mateltechИзвестия высших учебных заведений. Материалы электронной техникиIzvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering1609-35772413-6387MISIS10.17073/1609-3577-2020-1-5-56mateltech-383Research ArticleСТАТЬИARTICLESБидоменные сегнетоэлектрические кристаллы: свойства и перспективы примененияBidomain ferroelectric crystals: properties and prospects of applicationhttps://orcid.org/0000-0002-6569-466XКубасовИ. В.KubasovI. V.

Ленинский просп., д. 4, Москва, 119049

Кубасов Илья Викторович — ассистент, кафедра Материаловедения полупроводников и диэлектриков

4 Leninsky Prospekt, Moscow 119049

Ilya V. Kubasov: Assistant

kubasov.ilya@gmail.comhttps://orcid.org/0000-0001-7185-8715КислюкА. М.KislyukA. M.

Ленинский просп., д. 4, Москва, 119049

Кислюк Александр Михайлович — инженер 1-й категории, кафедра Материаловедения полупроводников и диэлектриков

4 Leninsky Prospekt, Moscow 119049

Alexander M. Kislyuk: 1st category Engineer

akislyuk94@gmail.comhttps://orcid.org/0000-0003-1090-3441ТурутинА. В.TurutinA. V.

Ленинский просп., д. 4, Москва, 119049

Турутин Андрей Владимирович — инженер 1-й категории, кафедра Материаловедения полупроводников и диэлектриков

4 Leninsky Prospekt, Moscow 119049

Andrey V. Turutin: 1st category Engineer

aturutin92@gmail.comhttps://orcid.org/0000-0001-9531-6072МалинковичМ. Д.MalinkovichM. D.

Ленинский просп., д. 4, Москва, 119049

Малинкович Михаил Давыдович — канд. физ.-мат. наук, доцент, кафедра Материаловедения полупроводников и диэлектриков

4 Leninsky Prospekt, Moscow 119049

Mikhail D. Malinkovich: Cand. Sci. (Phys.-Math.), Associate Professor

malinkovich@yandex.ruhttps://orcid.org/0000-0002-1970-9867ПархоменкоЮ. Н.ParkhomenkoYu. N.

Ленинский просп., д. 4, Москва, 119049;

ул. Электродная, д. 2, Москва, 111524

Пархоменко Юрий Николаевич — доктор физ.-мат. наук, профессор, заведующий кафедрой Материаловедения полупроводников и диэлектриков

4 Leninsky Prospekt, Moscow 119049;

2 Electrodnaya Str., Moscow 111524

Yuriy N. Parkhomenko: Dr. Sci. (Phys.-Math.), Professor, Head of the Department of Department of Materials Science of Semiconductors and Dielectrics

parkh@rambler.ruНациональный исследовательский технологический университет «МИСиС»РоссияNational University of Science and Technology MISiSRussian FederationНациональный исследовательский технологический университет «МИСиС»; АО «Государственный научно-исследовательский и проектный институт редкометаллической промышленности «Гиредмет»РоссияNational University of Science and Technology MISiS; JSC “Giredmet”Russian Federation202023062020231556Copyright © Кубасов И.В., Кислюк А.М., Турутин А.В., Малинкович М.Д., Пархоменко Ю.Н., 20202020Кубасов И.В., Кислюк А.М., Турутин А.В., Малинкович М.Д., Пархоменко Ю.Н.Kubasov I.V., Kislyuk A.M., Turutin A.V., Malinkovich M.D., Parkhomenko Y.N.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://met.misis.ru/jour/article/view/383

