mateltechИзвестия высших учебных заведений. Материалы электронной техникиIzvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering1609-35772413-6387MISIS10.17073/1609-3577-2019-2-104-111mateltech-355Research ArticleНаноматериалы и нанотехнологииNANOMATERIALS AND NANOTECHNOLOGYТранспортные свойства ориентированной и изотропной бумаги из одностенных углеродных нанотрубокPreparation and transport properties of oriented buckypapers with single walled carbon nanotubeshttps://orcid.org/0000-0002-3088-3428ГалковМ. С.GalkovM. S.

1804 Embarcadero Rd., Suite 202, Palo Alto, California, 94303, USA

Галков Михаил Сергеевич — научный сотрудник

1804 Embarcadero Rd., Suite 202, Palo Alto, California, 94303

Mikhail S. Galkov

galkov.michael@gmail.comhttps://orcid.org/0000-0001-6111-5774СтепинаН. П.StepinaN. P.

просп. Акад. Лаврентьева, д. 13, Новосибирск, 630090, Россия

Степина Наталья Петровна — доктор физ.-мат. наук, доцент, старший научный сотрудник

13 Lavrent’ev Ave., Novosibirsk 630090, Russia

Natalia P. Stepina

Nstepina@mail.ruПредтеченскийМ. P.PredtechenskiyM. R.

1804 Embarcadero Rd., Suite 202, Palo Alto, California, 94303, USA

Предтеченский Михаил Рудольфович

1804 Embarcadero Rd., Suite 202, Palo Alto, California, 94303

Mikhail R. Predtechenskiy

БезродныйА. Е.BezrodnyA. E.

1804 Embarcadero Rd., Suite 202, Palo Alto, California, 94303, USA

Безродный Александр Евгеньевич

1804 Embarcadero Rd., Suite 202, Palo Alto, California, 94303

Alexander E. Bezrodny

КириенкоВ. В.KirienkoV. V.

просп. Акад. Лаврентьева, д. 13, Новосибирск, 630090, Россия

Кириенко Виктор Владимирович

13 Lavrent’ev Ave., Novosibirsk 630090, Russia

Viktor V. Kirienko

https://orcid.org/0000-0001-5443-4769ДвуреченскийА. В.DvurechenskiiA. V.

просп. Акад. Лаврентьева, д. 13, Новосибирск, 630090, Россия

Двуреченский Анатолий Васильевич —

13 Lavrent’ev Ave., Novosibirsk 630090, Russia

Anatolii V. Dvurechenskii

anatoly_dv@mail.ruOCSiAl GroupСоединённые Штаты АмерикиOCSiAl GroupUnited StatesИнститут физики полупроводников имени А. В. Ржанова СО РАНРоссияInstitute of Semiconductor PhysicsRussian Federation201925012020222104111Copyright © Галков М.С., Степина Н.П., Предтеченский М.P., Безродный А.Е., Кириенко В.В., Двуреченский А.В., 20192019Галков М.С., Степина Н.П., Предтеченский М.P., Безродный А.Е., Кириенко В.В., Двуреченский А.В.Galkov M.S., Stepina N.P., Predtechenskiy M.R., Bezrodny A.E., Kirienko V.V., Dvurechenskii A.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://met.misis.ru/jour/article/view/355

Бумага (buckypaper – BP) из одностенных углеродных нанотрубок (ОУНТ) является перспективным материалом для использования в качестве компонентов микро- и наноэлектроники, в которых требуется высокая удельная электро- и теплопроводность, а также высокая удельная прочность. Изотропные образцы BP из ОУНТ сформированы фильтрацией дисперсии из ОУНТ для удаления растворителя. Для увеличения проводимости ВР проводилась ориентация ОУНТ вдоль выделенного направления, а также дополнительное легирование ОУНТ в парах йода. Ориентация ОУНТ осуществлялась с помощью экструзии через щель раствора из ОУНТ. Проведено сравнение температурных зависимостей электропроводности изотропных, ориентированных и легированных образцов ВР для выявления механизма проводимости и роли ориентации ОУНТ. Показано, что ориентирование пучков ОУНТ вдоль выделенного направления позволяет увеличить проводимость ВР с ~103 См/cм до ~104 См/cм, а легирование ориентированных образцов в парах йода увеличивает электропроводность еще на порядок. Механизм низкотемпературной проводимости по ВР описан флуктуационно-индуцированным туннелированием носителей заряда между пучками ОУНТ.

Buckypapers (BP) with carbon nanotubes (CNT) are very promising for a lot of applications, in which their high conductance, strength and small weight are required. In this work, isotropic BP were prepared using the solution-based deposition that includes the single walled carbon nanotubes (SWCNT) dispersion and the dispersion filtration from a solvent. To increase the BP conductivity, the orientation of the SWCNT bundles composing BP and a following iodine doping were applied. The method of extrusion through the narrow (300 µm) gap was used for the SWCNT orientation. The temperature dependences of conductance for isotropic, oriented and doped BP were studied to understand the effect of CNT alignment and the mechanism of transport through SWCNT BP. It was shown that bundle orientation increases the BP conductivity from ~103 S × cm-1 to ~104 S × cm-1, and iodine doping of oriented samples additionally increase the conductivity by an order. The fluctuation – assisted tunneling between CNT bundles was used to describe the mechanism of low temperature conductivity.

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