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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mateltech</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений. Материалы электронной техники</journal-title><trans-title-group xml:lang="en"><trans-title>Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1609-3577</issn><issn pub-type="epub">2413-6387</issn><publisher><publisher-name>MISIS</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17073/1609-3577-2019-3-190-196</article-id><article-id custom-type="elpub" pub-id-type="custom">mateltech-363</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Математическое моделирование в материаловедении электронных компонентов</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MATHEMATICAL MODELING IN MATERIALS SCIENCE OF ELECTRONIC COMPONENTS</subject></subj-group></article-categories><title-group><article-title>Вычисление эффективного коэффициента теплопроводности сверхрешетки на основе кинетического уравнения Больцмана с использованием первопринципных расчетов</article-title><trans-title-group xml:lang="en"><trans-title>Calculation of the effective thermal conductivity of a superlattice based on the Boltzmann transport equation using first-principle calculations</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-0059-0712</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Абгарян</surname><given-names>К. К.</given-names></name><name name-style="western" xml:lang="en"><surname>Abgaryan</surname><given-names>K. K.</given-names></name></name-alternatives><bio xml:lang="ru"/><bio xml:lang="en"/><email xlink:type="simple">kristal83@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Колбин</surname><given-names>И. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Kolbin</surname><given-names>I. S.</given-names></name></name-alternatives><bio xml:lang="ru"/><bio xml:lang="en"/><email xlink:type="simple">iskolbin@gmail.com</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Федеральный исследовательский центр «Информатика и управление» &#13;
Российской академии наук, &#13;
ул. Вавилова, д. 44, корп. 2, Москва, 119333, Россия&#13;
Московский авиационный институт (национальный исследовательский университет), &#13;
Волоколамское шоссе, д. 4, Москва, 125993, Россия</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Federal Research Centre “Information and Control” of the Russian Academy of Sciences, &#13;
44 Vavilov Str., Moscow 119333, Russia&#13;
Moscow Aviation Institute (National Research University), 4 Volokolamskoe shosse, 4, Moscow, 125993, Russia</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Федеральный исследовательский центр «Информатика и управление» &#13;
Российской академии наук, &#13;
ул. Вавилова, д. 44, корп. 2, Москва, 119333, Россия</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Federal Research Centre “Information and Control” of the Russian Academy of Sciences, &#13;
44 Vavilov Str., Moscow 119333, Russia</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2019</year></pub-date><pub-date pub-type="epub"><day>13</day><month>02</month><year>2020</year></pub-date><volume>22</volume><issue>3</issue><fpage>190</fpage><lpage>196</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Абгарян К.К., Колбин И.С., 2020</copyright-statement><copyright-year>2020</copyright-year><copyright-holder xml:lang="ru">Абгарян К.К., Колбин И.С.</copyright-holder><copyright-holder xml:lang="en">Abgaryan K.K., Kolbin I.S.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://met.misis.ru/jour/article/view/363">https://met.misis.ru/jour/article/view/363</self-uri><abstract><p>В работе проводится вычисление эффективного коэффициента теплопроводности для бинарной полупроводниковой гетероструктуры на примере сверхрешетки GaAs/AlAs для различных периодов слоев и при различных температурах окружающей среды. На рассматриваемых масштабах использование моделей, основанных на законе Фурье, сильно ограничено, т. к. они не учитывают квантовомеханические свойства материалов, что дает сильное расхождение с экспериментальными данными. С другой стороны, использование методов молекулярной динамики позволяет получить точные решения, но они существенно более требовательны к вычислительным ресурсам и требуют решение нетривиальной задачи подбора потенциала. При рассмотрении наноструктур хорошие результаты показали методы, основанные на решении кинетического уравнения Больцмана для фононов, они позволяют получить достаточно точное решение, при этом обладая меньшей вычислительной сложностью, чем методы молекулярной динамики. Для расчета коэффициента теплопроводности в работе используется модель модального подавления, аппроксимирующая решение кинетического уравнения Больцмана для фононов. Дисперсионные параметры и параметры рассеяния фононов получены из первопринципных расчетов. В работе учитываются двух фононные, связанные с изотопичеким беспорядком и барьерные, и трех фононные процессы рассеяния. Для повышения точности вычислений, в работе учитывается неоднородность распределения материалов по слоям сверхрешетки. Проведено сравнение полученных результатов с экспериментальными данными, продемонстрировано хорошее соответствие.</p></abstract><trans-abstract xml:lang="en"><p>In this work, we calculate the effective thermal conductivity coefficient for a binary semiconductor heterostructure using the GaAs/AlAs superlattice as an example. Different periods of layers and different ambient temperatures are considered. At the scale under consideration, the use of models based on the Fourier law is very limited, since they do not take into account the quantum-mechanical properties of materials, which gives a strong discrepancy with experimental data. On the other hand, the use of molecular dynamics methods allows us to obtain accurate solutions, but they are significantly more demanding on computing resources and also require solving a non-trivial problem of potential selection. When considering nanostructures, good results were shown by methods based on the solution of the Boltzmann transport equation for phonons; they allow one to obtain a fairly accurate solution, while having less computational complexity than molecular dynamics methods. To calculate the thermal conductivity coefficient, a modal suppression model is used that approximates the solution of the Boltzmann transport equation for phonons. The dispersion parameters and phonon scattering parameters are obtained from first-principle calculations. The work takes into account 2-phonon (associated with isotopic disorder and barriers) and 3-phonon scattering processes. To increase the accuracy of calculations, the non-digital profile of the distribution of materials among the layers of the superlattice is taken into account. The obtained results are compared with experimental data showing good agreement.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>коэффициент теплопроводности</kwd><kwd>сверхрешетка</kwd><kwd>полупроводниковая гетероструктура</kwd></kwd-group><kwd-group xml:lang="en"><kwd>thermal conductivity coefficient</kwd><kwd>superlattice</kwd><kwd>semiconductor heterostructure</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа выполнена при поддержке грантов РФФИ №№ 19-08-01191А и 18-29-03100. Для расчетов использовался вычислительный кластер ФИЦ ИУ РАН.</funding-statement><funding-statement xml:lang="en">This work was supported by grants from the Russian Foundation for Basic Research Nos. 19-08-01191A and 18-29-03100. 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