mateltechИзвестия высших учебных заведений. Материалы электронной техникиIzvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering1609-35772413-6387MISIS10.17073/1609-3577-2018-1-18-25mateltech-320Research ArticleМатериаловедение и технология. ДиэлектрикиMATERIALS SCIENCE AND TECHNOLOGY. DIELECTRICSОптические характеристики монокристаллического материала Gd3Al2Ga3O12 : CeOptical characteristics of Gd3Al2Ga3O12 : Ce single-crystal materialКозловаН. С.KozlovaN. S.

Козлова Нина Семеновна — кандидат физико−матемвтических наук, заведующая лабораторией

Ленинский просп., д. 4, Москва, 119049

Nina S. Kozlova: Cand. Sci. (Phys.-Math.), Head of Laboratory 

4 Leninsky Prospekt, Moscow 119049

kozlova_nina@mail.ruБузановО. А.BuzanovO. A.

Бузанов Олег Алексеевич — кандидат технических наук, главный научный сотрудник

ул. Буженинова, д. 16, стр.1, Москва, 107023

Oleg A. Buzanov: Cand. Sci. (Eng.), Leading Researcher 

16 Buzheninova Str., Moscow 107023

 

buzanov@newpiezo.comКасимоваВ. М.KasimovaV. M.

Касимова Валентина Маратовна — студент магистратуры 

Ленинский просп., д. 4, Москва, 119049

Valentina M. Kasimova: Master Student 

4 Leninsky Prospekt, Moscow 119049

kasimovavalya@mail.ruКозловаА. П.KozlovaA. P.

Козлова Анна Петровна — ведущий инженер

Ленинский просп., д. 4, Москва, 119049

Anna P. Kozlova: Leading Engineer 

4 Leninsky Prospekt, Moscow 119049

kozlova.ap@misis.ruЗабелинаЕ. В.ZabelinaE. V.

Забелина Евгения Викторовна — ведущий инженер

Ленинский просп., д. 4, Москва, 119049

Evgeniya V. Zabelina: Leading Engineer 

4 Leninsky Prospekt, Moscow 119049

zabelina.ev@misis.ruНациональный исследовательский технологический университет «МИСиС»РоссияNational University of Science and Technology MISiSRussian FederationОАО «ФомосМатериалс»РоссияJSC FomosMaterialsRussian Federation2018220620192111825Copyright © Козлова Н.С., Бузанов О.А., Касимова В.М., Козлова А.П., Забелина Е.В., 20192019Козлова Н.С., Бузанов О.А., Касимова В.М., Козлова А.П., Забелина Е.В.Kozlova N.S., Buzanov O.A., Kasimova V.M., Kozlova A.P., Zabelina E.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://met.misis.ru/jour/article/view/320

В настоящее время появляются новые технологии детектирования высокоэнергетических излучений, для которых применяются материалы, легированные ионами редкоземельных элементов. Существует большая потребность в разработке новых неорганических сцинтилляторов для медицинского применения, в частности для детектирования рентгеновского и гамма-излучений. В этом случае сцинтилляционные материалы должны отвечать основным требованиям: высокое оптическое качество, высокое значение световыхода, быстрое время реагирования и др. К таким материалам относится сцинтилляционный кристалл Gd3Al2Ga3O12 : Ce (GAGG : Ce). На сегодняшний день оптические характеристики GAGG : Ce исследованы недостаточно. В связи с этим методом оптической спектроскопии в диапазоне длин волн 200—750 нм измерены спектральные зависимости пропускания и отражения таких кристаллов. Для кристаллов GAGG : Ce определены значения показателей поглощения и преломления, коэффициенты экстинкции, проведена оценка значения оптической ширины запрещенной зоны. Для определения значений показателей преломления использованы два спектрофотометрических метода: по измеренным углам Брюстера и по коэффициенту отражения при малом угле падения света, близком к нормальному. На основании полученных результатов построены дисперсионные зависимости показателей преломления.

