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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mateltech</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений. Материалы электронной техники</journal-title><trans-title-group xml:lang="en"><trans-title>Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1609-3577</issn><issn pub-type="epub">2413-6387</issn><publisher><publisher-name>MISIS</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17073/1609-3577-2021-3-162-169</article-id><article-id custom-type="elpub" pub-id-type="custom">mateltech-445</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Материаловедение и технология. Диэлектрики</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MATERIALS SCIENCE AND TECHNOLOGY. DIELECTRICS</subject></subj-group></article-categories><title-group><article-title>Диэлектрические и пьезоэлектрические свойства керамики PLZT x/40/60 (x = 5; 12)</article-title><trans-title-group xml:lang="en"><trans-title>Dielectric and piezoelectric properties  of PLZT x/40/60 (x = 5; 12) ceramics</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Щеглова</surname><given-names>А. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Shcheglova</surname><given-names>A. I.</given-names></name></name-alternatives><bio xml:lang="ru"><p>ул. Желябова, д. 33, Тверь, 170100</p><p>Щеглова Анастасия Игоревна — магистрант</p><p> </p></bio><bio xml:lang="en"><p>33 Zhelyabova Str., Tver 170100</p><p>Anastasiya I. Shcheglova — Master of Science</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-3418-7929</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Кислова</surname><given-names>И. Л.</given-names></name><name name-style="western" xml:lang="en"><surname>Kislova</surname><given-names>I. L.</given-names></name></name-alternatives><bio xml:lang="ru"><p>ул. Желябова, д. 33, Тверь, 170100</p><p>Кислова Инна Леонидовна — канд. физ.-мат. наук, доцент кафедры физики конденсированного состояния</p></bio><bio xml:lang="en"><p>33 Zhelyabova Str., Tver 170100</p><p>Inna L. Kislova — Cand. Sci. (Phys.–Math.), Associate Professor</p></bio><email xlink:type="simple">inkis@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ильина</surname><given-names>Т. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Ilina</surname><given-names>T. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ленинский просп., д. 4, Москва, 119049</p><p>Ильина Татьяна Сергеевна — младший научный сотрудник лаборатории Физики оксидных сегнетоэлектриков</p></bio><bio xml:lang="en"><p>4 Leninsky Ave., Moscow 119049</p><p>Tatiana S. Ilina — Junior Researcher</p></bio><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-1047-3007</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Киселев</surname><given-names>Д. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Kiselev</surname><given-names>D. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ленинский просп., д. 4, Москва, 119049,</p><p>Киселев Дмитрий Александрович — PhD, канд. физ.-мат. наук, заведующий лабораторией Физики оксидных сегнетоэлектриков</p></bio><bio xml:lang="en"><p>4 Leninsky Ave., Moscow 119049</p><p>Dmitry A. Kiselev — Ph.D., Cand. Sci. (Phys.–Math.), Head of the Laboratory of Physics of Oxide Ferroelectrics</p></bio><email xlink:type="simple">dm.kiselev@misis.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Барабанова</surname><given-names>Е. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Barabanova</surname><given-names>E. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>ул. Желябова, д. 33, Тверь, 170100</p><p>Барабанова Екатерина Владимировна — канд. физ.-мат. наук, доцент кафедры Прикладной физики</p></bio><bio xml:lang="en"><p>33 Zhelyabova Str., Tver 170100</p><p>Ekaterina V. Barabanova — Cand. Sci. (Phys.–Math.), Associate Professor</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Иванова</surname><given-names>А. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Ivanova</surname><given-names>A. I.</given-names></name></name-alternatives><bio xml:lang="ru"><p>ул. Желябова, д. 33, Тверь, 170100</p><p>Иванова Александра Ивановна — канд. физ.-мат. наук, доцент кафедры Прикладной физики</p></bio><bio xml:lang="en"><p>33 Zhelyabova Str., Tver 170100</p><p>Alexandra I. Ivanova — Cand. Sci. (Phys.–Math.), Associate Professor</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Тверской государственный университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Tver State University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Национальный исследовательский технологический университет «МИСиС»</institution><country>Россия</country></aff><aff xml:lang="en"><institution>National University of Science and Technology MISiS</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2021</year></pub-date><pub-date pub-type="epub"><day>21</day><month>09</month><year>2021</year></pub-date><volume>24</volume><issue>3</issue><fpage>162</fpage><lpage>169</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Щеглова А.И., Кислова И.Л., Ильина Т.С., Киселев Д.А., Барабанова Е.В., Иванова А.И., 2021</copyright-statement><copyright-year>2021</copyright-year><copyright-holder xml:lang="ru">Щеглова А.И., Кислова И.Л., Ильина Т.С., Киселев Д.А., Барабанова Е.В., Иванова А.И.</copyright-holder><copyright-holder xml:lang="en">Shcheglova A.I., Kislova I.L., Ilina T.S., Kiselev D.A., Barabanova E.V., Ivanova A.I.