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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mateltech</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений. Материалы электронной техники</journal-title><trans-title-group xml:lang="en"><trans-title>Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1609-3577</issn><issn pub-type="epub">2413-6387</issn><publisher><publisher-name>MISIS</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17073/1609-3577-2022-4-271-282</article-id><article-id custom-type="edn" pub-id-type="custom">EBETRN</article-id><article-id custom-type="elpub" pub-id-type="custom">mateltech-497</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Математическое моделирование в материаловедении электронных компонентов</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MATHEMATICAL MODELING IN MATERIALS SCIENCE OF ELECTRONIC COMPONENTS</subject></subj-group></article-categories><title-group><article-title>Учет тепловыделения в малых объемах вещества на примере роста микростержней ZnO: поиск методики моделирования</article-title><trans-title-group xml:lang="en"><trans-title>Accounting for heat release in small volumes of matter on the example of the growth of ZnO micro-rods: search for a modeling technique</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-2988-8803</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Матюшкин</surname><given-names>И. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Matyushkin</surname><given-names>I. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>пл. Шокина, д. 1, Зеленоград, Москва, 124498</p><p>Матюшкин Игорь Валерьевич — канд. физ.-мат. наук, доцент кафедры проектирования и конструирования интегральных микросхем</p></bio><bio xml:lang="en"><p>1 Shokin Sq., Zelenograd, Moscow 124498</p><p>Igor V. Matyushkin — Cand. Sci. (Phys.-Math.), Associate Professor of the Department of Design and Construction of Integrated Circuits</p></bio><email xlink:type="simple">imatyushkin@niime.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-2358-3689</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Тельминов</surname><given-names>О. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Telminov</surname><given-names>O. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>ул. Акад. Валиева, д. 6, стр. 1, Зеленоград, Москва, 124460</p><p>Тельминов Олег Александрович — канд. техн. наук, начальник лаборатории нейроморфных систем</p></bio><bio xml:lang="en"><p>6-1 Acad. Valieva Str., Zelenograd, Moscow 124460</p><p>Oleg A. Telminov — Cand. Sci. (Eng.), Head of the Laboratory of Neuromorphic Systems</p></bio><email xlink:type="simple">otelminov@niime.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-5505-7352</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Михайлов</surname><given-names>А. Н.</given-names></name><name name-style="western" xml:lang="en"><surname>Mikhaylov</surname><given-names>A. N.</given-names></name></name-alternatives><bio xml:lang="ru"><p>просп. Гагарина, д. 23, Нижний Новгород, 603022</p><p>Михайлов Алексей Николаевич — канд. физ.-мат. наук, заведующий лабораторией</p></bio><bio xml:lang="en"><p>23 Gagarin Ave., Nizhny Novgorod 603022</p><p>Alexey N. Mikhaylov — Cand. Sci. (Phys.-Math.), Head of Laboratory</p></bio><email xlink:type="simple">mian@nifti.unn.ru</email><xref ref-type="aff" rid="aff-3"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Национальный исследовательский университет «МИЭТ»</institution><country>Россия</country></aff><aff xml:lang="en"><institution>National Research University of Electronic Technology</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>АО «НИИ молекулярной электроники»</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Molecular Electronics Research Institute, JSC</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Национальный исследовательский Нижегородский государственный университет им. Н.И. Лобачевского</institution><country>Россия</country></aff><aff xml:lang="en"><institution>National Research Lobachevsky State University of Nizhny Novgorod</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2022</year></pub-date><pub-date pub-type="epub"><day>10</day><month>01</month><year>2023</year></pub-date><volume>25</volume><issue>4</issue><fpage>271</fpage><lpage>282</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Матюшкин И.В., Тельминов О.А., Михайлов А.Н., 2023</copyright-statement><copyright-year>2023</copyright-year><copyright-holder xml:lang="ru">Матюшкин И.В., Тельминов О.А., Михайлов А.Н.