 

Nowadays new high-energy emission detection technologies with use of materials doped with rare-earth activators appear. There is still a great need for the development of new inorganic scintillators for medical application in particular detection of X-rays and -grays. In this case, the scintillation materials must meet basic requirements: high optical quality, high light output, fast response time and et al. One of these materials is the scintillation crystal Gd3Al2Ga3O12 : Ce (GAGG : Ce) investigated in this work. Analysis of the literature data showed that the optical characteristics of Gd3Al2Ga3O12 : Ce have not been studied enough. Hence the GAGG : Ce optical parameters (spectral transmission and reflection) were measured by optical spectroscopy in the wavelength range 200—750 nm. We calculated values of the absorption and extinction coefficients, refractive indices and the optical band gap of the Gd3Al2Ga3O12 : Ce. We used two spectrophotometric methods to determine the values of the refractive index: Brewster angles (jB) and the reflection coefficients at a small incidence angle of light close to normal (R0). The obtained results were used to build dispersion dependences graphs of the refractive indices.

Gd3Al2Ga3O12:Ceсцинтилляционный монокристаллспектрофотометрия пропусканияпоказатель поглощенияоптическая ширина запрещенной зоныспектрофотометрия отраженияпоказатель преломлениякоэффициент экстинкциидисперсияGd3Al2Ga3O12 : Cescintillation single-crystaltransmission spectrophotometryabsorption coefficientoptical band gapreflection specrtophotometryrefractive indexextinction coefficientdispersionРабота выполнена при финансовой поддержке Министерства образования и науки Российской Федерации в рамках Государственного задания вузу № 3.2794.2017/ПЧ, № 11.5583.2017/ИТР (11.5583.2017/7.8), № 11.6181.2017/ИТР (11.6181.2017/7.8).The work was accomplished with financial support from the Ministry of Education and Science of the Russian Federation within State Educational Institution Assignments Nos. 3.2794.2017/PCh, 11.5583.2017/ITR (11.5583.2017/7.8), 11.6181.2017/ITR (11.6181.2017/7.8). The experiments were carried out at the InterUniversity Test Laboratory for semiconductors and dielectrics «Single Crystals and Stock on their Base» of the National University of Science and Technology MISiS.ReferencesSomlai-Schweiger I., Schneider F. R., Ziegler S. I. Performance analysis of digital silicon photomultipliers for PET // J. Instrumentation. 2015. V. 10. P. 05005. DOI: 10.1088/1748-0221/10/05/P05005Somlai-Schweiger I., Schneider F. R., Ziegler S. I. Performance analysis of digital silicon photomultipliers for PET. J. Instrumentation, 2015, vol. 10, p. 05005. DOI: 10.1088/1748-0221/10/05/P05005Yeom J. Y., Yamamoto S., Derenzo S. E., Spanoudaki V. C., Kamada K., Endo T., Levin C. S. First performance results of Ce: GAGG scintillation crystals with silicon photomultipliers // IEEE Transactions on Nuclear Science. 2013. V. 60, N 2. P. 988—992. DOI: 10.1109/TNS.2012.2233497Yeom J. Y., Yamamoto S., Derenzo S. E., Spanoudaki V. C., Kamada K., Endo T., Levin C. S. First performance results of Ce: GAGG scintillation crystals with silicon photomultipliers. IEEE Transactions on Nuclear Science, 2013, vol. 60, no. 2, pp. 988—992. DOI: 10.1109/TNS.2012.2233497Bok J., Lalinský O., Hanuљ M., Onderišinová Z., Kelar J., Kučera M. GAGG: Ce single crystalline films: New perspective scintillators for electron detection in SEM // Ultramicroscopy. 