mateltechИзвестия высших учебных заведений. Материалы электронной техникиIzvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering1609-35772413-6387MISIS10.17073/1609-3577-2022-1-5-22mateltech-454Research ArticleСТАТЬИARTICLESЭлектрические и гальваномагнитные свойства монокристаллов черного фосфораElectrical and galvanomagnetic properties of black phosphorus single crystalshttps://orcid.org/0000-0002-7274-1380ХарченкоА. А.KharchenkoA. A.

ул. Бобруйская, д. 11, Минск, 220006

Харченко Андрей Андреевич — канд. физ.-мат. наук, старший научный сотрудник, лаборатория физики перспективных материалов

11 Bobruiskaya Str., Minsk 220006

Andrei A. Kharchenko — Cand. Sci. (Phys.-Math.), Senior Researcher, Laboratory of Advanced Materials Physics

XaaTM@mail.ruhttps://orcid.org/0000-0002-4471-0552ФедотоваЮ. А.FedotovaJ. A.

ул. Бобруйская, д. 11, Минск, 220006

Федотова Юлия Александровна — доктор физ.-мат. наук, главный научный сотрудник, заместитель директора

11 Bobruiskaya Str., Minsk 220006

Julia A. Fedotova — Dr. Sci. (Phys.-Math.), Chief Researcher, Deputy-Director

Julia@hep.byСлабухоВ. Ю.SlabukhoV. Yu.

просп. Независимости, д. 4, Минск, 220030

Слaбухо Валерия Юрьевна — студент

4 Nezalezhnosti Ave., Minsk 220030

Valeryia Yu. Slabukho — Student

vs.4550817@gmail.comhttps://orcid.org/0000-0002-7008-847XФедотовА. К.FedotovA. K.

ул. Бобруйская, д. 11, Минск, 220006

Федотов Александр Кириллович — доктор физ.-мат. наук, профессор, главный научный сотрудник лаборатории физики перспективных материалов

 

11 Bobruiskaya Str., Minsk 220006

Alexander K. Fedotov — Dr. Sci. (Phys.-Math.), Chief Researcher, Laboratory of Advanced Materials Physics

fedotov@bsu.byhttps://orcid.org/0000-0002-7787-4449ПашкевичА. В.PashkevichA. V.

ул. Бобруйская, д. 11, Минск, 220006;

просп. Независимости, д. 4, Минск, 220030

Пашкевич Алексей Владимирович — младший научный сотрудник  лаборатории физики перспективных материалов (1); аспирант (2)

11 Bobruiskaya Str., Minsk 220006;

4 Nezalezhnosti Ave., Minsk 220030

Alexey V. Pashkevich — Junior Researcher, Laboratory of Advanced Materials Physics (1); Postgraduate Student (2)

alexei.paschckevich@yandex.byhttps://orcid.org/0000-0002-4510-0190СвитоИ. А.SvitoI. A.

просп. Независимости, д. 4, Минск, 220030

Свито Иван Антонович — канд. физ.-мат. наук, заместитель заведующего кафедрой, ведущий научный сотрудник, доцент кафедры энергофизики физического факультета

4 Nezalezhnosti Ave., Minsk 220030

Ivan A. Svito — Cand. Sci. (Phys.-Math.), Deputy Head of the Department, Leading Researcher, Associate Professor of Energy Physics, Faculty of Physics

ivansvito184@gmail.comhttps://orcid.org/0000-0002-7234-6866БушинскийМ. В.BushinskyM. V.

ул. П. Бровки, д. 19, Минск, 220072

Бушинский Максим Владиславович — канд. физ.-мат. наук, заведующий лабораторией неметаллических ферромагнетиков

