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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mateltech</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений. Материалы электронной техники</journal-title><trans-title-group xml:lang="en"><trans-title>Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1609-3577</issn><issn pub-type="epub">2413-6387</issn><publisher><publisher-name>MISIS</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">mateltech-299</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Редакционная статья</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>EDITORIAL</subject></subj-group></article-categories><title-group><article-title>«Кремний–2016»: ученые обсудили будущее электроники</article-title><trans-title-group xml:lang="en"><trans-title>Silicon – 2016: Scientists discussed the future of electronics</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Красин</surname><given-names>П.</given-names></name><name name-style="western" xml:lang="en"><surname>Krasin</surname><given-names>P.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Павел Красин.</p></bio><bio xml:lang="en"><p>Pavel Krasin.</p></bio></contrib></contrib-group><pub-date pub-type="collection"><year>2016</year></pub-date><pub-date pub-type="epub"><day>12</day><month>12</month><year>2016</year></pub-date><volume>19</volume><issue>4</issue><fpage>285</fpage><lpage>286</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Красин П., 2016</copyright-statement><copyright-year>2016</copyright-year><copyright-holder xml:lang="ru">Красин П.</copyright-holder><copyright-holder xml:lang="en">Krasin P.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://met.misis.ru/jour/article/view/299">https://met.misis.ru/jour/article/view/299</self-uri><abstract><p>.</p></abstract><trans-abstract xml:lang="en"><p>.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>кремний</kwd><kwd>электроника</kwd></kwd-group><kwd-group xml:lang="en"><kwd>silicon</kwd><kwd>electronics</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