2016. V. 163. P. 1—5. DOI: 10.1016/j.ultramic.2016.01.003Bok J., Lalinský O., Hanuš M., Onderišinová Z., Kelar J., Kučera M. GAGG: Ce single crystalline films: New perspective scintillators for electron detection in SEM. Ultramicroscopy, 2016, vol. 163, pp. 1—5. DOI: 10.1016/j.ultramic.2016.01.003Lecoq P. Development of new scintillators for medical applications // Nuclear Instrum. and Meth. in Phys. Res. A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2016. V. 809. P. 130—139. DOI: 10.1016/j.nima.2015.08.041Lecoq P. Development of new scintillators for medical applications. Nuclear Instrum. and Meth. in Phys. Res. A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2016, vol. 809, pp. 130—139. DOI: 10.1016/j.nima.2015.08.041Seitz B., Stewart A. G., O’Neill K., Wall L., Jackson C. Performance evaluation of novel SiPM for medical imaging applications // IEEE Nuclear Sci. Symp. and Medical Imaging Conf. (NSS/MIC). Seoul (South Korea), 2013. P. 1—4. DOI: 10.1109/NSSMIC.2013.6829685Seitz B., Stewart A.G., O’Neill K., Wall L., Jackson C. Performance evaluation of novel SiPM for medical imaging applications. IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC). Seoul (South Korea), 2013, pp. 1—4. DOI: 10.1109/NSSMIC.2013.6829685Kamada K., Yanagida T., Endo T., Tsutumi K., Usuki Y., Nikl M., Fujimoto Y., Yoshikawa A. 2-inch size single crystal growth and scintillation properties of new scintillator; Ce : Gd3Al2Ga3O12 // IEEE Nuclear Sci. Symp. Conf. Rec. Valencia (Spain), 2011. P. 1927— 1929. DOI: 10.1109/NSSMIC.2011.6154387Kamada K., Yanagida T., Endo T., Tsutumi K., Usuki Y., Nikl M., Fujimoto Y., Yoshikawa A. 2-inch size single crystal growth and scintillation properties of new scintillator; Ce : Gd3Al2Ga3O12. IEEE Nuclear Sci. Symp. Conf. Rec. Valencia (Spain), 2011, pp. 1927—1929. DOI: 10.1109/NSSMIC.2011.6154387Kanai T., Satoh M., Miura I. Characteristics of a nonstoichiometric Gd3+∆(Al,Ga)5-∆O12:Ce garnet scintillator // J. Amer. Ceramic Soc. 2008. V. 91, Iss. 2. P. 456—462. DOI: 10.1111/j.15512916.2007.02123.xKanai T., Satoh M., Miura I. Characteristics of a nonstoichiometric Gd3+δ(Al,Ga)5−δO12:Ce :Ce garnet scintillator. J. Amer. Ceramic Soc., 2008, vol. 91, no. 2, pp. 456—462. DOI: 10.1111/j.15512916.2007.02123.xTyagi M., Meng F., Koschan M., Donnald S. B., Rothfuss H., Melcher C. L. Effect of codoping on scintillation and optical properties of a Cedoped Gd3Ga3Al2O12 scintillator // J. Phys. D: Appl. Phys. 2013. V. 46, N 47. P. 475302. DOI: 10.1088/0022-3727/46/47/475302Tyagi M., Meng F., Koschan M., Donnald S. B., Rothfuss H., Melcher C. L. Effect of codoping on scintillation and optical properties of a Ce-doped Gd3Ga3Al2O12 scintillator. J. Phys. D: Appl. Phys., 2013, vol. 46, no. 47, p. 475302. DOI: 10.1088/0022-3727/46/47/475302Kozlova N. S., Busanov O. A., Zabelina E. V., Kozlova A. P., Kasimova V. M. Optical properties and refractive indices of Gd3Al2Ga3O12 : Ce3+ crystals // Crystallogr. Rep. 2016. V. 61, Iss. 3. P. 474—478. DOI: 10.1134/S1063774516030160Kozlova N. S., Busanov O. A., Zabelina E. V., Kozlova A. P., Kasimova V. M. Optical properties and refractive indices of Gd3Al2Ga3O12 : Ce3+ crystals. Crystallogr. Rep., 2016, vol. 61, no. 3, pp. 474—478. DOI: 10.1134/S1063774516030160Шаскольская М. П. Кристаллография. М.: Высшая шк., 1984. 