</copyright-holder><copyright-holder xml:lang="en">Matyushkin I.V., Telminov O.A., Mikhaylov A.N.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://met.misis.ru/jour/article/view/497">https://met.misis.ru/jour/article/view/497</self-uri><abstract><p>На примерах экзотермической химической реакции и саморазогрева области проводящего филамента мемристора обсуждаются стимулированные теплотой фазовые переходы, недостатки применения в нано-масштабах классического подхода Фурье и преимущества метода молекулярной механики при моделировании температурного фактора. Предложена коррекция к закону Аррениуса, учитывающая то, что температура становится случайной величиной. На основе вводимых понятий (элементарный акт тепловыделения, радиус и регион теплового воздействия) предлагается методика учета теплового фактора.</p><p>Корректирующая поправка основана на расщеплении всего пула частиц на несколько потоков, каждый из которых соответствует фиксированному значению температуры, взятому из некоторого диапазона. Хотя приводятся непрерывный и дискретный вариант коррекции, но дискретный вариант более предпочтителен. Это связано с тем, что методика делает акцент на применении методов молекулярной механики, причем, умышленно, в самом примитивном варианте. Отмечается роль аморфизации, как примера структурной перестройки вещества в нанообъемах. Указывается, что сами фононные спектры, определяющие теплоперенос, зависят от температуры. Методика, согласуется с идеологией многомасштабного моделирования. Интегральное повышение температуры рассчитывается вне региона теплового воздействия, где значимы неравновесные эффекты, путем решения стандартного уравнения теплопроводности.</p></abstract><trans-abstract xml:lang="en"><p>Using examples of an exothermic chemical reaction and self-heating of the region of a conducting filament of a memristor, heat-induced phase transitions, disadvantages of applying the classical Fourier approach on the nanoscale, and advantages of the molecular mechanics method at modeling the temperature factor are discussed. The correction for Arrhenius relationship, taking into account that the temperature becomes a random variable is proposed. Based on the introduced concepts (elementary act of heat release, distance and region of thermal impact) method for taking into account the thermal factor, is proposed.</p><p>The correction is based on splitting the entire pool of particles into several, each of which corresponds to a fixed temperature value taken from a certain range. Although continuous and discrete correction options are given both, but the discrete option is more preferable. This is due to the fact that the methodology focuses on the application of methods of molecular mechanics, and, intentionally, in the most primitive version. The role of amorphization is noted as an example of the structural restructuring of matter in nano-volumes. It is indicated that the phonon spectra themselves, which determine heat transfer, depend on temperature. The technique is consistent with the ideology of multiscale modeling. The integral temperature increase is calculated outside the region of thermal exposure, where nonequilibrium effects are significant, by solving the standard equation of thermal conductivity.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>мемристор</kwd><kwd>экзотермическая реакция</kwd><kwd>молекулярная механика</kwd><kwd>температура</kwd><kwd>закон Аррениуса</kwd></kwd-group><kwd-group xml:lang="en"><kwd>memristor</kwd><kwd>exothermic reaction</kwd><kwd>molecular mechanics</kwd><kwd>temperature</kwd><kwd>Arrhenius relationship</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа выполнена при поддержке Минобрнауки РФ, тема АААА-А20-120110990073-7. Моделирование физических явлений в мемристивных структурах выполнено в рамках научной программы Национального центра физики и математики (проект «Искусственный интеллект и большие данные в технических, промышленных, природных и социальных системах»).</funding-statement><funding-statement xml:lang="en">The work was supported by the Ministry of Education and Science of the Russian Federation, topic АААА-А20-120110990073-7. The modeling of physical phenomena in memristive structures was carried out within the framework of the scientific program of the National Center for Physics and Mathematics (project "Artificial intelligence and big data in technical, industrial, natural and social systems").</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Stempkovsky A.L., Gavrilov S.V., Matyushkin I.V., Teplov G.S. 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