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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mateltech</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений. Материалы электронной техники</journal-title><trans-title-group xml:lang="en"><trans-title>Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1609-3577</issn><issn pub-type="epub">2413-6387</issn><publisher><publisher-name>MISIS</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17073/1609-3577-2018-4-216-226</article-id><article-id custom-type="elpub" pub-id-type="custom">mateltech-404</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Наноматериалы и нанотехнологии</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>NANOMATERIALS AND NANOTECHNOLOGY</subject></subj-group></article-categories><title-group><article-title>Осаждение легированных никелем наночастиц ZnO с повышенной чувствительностью к этанолу при низких температурах</article-title><trans-title-group xml:lang="en"><trans-title>Precipitated nickel doped ZnO nanoparticles with enhanced low temperature ethanol sensing properties</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Годаварти</surname><given-names>У.</given-names></name><name name-style="western" xml:lang="en"><surname>Godavarti</surname><given-names>U.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Медчел, Хайдарабад 501401:</p><p>Латур 413512</p></bio><bio xml:lang="en"><p>Medchel, Hyderabad 501401, Telangana;</p><p>Latur 413512, Maharashtra</p><p>Umadevi Godavarti</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Моте</surname><given-names>В. Д.</given-names></name><name name-style="western" xml:lang="en"><surname>Mote</surname><given-names>V. D.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Латур 413512</p></bio><bio xml:lang="en"><p>Latur 413512, Maharashtra</p><p>V. D. Mote</p></bio><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Дасари</surname><given-names>М.</given-names></name><name name-style="western" xml:lang="en"><surname>Dasari</surname><given-names>M.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Висакхапатнам 530045</p></bio><bio xml:lang="en"><p>Visakhapatnam 530045, Andhra Pradesh</p><p>Madhavaprasad Dasari</p></bio><xref ref-type="aff" rid="aff-3"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Технический кампус CMR;&#13;
Научный колледж Даянанда</institution><country>Индия</country></aff><aff xml:lang="en"><institution>Department of Physics, CMR Technical Campus;&#13;
Thin Films and Materials Research Laboratory, Department of Physics, Dayanand Science College</institution><country>India</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Научный колледж Даянанда</institution><country>Индия</country></aff><aff xml:lang="en"><institution>Thin Films and Materials Research Laboratory, Department of Physics, Dayanand Science College</institution><country>India</country></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Университет GITAM</institution><country>Индия</country></aff><aff xml:lang="en"><institution>Department of Physics, GITAM Institute of Technology, GITAM University</institution><country>India</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2018</year></pub-date><pub-date pub-type="epub"><day>25</day><month>01</month><year>2021</year></pub-date><volume>21</volume><issue>4</issue><fpage>216</fpage><lpage>226</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Годаварти У., Моте В.Д., Дасари М., 2019</copyright-statement><copyright-year>2019</copyright-year><copyright-holder xml:lang="ru">Годаварти У., Моте В.Д., Дасари М.</copyright-holder><copyright-holder xml:lang="en">Godavarti U., Mote V.D., Dasari M.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://met.misis.ru/jour/article/view/404">https://met.misis.ru/jour/article/view/404</self-uri><abstract><p>В настоящее время особое значение приобретает развитие технологии сенсоров летучих и токсичных газов для контроля загрязнения окружающей среды, в промышленной технике безопасности и в повседневной жизни. ZnO – перспективный материал для создания газовых сенсоров благодаря его электрохимической устойчивости, нетоксичности, возможности легирования и низкой себестоимости. метод осаждения может стать простой и экономичной альтернативой. Наночастицы Zn1-xNixO синтезированы с использованием нового метода совместного осаждения. Полученные наночастицы исследовали методами рентгеновской дифрактометрии, сканирующей электронной микроскопии, просвечивающей электронной микроскопии и фотолюминесценции. Подтверждено наличие гексагональной структуры типа вюрцита без вторых фаз в образцах ZnO с замещением Ni. Исследования методом фотолюминесценции показали наличие во всех образцах максимума в диапазоне 380–390 нм, относящегося к кислородным вакансиям. Испытания газочувствительности показали, что сенсоры на основе ZnO, легированного Ni, обладает значительно более высокой чувствительностью по сравнению с чистым ZnO при оптимальной температуре 100 °С. Сенсор определяет наличие газообразного этанола в широком диапазоне концентраций и отличается быстродействием, малым временем восстановления, высокой селективностью и воспроизводимостью результатов. Обсужден возможный механизм формирования газочувствительности. Быстродействие сенсоров на основе наночастиц ZnO объясняется большой контактной площадью поверхности для электронов, кислорода, молекул определяемого газа и наличием большого числа каналов диффузии газа. Высокая эффективность сенсоров говорит о том, что ZnO, легированный Ni, является перспективным наноматериалом для создания газовых сенсоров. При температуре 100 °С время отклика и восстановления нелегированного ZnO составляет 75 и 60 с соответственно, в то время как при легировании 0,25 % (ат.) Ni – 60 и 45 с.</p></abstract><trans-abstract xml:lang="en"><p>The Zn1-xNixO nanoparticles have been synthesized by novel co-precipitation method and systematically characterized by XRD, SEM, TEM and photo luminescence. The XRD patterns confirm the hexagonal wurzite structure without secondary phases in Ni substituted ZnO samples. SEM and TEM are used for the estimation of particle shape and size. In PL study there is a peak in the range of 380—390 nm in all samples that is attributed to the oxygen vacancies. Gas sensing tests reveal that Ni doped ZnO sensor has remarkably enhanced performance compared to pure ZnO detected at an optimum temperature 100 °C. It could detect ethanol gas in a wide concentration range with very high response, fast response–recovery time, good selectivity and stable repeatability. The possible sensing mechanism is discussed. The high response of ZnO Nanoparticles was attributed to large contacting surface area for electrons, oxygen, target gas molecule, and abundant channels for gas diffusion. The superior sensing features indicate the present Ni doped ZnO as a promising nanomaterial for gas sensors. The response time and recovery time of undoped is 75 s and 60 s and 0.25 at.% Ni are found to be 60 s and 45 s at 100 °C respectively.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>ZnO</kwd><kwd>наночастицы</kwd><kwd>рентгеновская дифракция</kwd><kwd>селективность</kwd><kwd>повышенная чувствительность</kwd></kwd-group><kwd-group xml:lang="en"><kwd>ZnO</kwd><kwd>nanoparticles</kwd><kwd>XRD</kwd><kwd>selectivity</kwd><kwd>superior sensing</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Mitsubayashi K., Amagai H., Watanabe H., Nakayama Y. Bioelectronic sniffer with a diaphragm flow-cell for acetaldehyde vapor // Sens. Actuators B: Chem. 2003. V. 95, N 1–3. P. 303—308. DOI: 10.1016/S0925-4005(03)00428-3</mixed-citation><mixed-citation xml:lang="en">Mitsubayashi K., Amagai H., Watanabe H., Nakayama Y. 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