376 с.Shaskol’skaya M.P. Kristallografiya [Crystallography]. Moscow: Vysshaya shkola, 1984, 376 p. (In Russ.)Shannon R. D. Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides // Acta Cryst. A. 1976. V. 32, Iss. 5. P. 751—767. DOI: 10.1107/S0567739476001551Shannon R. D. Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides. Acta Cryst. A, 1976, vol. 32, no. 5, pp. 751—767. DOI: 10.1107/S0567739476001551Wu Y., Luo Z., Jiang H. Meng F., Koschan M., Melcher C. L. Single crystal and optical ceramic multicomponent garnet scintillators: A comparative study // Nuclear Instrum. and Meth. in Phys. Res. A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2015. V. 780. P. 45—50. DOI: 10.1016/j.nima.2015.01.057Wu Y., Luo Z., Jiang H. Meng F., Koschan M., Melcher C. L. Single crystal and optical ceramic multicomponent garnet scintillators: A comparative study. Nuclear Instrum. and Meth. in Phys. Res. A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2015, vol. 780, pp. 45—50. DOI: 10.1016/j.nima.2015.01.057Asami K., Ueda J., Tanabe S. Trap depth and color variation of Ce3+ -Cr3+ co-doped Gd3(Al, Ga)5O12 garnet persistent phosphors // Optical Mater. 2016. V. 62. P. 171—175. DOI: 10.1016/j. optmat.2016.09.052Asami K., Ueda J., Tanabe S. Trap depth and color variation of Ce3+-Cr3+ co-doped Gd3(Al, Ga)5O12 garnet persistent phosphors. Optical Mater., 2016, vol. 62, pp. 171—175. DOI: 10.1016/j.optmat.2016.09.052Wu Y., Nikl M., Jary V., Ren G. Thermally induced ionization of 5d1 state of Ce3+ ion in Gd3Ga3Al2O12 host // Chemical Phys. Lett. 2013. V. 574. P. 56—60. DOI: 10.1016/j.cplett.2013.04.068Wu Y., Nikl M., Jary V., Ren G. Thermally induced ionization of 5d1 state of Ce3+ ion in Gd3Ga3Al2O12 host. Chemical Phys. Lett., 2013, vol. 574, pp. 56—60. DOI: 10.1016/j.cplett.2013.04.068Wu Y., Meng F., Li Q., Koschan M., Melcher C. L. Role of Ce4+ in the scintillation mechanism of codoped Gd3Ga3Al2O12:Ce // Phys. Rev. Applied. 2014. V. 2, Iss. 4. P. 044009. DOI: 10.1103/PhysRevApplied.2.044009Wu Y., Meng F., Li Q., Koschan M., Melcher C. L. Role of Ce4+ in the scintillation mechanism of codoped Gd3Ga3Al2O12:Ce. Phys. Rev. Appl., 2014, V. 2, no. 4. P. 044009. DOI: 10.1103/PhysRevApplied.2.044009Kitaura M., Sato A., Kamada K., Ohnishi A., Sasaki M. Phosphorescence of Cedoped Gd3Al2Ga3O12 crystals studied using luminescence spectroscopy // J. Appl. Phys. 2014. V. 115, Iss. 8. P. 083517. DOI: 10.1063/1.4867315Kitaura M., Sato A., Kamada K., Ohnishi A., Sasaki M. Phosphorescence of Ce-doped Gd3Al2Ga3O12 crystals studied using luminescence spectroscopy. J. Appl. Phys., 2014, vol. 115, no. 8, p. 083517. DOI: 10.1063/1.4867315Касимова В. М, Бузанов О. А., Козлова Н. С., Козлова А. П. Сцинтилляционный материал Gd3Al2Ga3O12 : Се // Фундаментальные проблемы радиоэлектронного приборостроения. 