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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mateltech</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений. Материалы электронной техники</journal-title><trans-title-group xml:lang="en"><trans-title>Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1609-3577</issn><issn pub-type="epub">2413-6387</issn><publisher><publisher-name>MISIS</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17073/1609-3577-2022-1-23-38</article-id><article-id custom-type="elpub" pub-id-type="custom">mateltech-461</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Материаловедение и технология. Полупроводники</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MATERIALS SCIENCE AND TECHNOLOGY. SEMICONDUCTORS</subject></subj-group></article-categories><title-group><article-title>Новый этап развития рынка поликристаллического кремния</article-title><trans-title-group xml:lang="en"><trans-title>The modern phase of the polysilicon market</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-6081-8304</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Наумов</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Naumov</surname><given-names>A. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>ул. Парковая, д. 1, Лыткарино, Московская область, 140080</p><p>Наумов Аркадий Валерьевич — руководитель направления</p></bio><bio xml:lang="en"><p>1 Parkovaya Str., Lytkarino, Moscow Region 140080</p><p>Arkady V. Naumov — Head of Development</p></bio><email xlink:type="simple">naumov_arkadii@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Орехов</surname><given-names>Д. Л.</given-names></name><name name-style="western" xml:lang="en"><surname>Orehov</surname><given-names>D. L.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Политехническая ул., д. 28, Санкт-Петербург, 194021</p><p>Орехов Дмитрий Львович — канд. техн. наук, генеральный директор</p></bio><bio xml:lang="en"><p>28 Politekhnicheskaya Str., St. Petersburg, 194021</p><p>Dmitry L. Orehov — Cand. Sci. (Eng.), General Director</p></bio><email xlink:type="simple">d.orehov@hevelsolar.com</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>АО «ОКБ «Астрон»</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Astrohn Technology Ltd.</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>ООО «НТЦ «Тонкопленочных технологий в энергетике»</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Research and Development Center for Thin-Film Technologies in Energetics</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2022</year></pub-date><pub-date pub-type="epub"><day>14</day><month>04</month><year>2022</year></pub-date><volume>25</volume><issue>1</issue><fpage>23</fpage><lpage>38</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Наумов А.В., Орехов Д.Л., 2022</copyright-statement><copyright-year>2022</copyright-year><copyright-holder xml:lang="ru">Наумов А.В., Орехов Д.Л.</copyright-holder><copyright-holder xml:lang="en">Naumov A.V., Orehov D.L.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://met.misis.ru/jour/article/view/461">https://met.misis.ru/jour/article/view/461</self-uri><abstract><p>Рассмотрено текущее состояние и перспективы развития мирового рынка полупроводникового поликристаллического кремния (ПКК). Отмечено, что после долгого периода низких цен на ПКК, что препятствовало росту инвестиций в отрасль, наступает период выравнивания цен до уровня инвестиционной привлекательности. Приведены оценки баланса спроса и предложения до 2024 г. и в долгосрочной перспективе. Проанализированы основные технологические схемы получения ПКК в современных условиях. Отмечено, что некоторый профицит рынка ПКК сохранится в ближайшей и среднесрочной перспективе. Однако провозглашенный всеми правительствами «зеленый поворот» в энергетике, развитие локальных рынков и восстановление цен до инвестиционно-привлекательного уровня, способствовали появлению новых проектов заводов по производству ПКК. Важным для России является вопрос выбора технологических особенностей реализации метода Сименс-ТХС. Особенность ситуации в России — это наличии нескольких крайне важных рынков (солнечной энергетики, микроэлектроники, силовой электроники, фотоники, волоконной оптики), которые являются по мировым меркам незначительными и в равной мере испытывающими нехватку собственного сырья. Для России, по-видимому, особенную ценность могут представлять комплексные проекты, которые позволят одновременно решить несколько проблем сырьевого обеспечения.</p></abstract><trans-abstract xml:lang="en"><p>The current condition and outlooks of the world semiconductor and polycrystalline silicon (poly-Si) markets have been analyzed. A long period of low PS prices which hindered the growth of investments into the industry has now changed for price recovery to an investment attractive level. Demand and offer balance for the period until 2024 and for the long term has been analyzed, and the main currently used PS processes have been reviewed. The current poly-Si market proficiency is expected to remain in the near and medium terms. However the “green turn” of the energy industry announced by all the governments, the development of local markets and the price recovery to an investment attractive level have promoted the development of new PS fab projects. Of special importance for Russia is the choice of Siemens trichlorosilane process parameters. A specific feature of the Russian market is the presence of several very important fields (solar energy, microelectronics, high-power electronics, photonics and fiber optics) which are small by international standards and equally face raw material shortage. It appears that Russia will greatly benefit from integral projects delivering solutions of multiple raw materials supply problems.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>солнечная энергетика</kwd><kwd>поликремний</kwd><kwd>перепроизводство</kwd><kwd>Сименс-метод</kwd><kwd>метод «кипящего слоя»</kwd><kwd>спрос</kwd><kwd>предложение</kwd><kwd>баланс</kwd><kwd>цены и ценообразование</kwd></kwd-group><kwd-group xml:lang="en"><kwd>solar energy</kwd><kwd>polycrystalline silicon</kwd><kwd>overproduction</kwd><kwd>Siemens process</kwd><kwd>fluidized bed process</kwd><kwd>demand</kwd><kwd>offer</kwd><kwd>balance</kwd><kwd>price</kwd><kwd>pricing</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Авторы выражают благодарность Рязанцеву В.В. за помощь при описании технологии получения синтетического кварца.</funding-statement><funding-statement xml:lang="en">The Authors are grateful to V.V. 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