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://met.misis.ru/jour/article/view/445">https://met.misis.ru/jour/article/view/445</self-uri><abstract><p>Представлены результаты исследований структуры, пьезоэлектрических и диэлектрических свойств керамики цирконата-титаната свинца, модифицированной лантаном различной концентрации (PLZT). Установлено, что с повышением содержания La увеличивается размер зерен и средний размер доменов. В образцах PLZT 12/40/60 присутствуют домены как лабиринтно-подобные и периодические, так и разного латерального размера (от несколько сотен нанометров до 3 мкм в диаметре). Обнаружено, что с увеличением размеров доменов в образцах с большим содержанием лантана усиливается сигнал пьезоэлектрического отклика. Установлен факт существования участков на поверхности керамики PLZT х/40/60, имеющих внутреннее поле смещения, о чем свидетельствует асимметрия по оси напряжения петель остаточного пьезоэлектрического гистерезиса. В образцах PLZT 5/40/60 и PLZT 12/40/60 наблюдалась значительная дисперсия диэлектрической проницаемости ε(f) и максимум тангенса угла диэлектрических потерь в диапазоне частот от 105 до 106 Гц. Это связано с наличием ионной релаксационной поляризации. Установлено, что значение диэлектрической проницаемости заметно увеличивается с ростом La, что подтверждает возникновение жесткого униполярного состояния в зернах керамики PLZT 12/40/60. В исследуемых образцах на низких частотах измерительного поля наблюдается рост тангенса угла диэлектрических потерь, что связано с вкладом проводимости в tg δ. Построены зависимости фактора диэлектрических потерь ɛ” от диэлектрической проницаемости ɛ’. Они имеют вид диаграмм Коул—Коула, что свидетельствует о наличии спектра времен релаксации, при этом установлено, что в образцах PLZT 5/40/60 ширина спектра примерно в два раза меньше, чем в образцах PLZT 12/40/60.</p></abstract><trans-abstract xml:lang="en"><p>The paper presents the results of studies of the structure, piezoelectric and dielectric properties of lead zirconate-titanate ceramics modified with lanthanum of various concentrations (PLZT). It was found that with an increase in the La content, the grain size and the average domain size increase. The PLZT 12/40/60 samples contain both labyrinth-like and periodic domains, as well as different lateral sizes from several hundred nanometers to 3 microns in diameter. It was found that the piezoelectric response signal increases with increasing domain sizes in samples with a high lanthanum content. The fact of the existence of areas on surface of PLZT x/40/60 ceramics having an internal displacement field is established, as evidenced by the asymmetry of the remnant piezoelectric hysteresis loops along the voltage axis. In the samples PLZT 5/40/60 and PLZT 12/40/60, a significant dispersion of the permittivity ε(f) and a maximum of the tangent of the dielectric loss angle were observed in the frequency range from 105 to 106 Hz. This is due to the presence of ionic relaxation polarization, as is the case in ionic dielectrics. It is established that the value of the dielectric constant increases markedly with increasing La, which confirms the occurrence of a rigid unipolar state in the PLZT 12/40/60 ceramic grains. In the samples under study, an increase in the tangent of the dielectric loss angle is observed at low frequencies of the measuring field, which is associated with the contribution of conductivity to tg δ. The dependences of the dielectric loss factor ε” on the dielectric permittivity ε’are constructed. They have the form of Cole-Cole diagrams, which indicates the presence of a relaxation time spectrum, while it was found that the spectrum width in PLZT 5/40/60 samples is about two times less than in PLZT 12/40/60 samples.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>керамика PLZT</kwd><kwd>диэлектрические свойства</kwd><kwd>пьезоэлектрический отклик</kwd><kwd>поляризация</kwd><kwd>доменная структура</kwd></kwd-group><kwd-group xml:lang="en"><kwd>PLZT ceramics</kwd><kwd>dielectric properties</kwd><kwd>piezoelectric response</kwd><kwd>polarization</kwd><kwd>domain structure</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Результаты сканирующей электронной микроскопии получены с использованием ресурсов Центра коллективного пользования Тверского государственного университета. Исследования методами сканирующей зондовой микроскопии выполнены на оборудовании ЦКП “Материаловедение и металлургия” НИТУ “МИСиС” при финансовой поддержке Министерства науки и высшего образования РФ (проект № 075-15-2021-696), а также в рамках государственного задания (фундаментальные исследования, проект № 0718-2020-0031).</funding-statement><funding-statement xml:lang="en">The SEM results were obtained using the resources of the Shared Use Center of Tver State University. The scanning probe microscopy studies were performed on the equipment of the Center for Shared Use “Material Science and Metallurgy” at the National University of Science and Technology “MISiS” and were supported by the Ministry of Science and Higher Education of the Russian Federation, project No. 075-15-2021-696 and as a part of the State Assignment (basic research), project No. 0718-2020-0031.</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Сидоркин А.С. Доменная структура в сегнетоэлектриках и родственных материалах. М.: Физматлит; 2000. 240 с.</mixed-citation><mixed-citation xml:lang="en">Sidorkin A.S. Domain structure in ferroelectrics and related materials. Moscow: Fizmatlit; 2000. 240 p. 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