2015. Т. 15, № 2. С. 79—82.Kasimova V. M., Buzanov O. A., Kozlova N. S., Kozlova A. P. Scintillation material Gd3Al2Ga3O12:Се. Fundamental’nye problemy radioelektronnogo priborostroeniya = Fundamental Problems of Radio Electronic Instrument Making, 2015, vol. 15, no. 2, pp. 79—82. (In Russ.)Kobayashi M., Tamagawa Y., Tomita S., Yamamoto A., Ogawa I., Usuki Y. Significantly different pulse shapes for γ− and α−rays in d3Al2Ga3O12:Ce3+ scintillating crystals // Nucl. Instrum. and Meth. in Phys. Res. A: celerators, Spectrometers, Detectors and Associated Equipment. 2012. V. 694. P. 91-94. DOI: 10.1016/j.nima.2012.07.055Kobayashi M., Tamagawa Y., Tomita S., Yamamoto A., Ogawa I., Usuki Y. Significantly different pulse shapes for γ− and α−rays in Gd3Al2Ga3O12:Ce3+ scintillating crystals. Nucl. Instrum. and Meth. in Phys. Res. A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2012, vol. 694, pp. 91—94. DOI: 10.1016/j.nima.2012.07.055Tamagawa Y., Inukai Y., Ogawa I., Kobayashi M. Alpha-gamma pulse-shape discrimination in Gd3Al2Ga3O12 (GAGG) : Ce3+ crystal scintillator using shape indicator // Nucl. Instrum. and Meth. in Phys. Res. A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2015. V. 795. P. 192—195. DOI: 10.1016/j.nima.2015.05.052Tamagawa Y., Inukai Y., Ogawa I., Kobayashi M. Alpha-gamma pulse-shape discrimination in Gd3Al2Ga3O12 (GAGG) : Ce3+ crystal scintillator using shape indicator. Nucl. Instrum. and Meth. in Phys. Res. A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2015, vol. 795, pp. 192—195. DOI: 10.1016/j.nima.2015.05.052Kamada K., Shoji Y., Kochurikhin V. V., Okumura S., Yamamoto S., Nagura A., Yeom J. Y., Kurosawa S., Yokota Y., Ohashi Y., Nikl M., Yoshikawa A. Growth and scintillation properties of 3 in. diameter Ce doped Gd3Ga3Al2O12 scintillation single crystal // J. Cryst. Growth. 2016. V. 452. P. 81—84. DOI: 10.1016/j.jcrysgro.2016.04.037Kamada K., Shoji Y., Kochurikhin V. V., Okumura S., Yamamoto S., Nagura A., Yeom J. Y., Kurosawa S., Yokota Y., Ohashi Y., Nikl M., Yoshikawa A. Growth and scintillation properties of 3 in. diameter Ce doped Gd3Ga3Al2O12 scintillation single crystal. J. Cryst. Growth, 2016, vol. 452, pp. 81—84. DOI: 10.1016/j.jcrysgro.2016.04.037Kozlova N. S., Kozlova A. P., Goreeva Zh. A. Spectrophotometric methods and their capabilities to study material optical parameters // IEEE 2nd Internat. Ural Conf. on Measurements (UralCon). Chelyabinsk (Russia), 2017. P. 281—288. DOI: 10.1109/URALCON.2017.8120724Kozlova N. S., Kozlova A. P., Goreeva Zh. A. Spectrophotometric methods and their capabilities to study material optical parameters. IEEE 2nd Internat. Ural Conf. on Measurements (UralCon). Chelyabinsk (Russia), 2017, pp. 281—288. DOI: 10.1109/URALCON.2017.8120724Palik E. D. Handbook of optical constants of solids. N-Y.: Academic Press, 1998. 3224 p.Palik E. D. Handbook of optical constants of solids. N-Y.: Academic Press, 1998, 3224 p.Борисенко С. И., Ревинская О. Г., Кравченко Н. С., Чернов А. В. Показатель преломления света и методы его экспериментального определения. Томск: Томский политехнический университет, 2014. 146 с.Borisenko S. I., Revinskaya O. G., Kravchenko N. S., Chernov A. V. Pokazatel’ prelomleniya sveta i metody ego eksperimental’nogo opredeleniya [The refractive index of light and methods of its experimental determination]. Tomsk: Tomskii politekhnicheskii universitet, 2014. 