19 P. Brovki Str., Minsk 220072

Maxim V. Bushinsky — Cand. Sci. (Phys.-Math.), Head of Laboratory Nonmetallic Ferromagnets

bushinsky@physics.byНаучно-исследовательский институт ядерных проблем Белорусского государственного университетаБеларусьResearch Institute for Nuclear Problems of Belarusian State UniversityBelarusНаучно-исследовательский институт ядерных проблем Белорусского государственного университетаБеларусьResearch Institute for Nuclear Problems of Belarusian State UniversityBelarusБелорусский государственный университетБеларусьBelarusian State UniversityBelarusНаучно-исследовательский институт ядерных проблем Белорусского государственного университета; Белорусский государственный университетБеларусьResearch Institute for Nuclear Problems of Belarusian State University; Belarusian State UniversityBelarusГосударственное научно-производственное объединение «Научно-практический центр Национальной академии наук Беларуси по материаловедению»БеларусьSSPA “Scientific-Practical Materials Research Centre of NAS of Belarus”Belarus202214042022251522Copyright © Харченко А.А., Федотова Ю.А., Слабухо В.Ю., Федотов А.К., Пашкевич А.В., Свито И.А., Бушинский М.В., 20222022Харченко А.А., Федотова Ю.А., Слабухо В.Ю., Федотов А.К., Пашкевич А.В., Свито И.А., Бушинский М.В.Kharchenko A.A., Fedotova J.A., Slabukho V.Y., Fedotov A.K., Pashkevich A.V., Svito I.A., Bushinsky M.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://met.misis.ru/jour/article/view/454

Исследованы монокристаллы черного фосфора (b-P) с n-типом электрической проводимости, изготовленные в установке высокого давления (~1 ГПа) с шестью алмазными наковальнями при температуре 800 °C. Время синтеза составило 12 ч. Зависимости электрической проводимости σ(Т,В) и постоянной Холла Rh(Т,В) от температуры в диапазоне 2 < Т < 300 К и от магнитного поля с индукцией 0 < В < 8 Тл рассмотрены на основе однозонной и двухзонной моделей. Подгонка экспериментальных кривых σ(Т,В) и Rh(Т,В) на основе этих моделей указывает на следующие главные особенности исследованных монокристаллов: (1) собственный характер проводимости, (2) приблизительное равенство концентраций и подвижностей электронов и дырок, (3) анизотропия проводимости, концентрации и подвижности электронов и дырок, а также (4) сочетание  отрицательного и положительного вкладов в магнитосопротивление (МС, магниторезистивный эффект). В нулевом магнитном поле и при температуре ниже 50—70 К коэффициент анизотропии (α = [σа(Т) – σс(Т)]/σс(Т)) положителен, в то время как выше 220 К его знак изменяется на отрицательный вследствие специфического сочетания температурных зависимостей концентрации и подвижности носителей заряда, движущихся вдоль кристаллографических осей а и с. Показано, что отрицательный знак относительного МС преобладает при Т < 25 К и В < 6 Тл и, предположительно, обусловлен эффектами сильной локализации вследствие структурного беспорядка. Положительный знак МС (положительный магниторезистивный эффект) обусловлен движением носителей заряда под действием силы Лоренца и проявляется при температурах выше 25 К и в магнитных полях 6—8 Тл.

Black phosphorus (b-P) single crystals having the n-type electrical conductivity produced in a high pressure set-up (~1 GPa) with six diamond anvils at 800 °C for 12 h have been studied. The electrical conductivity σ(Т,В) and the Hall constant Rh(Т,В) have been analyzed within one-band and two-band models as functions of temperature in the 2 < Т < 300 K range and magnetic field in the 0 < В < 8 T range. Fitting of the experimental σ(Т,В) and Rh(Т,В) curves suggests the following key properties of the crystals: (1) intrinsic conductivity type, (2) approximately equal electron and hole concentrations and mobilities, (3) anisotropic behavior of electron and hole conductivities, concentrations and mobilities and (4) combination of negative and positive contributions to magnetoresistance (magnetoresistive effect, MR). In a zero magnetic field the anisotropy coefficient α = [σа(Т) – σс(Т)]/σс(Т) below 50—70 K is positive whereas above 220 K its sign changes to negative due to a specific combination of the temperature dependences of carrier concentration and mobility. It has been shown that the negative sign of relative MR (negative magnetoresistive effect) dominates at T < 25 K and B < 6 T and is presumably caused by the effects of strong localization resulting from structural disorder. The positive MR sign (positive magnetoresistive effect) is associated with the Lorentz mechanism of carrier movement and exhibits itself above 25 K in 6–8 T magnetic fields.

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