mateltechИзвестия высших учебных заведений. Материалы электронной техникиIzvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering1609-35772413-6387MISISmateltech-401Research ArticleРедакционная статьяEDITORIALReview on the book Nuclear Doping of Semiconductor Materials (second edition, revised)SobolevN. A.sobolev@ua.ptAveiro University (Department of Physics)Portugal202008082020232162162Copyright © Sobolev N.A., 20202020Sobolev N.A.Sobolev N.A.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://met.misis.ru/jour/article/view/401
Executive Editor, Dr. Sci. (Engineering) V. A. Kharchenko
semiconductorsdopingnuclear reactionssilicon single crystalsneutron irradiationradiation defectsannealingelectrophysical properties.ReferencesLark-Horovitz K. Nucleon bombarded semiconductors. In: Reading conference on semiconductor materials. London: Butterworth’s Scientific Publications, 1951: 47–78.Lark-Horovitz K. Nucleon bombarded semiconductors. In: Reading conference on semiconductor materials. London: Butterworth’s Scientific Publications, 1951: 47–78.Smirnov L. S., Solov'ev S. P., Stas' V. F., Kharchenko V. A. Doping of semiconductors by nuclear reaction method. Novosibirsk: Nauka, 1981, 182 p. (In Russ.)Smirnov L. S., Solov'ev S. P., Stas' V. F., Kharchenko V. A. Doping of semiconductors by nuclear reaction method. Novosibirsk: Nauka, 1981, 182 p. (In Russ.)Kharchenko V. A., Soloviev S. P. Radiation doping of silicon. Fizika i tekhnika poluprovodnikov, 1971, vol. 5, no. 8, pp. 1641—1643. (In Russ.)Kharchenko V. A., Soloviev S. P. Radiation doping of silicon. Fizika i tekhnika poluprovodnikov, 1971, vol. 5, no. 8, pp. 1641—1643. (In Russ.)
The authors declare that there are no conflicts of interest present.