146 p. (In Russ.)Stephenson D. Modeling variation in the refractive index of optical glasses. Thesis. NY.: Rochester Institute of Technology, 1990. 163 p. URL: http://scholarworks.rit.edu/thesesStephenson D. Modeling variation in the refractive index of optical glasses: thesis. N-Y.: Rochester Institute of Technology, 1990, 163 p.Вавилов В. С. Действие излучений на полупроводники. М.: Гос. изд-во физ.-мат. лит-ры, 1963. 264 с.Vavilov V. S. Deistvie izluchenii na poluprovodniki [Effect of radiation on semiconductors]. Moscow: Gosudarstvennoe izdatel’stvo fiziko-matematicheskoi literatury, 1963, 264 p. (In Russ.)Kitaura M., Sato A., Kamada K., Kurosawa S., Ohnishi A., Sasaki M., Hara K. Photoluminescence studies on energy transfer processes in ceriumdoped Gd3Al2Ga3O12 crystals // Optical Mater. 2015. V. 41. P. 45—48. DOI: 10.1016/j.optmat.2014.12.040Kitaura M., Sato A., Kamada K., Kurosawa S., Ohnishi A., Sasaki M., Hara K. Photoluminescence studies on energy transfer processes in cerium-doped Gd3Al2Ga3O12 crystals. Optical Mater., 2015, vol. 41, pp. 45—48. DOI: 10.1016/j.optmat.2014.12.040Bartosiewicz K., Babin V., Kamada K., Yoshikawa A., Nikl M. Energy migration processes in undoped and Cedoped multicomponent garnet single crystal scintillators // J. Luminescence. 2015. V. 166. P. 117—122. DOI: 10.1016/j.jlumin.2015.05.015Bartosiewicz K., Babin V., Kamada K., Yoshikawa A., Nikl M. Energy migration processes in undoped and Ce-doped multicomponent garnet single crystal scintillators. J. Luminescence, 2015, vol. 166, pp. 117—122. DOI: 10.1016/j.jlumin.2015.05.015Zhaohua Luo, Haochuan Jiang, Jun Jiang, Rihua Mao. Microstructure and optical characteristics of Ce : Gd3(Ga, Al)5O12 ceramic for scintillator application // Ceramics International. 2015. V. 41, Iss. 1, Pt A. P. 873—876. DOI: 10.1016/j.ceramint.2014.08.137Zhaohua Luo, Haochuan Jiang, Jun Jiang, Rihua Mao. Microstructure and optical characteristics of Ce : Gd3(Ga, Al)5O12 ceramic for scintillator application. Ceramics International, 2015, vol. 41, no. 1, pt A, pp. 873—876. DOI: 10.1016/j.ceramint.2014.08.137Auffray E., Augulis R., Borisevich A., Gulbinas V., Fedorov A., Korjik M., Lucchini M. T., Mechinsky V., Nargelas S., Songaila E., Tamulaitis G., Vaitkevičius A., Zazubovich S. Luminescence rise time in self-activated PbWO4 and Cedoped Gd3Al2Ga3O12 scintillation crystals // J. Luminescence. 2016. V. 178. P. 54—60. DOI: 10.1016/j.jlumin.2016.05.015Auffray E., Augulis R., Borisevich A., Gulbinas V., Fedorov A., Korjik M., Lucchini M. T., Mechinsky V., Nargelas S., Songaila E., Tamulaitis G., Vaitkevičius A., Zazubovich S. Luminescence rise time in selfactivated PbWO4 and Cedoped Gd3Al2Ga3O12 scintillation crystals. J. Luminescence, 2016, vol. 178, pp. 54—60. DOI: 10.1016/j.jlumin.2016.05.015Marcus P. Corrosion mechanism in theory and practice. N-Y: CRC Press, 2012. 