голова-к-голове» и «хвост-к-хвосту». В режиме Кельвин-моды атомно-силового микроскопа (АСМ) исследован поверхностный потенциал в окрестности заряженной междоменной границы. Исследованы приповерхностные клиновидные индуцированные микродомены, сформированные в области заряженной междоменной границы и вдали от нее путем приложения электрического потенциала на кантилевер АСМ, находящийся в контакте с поверхностью кристалла. Продемонстрирована зависимость морфологии индуцированной доменной структуры от электропроводности кристаллов. Показано экранирующее действие заряженной междоменной границы типа «голова-к-голове» на форму и размер домена, индуцированного в непосредственной близости к доменной стенке. Описано разбиение одиночных клиновидных доменов, образующихся при локальной переполяризации кристаллов восстановленного ниобата лития с помощью кантилевера АСМ, на семейства микродоменов, имеющих форму сонаправленных лучей, выходящих из общего центра зарождения. Обнаружено влияние заряженной междоменной границы на топографию образцов, заключающееся в возникновении при восстановительном отжиге протяженного углубления, совпадающего с линией заряженной границы.</p></abstract><trans-abstract xml:lang="en"><p>The influence of a charged domain wall on the formation of the induced domain structures in congruent x-cut lithium niobate crystals (LiNbO3) is studied. By diffusion annealing in air ambient near Curie temperature, as well as infrared annealing in oxygen-free ambient bi- and multidomain ferroelectric structures containing charged domain walls «head-to-head» and «tail-to-tail» were formed. By Kelvin probe mode of atomic force microscopy (AFM) surface potential near the charged domain walls was investigated. We studied surface needle-shaped induced microdomains which were formed in a vicinity of the domain boundary and far from it by applying of voltage to the cantilever being in a contact with the surface of the sample. Dependence of morphology of the induced domain structure on the crystal’s electric conductivity was demonstrated. Screening effect of charged «head-to-head» domain wall on a shape and size of the domain, that was induced near the boundary is shown. We described partition of the single needle-shaped domains formed by AFM cantilever to several microdomains having a shape of several beams based in a common nucleation point. We found an influence of the charged domain wall on the topography of the samples, which consisted in the appearance of a long groove corresponding to the domain boundary after the reducing annealing.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>ниобат лития</kwd><kwd>бидоменный кристалл</kwd><kwd>заряженная междоменная граница</kwd><kwd>диффузионный отжиг</kwd><kwd>силовая микроскопия пьезоотклика</kwd><kwd>поверхностный потенциал</kwd></kwd-group><kwd-group xml:lang="en"><kwd>lithium niobate</kwd><kwd>bidomain crystal</kwd><kwd>charged domain wall</kwd><kwd>diffusion annealing</kwd><kwd>piezoresponse force microscopy</kwd><kwd>surface potential</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Исследование выполнено при финансовой поддержке РФФИ в рамках научного проекта № 18-32-00941.  Исследования методами атомно-силовой микроскопии выполнены при финансовой поддержке Министерства науки и высшего образования РФ на оборудовании ЦКП «Материаловедение и металлургия» НИТУ «МИСиС» в рамках Государственного задания (проект 11.9706.2017/7.8).</funding-statement><funding-statement xml:lang="en">The study was performed with financial support from the Russian Foundation for Basic Research, Project No. 18-32-00941. Atomic force microscopy studies were carried out with financial support from the Ministry of Education and Science of the Russian Federation on premises of the Joint Use Center for Materials Science and Metallurgy of NUST MISiS within State Assignment (basic research, project No. 0718-2020-0031 «New magnetoelectric composite materials based on oxide ferroelectrics having an ordered domain structure: production and properties»).</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Lengyel K., Péter Á., Kovács L., Corradi G., Pálfalvi L., Hebling J., Unferdorben M., Dravecz G., Hajdara I., Szaller Zs., Polgár K. Growth, defect structure, and THz application of stoichiometric lithium niobate // Appl. Phys. Rev. 2015. V. 2, N 4. P. 040601. 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