Ниобат лития (LiNbO3) и танталат лития (LiTaO3) относятся к важнейшим и наиболее широко применяемым материалам когерентной и нелинейной оптики, а также акустики. Высокие требования, предъявляемые к однородности и воспроизводимости характеристик, стали основой для создания промышленной технологии выпуска высококачественных кристаллов, освоенной многими предприятиями мира. Однако использование LiNbO3 и LiTaO3 не ограничивается перечисленными выше областями техники благодаря выраженным пьезо- и сегнетоэлектрическим свойствам. Одним из перспективных направлений использования кристаллов является создание на их основе электромеханических преобразователей для прецизионных сенсоров и актюаторов. При этом высокая термическая стабильность пьезоэлектрических и механических свойств, отсутствие гистерезиса и крипа позволяют создавать электромеханические преобразователи, способные работать в широком диапазоне температур, недостижимом для обычно используемых для этих целей сегнетокерамических материалов. Главным преимуществом LiNbO3 и LiTaO3 перед другими монокристаллическими пьезоэлектриками является возможность направленного воздействия на характеристики устройств путем управления сегнетоэлектрической доменной структурой кристаллов. Одним из наиболее ярких примеров использования доменной инженерии для создания электромеханических преобразователей на основе кристаллов является формирование в них так называемой бидоменной структуры — двух доменов макроскопического размера, расположенных в одной кристаллической пластине, имеющих встречно направленные векторы спонтанной поляризации и разделенных заряженной доменной стенкой. Высокие коэрцитивные поля переключения делают инверсные домены стабильными вплоть до температуры Кюри (порядка 1140 °C у LiNbO3 и 600 °C у LiTaO3). В обзоре рассмотрены основные достижения в области формирования бидоменной структуры и приповерхностных инверсных доменов в кристаллах LiNbO3 и LiTaO3. Представлены методы визуализации доменной структуры в кристаллах и неразрушающие методы контроля положения междоменной границы. Проведен сравнительный анализ методов формирования инверсных доменов в кристаллах, обсуждены закономерности и технологические приемы управления доменной структурой. Приведены основные физические модели, предложенные в литературе для объяснения эффекта образования инверсных доменов, рассмотрены их сильные и слабые стороны. Кратко перечислены способы выбора кристаллографического среза для создания устройств, в которых используются бидоменные кристаллы. Приведены примеры реализации устройств на основе бидоменных кристаллов: актюаторов, сенсоров, акустических преобразователей, систем сбора бросовой энергии.

Lithium niobate (LiNbO3) and lithium tantalate (LiTaO3) are among the most important and most widely used materials of coherent and nonlinear optics, as well as acoustics. High degree of uniformity and reproducibility has become the foundation of technology for manufacturing high-quality crystals, absorbed by many suppliers around the world. However, the above areas do not limit the use of LiNbO3 and LiTaO3 due to their unique piezoelectric and ferroelectric properties. One promising application of crystals is the design of electromechanical transducers for precision sensors and actuators. In this respect, the high thermal stability of the piezoelectric and mechanical properties, the lack of hysteresis and creep make it possible to create electromechanical converters with wide operating temperature range, that is beyond the capability of commonly used ferroelectric ceramics. The main advantage of LiNbO3 and LiTaO3 over other single-crystal piezoelectrics is ferroelectric domain structure regulation toward targeted impact on the device characteristics. One of the most striking examples of electromechanical transducer design through domain engineering is the formation of a so-called bidomain ferroelectric structure in crystal. It represents a single-crystalline plate with two macrodomains with opposite directions of spontaneous polarization vectors separated by a charged domain wall. High switching fields make inversion domains stable at temperatures up to 1000 °C. This review summarizes the main achievements in the formation of bidomain structure and near surface inversion domains in LiNbO3 and LiTaO3 crystals. We present the domain structure virtualization methods in crystals and non-destructive methods for controlling the domain boundary position. The report contains a comparative analysis of the methods for forming inversion domains in crystals, and the patterns and technological control methods of the domain structure are discussed. The basic physical models have been proposed in the literature to explain the effect of the inversion domains formation. In the present paper we outline what one sees as strengths and weaknesses of these models. The strategies of crystallographic cut selection to create devices based on bidomain crystals are briefly discussed. We provide examples of the implementation of devices based on bidomain crystals such as actuators, sensors, acoustic transducers, and waste energy collection systems.

ниобат литиятанталат литиябидоменный кристаллдиффузионный отжигкристаллографический срезактюаторысенсорымагнетоэлектрический эффектпьезоэлектричествоодноосный сегнетоэлектрикинверсный доменlithium niobatelithium tantalatebidomain crystaldiffusion annealingcrystal cutactuatorssensorsmagnetoelectric effectpiezoelectricityuniaxial ferroelectricinversion domainРабота выполнена при финансовой поддержке Министерства образования и науки Российской Федерации в рамках Государственного задания (фундаментальные исследования, проект № 0718-2020-0031 «Новые магнитоэлектрические композитные материалы на основе оксидных сегнетоэлектриков с упорядоченной доменной структурой: получение и свойства». 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The authors declare that there are no conflicts of interest present.