930 p.Marcus P. Corrosion mechanism in theory and practice. N-Y: CRC Press, 2012, 930 p.Xu Y. N., Ching W. Y., Brickeen B. K. Electronic structure and bonding in garnet crystals Gd3Sc2Ga3O12, Gd3Sc2Al3O12, and Gd3Ga3O12 compared to Y3Al5O12 // Phys. Rev. B. 2000. V. 61, Iss. 3. P. 1817. DOI: 10.1103/PhysRevB.61.1817Xu Y. N., Ching W. Y., Brickeen B. K. Electronic structure and bonding in garnet crystals Gd3Sc2Ga3O12, Gd3Sc2Al3O12, and Gd3Ga3O12 compared to Y3Al5O12. Phys. Rev. B, 2000, vol. 61, no. 3, p. 1817. DOI: 10.1103/PhysRevB.61.1817Rawat S., Tyagi M., Netrakanti P. K., Kashyap V. K. S., Mitra A., Singh A. K., Desai D. G., Kumar G. A., Gadkari S. C. Pulse shape discrimination properties of Gd3Ga3Al2O12 : Ce, B single crystal in comparison with CsI : Tl // Nucl. Instrum. and Meth. in Phys. Res. A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2016. V. 840. P. 186—191. DOI: 10.1016/j.nima.2016.09.060Rawat S., Tyagi M., Netrakanti P. K., Kashyap V. K. S., Mitra A., Singh A. K., Desai D. G., Kumar G. A., Gadkari S. C. Pulse shape discrimination properties of Gd3Ga3Al2O12 : Ce, B single crystal in comparison with CsI : Tl. Nucl. Instrum. and Meth. in Phys. Res. A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2016, vol. 840, pp. 186—191. DOI: 10.1016/j.nima.2016.09.060Hassanien A. S., Akl A. A. Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films // Superlattices and Microstructures. 2016. V. 89. P. 153—169. DOI: 10.1016/j.spmi.2015.10.044Hassanien A. S., Akl A. A. Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films. Superlattices and Microstructures, 2016, vol. 89, pp. 153—169. DOI: 10.1016/j.spmi.2015.10.044Jacob R., Isac J. Band gap energy profile of BSFT Ba0.6Sr0.4FexTi(1−x)O3−∆ (x = 0.1) // Int. J. Sci. Res. Publ. 2014. V. 4, Iss. 12, P. 1—6. URL: http://www.ijsrp.org/research-paper-1214.php?rp=P363435Jacob R., Isac J. Band gap energy profile of BSFT Ba0.6Sr0.4FexTi(1−x)O3−∆ (x = 0.1) // Int. J. Sci. Res. Publ. 2014. V. 4, Iss. 12, P. 1—6. URL: http://www.ijsrp.org/research-paper-1214.php?rp=P363435Banerjee A. N., Maity R., Chattopadhyay K. K. Preparation of ptype transparent conducting CuAlO2 thin films by reactive DC sputtering // Mater. Lett. 2004. V. 58, Iss. 1–2. P. 10—13. DOI: 10.1016/S0167-577X(03)00395-1Banerjee A. N., Maity R., Chattopadhyay K. K. Preparation of p-type transparent conducting CuAlO2 thin films by reactive DC sputtering. Mater. Lett., 2004, vol. 58, no. 1–2, pp. 10—13. DOI: 10.1016/S0167-577X(03)00395-1Mishra V., Sagdeo A., Warshi K., Rai H. M., Saxena S. K., Kumar R., Sagdeo P. R. Metastable behavior of Urbach tail states in BaTiO3 across phase transition // arXiv: Condensed Matter. 2016. URL: https://arxiv.org/abs/1612.06756Mishra V., Sagdeo A., Warshi K., Rai H. M., Saxena S. K., Kumar R., Sagdeo P. R. Metastable behavior of Urbach tail states in BaTiO3 across phase transition. arXiv: Condensed Matter., 2016. URL: https://arxiv.org/abs/1612.067Kozlova N. S., Goreeva Zh. A., Zabelina Ev. V. Testing quality assurance of single crystals and stock on their base. IEEE 2nd Internat. Ural Conf. on Measurements (UralCon). Chelyabinsk (Russia), 2017, pp. 15—22. DOI: 10.1109/URALCON.2017.8120681Kozlova N. S., Goreeva Zh. A., Zabelina Ev. V. Testing quality assurance of single crystals and stock on their base. IEEE 2nd Internat. Ural Conf. on Measurements (UralCon). Chelyabinsk (Russia), 2017, pp. 15–22. DOI: 10.1109/URALCON.2017.8120681

The authors declare that there are no conflicts of interest present.