mateltechИзвестия высших учебных заведений. Материалы электронной техникиIzvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering1609-35772413-6387MISIS10.17073/1609-3577-2023-2-137-147BSJNQAmateltech-514Research ArticleФизические свойства и методы исследованияPHYSICAL CHARACTERISTICS AND THEIR STUDYИсследование аномально высокого времени релаксации фототока в диодах Шоттки на основе a-Ga2O3Nature of the abnormally high photocurrent relaxation time in the a-Ga2O3-based Schottky diodeshttps://orcid.org/0000-0001-9193-8106ЩемеровИ. В.SchemerovI. V.

Ленинский просп., д. 4, стр. 1, Москва, 119049

Щемеров Иван Васильевич — канд. техн. наук, доцент

4-1 Leninsky Ave., Moscow 119049

Ivan V. Schemerov — Cand. Sci. (Eng.), Associate Professor

schemerov.iv@misis.ruhttps://orcid.org/0000-0001-6898-6126ПоляковА. Я.PolyakovA. Yu.

Ленинский просп., д. 4, стр. 1, Москва, 119049

Поляков Александр Яковлевич — канд. техн. наук, профессор

4-1 Leninsky Ave., Moscow 119049

Alexander Yu. Polyakov — Cand. Sci. (Eng.), Professor

aypolyakov@misis.ruhttps://orcid.org/0000-0002-3502-8770АлмаевА. В.AlmaevA. V.

просп. Ленина, д. 36, Томск, 634050

Алмаев Алексей Викторович — канд. техн. наук, доцент

36 Lenin Ave., Tomsk 634050

Aleksey V. Almaev — Cand. Sci. (Eng.), Associate Professor

test@catthescientist.ruhttps://orcid.org/0000-0002-5630-0833НиколаевВ. И.NikolaevV. I.

Политехническая ул., д. 26, Санкт-Петербург, 194021

Николаев Владимир Иванович — доктор физ.-мат. наук, заведующий лабораторией

26 Politehnicheskaya Str., St. Petersburg 194021

Vladimir I. Nikolaev — Dr. Sci. (Phys.-Math.), Head of Department

test@catthescientist.ruhttps://orcid.org/0000-0002-0879-7013КобелеваС. П.KobelevaS. P.

Ленинский просп., д. 4, стр. 1, Москва, 119049

Кобелева Светлана Петровна — канд. физ.-мат. наук, доцент

4-1 Leninsky Ave., Moscow 119049

Svetlata P. Kobeleva — Cand. Sci. (Phys.-Math.), Associate Professor

kob@misis.ruhttps://orcid.org/0000-0002-4519-4852ВасильевА. А.VasilyevA. A.

Ленинский просп., д. 4, стр. 1, Москва, 119049

Васильев Антон Андреевич — аспирант

4-1 Leninsky Ave., Moscow 119049

Anton A. Vasilyev — Postgraduate Student

aavasilev@outlook.comhttps://orcid.org/0000-0002-1879-3120КириловВ. Д.KirilovV. D.

Ленинский просп., д. 4, стр. 1, Москва, 119049

Кирилов Виктор Дмитриевич — аспирант

4-1 Leninsky Ave., Moscow 119049

Viktor D. Kirilov — Postgraduate Student

saks69a@mail.ruhttps://orcid.org/0000-0003-4241-5565КочковаА. И.KochkovaA. I.

Ленинский просп., д. 4, стр. 1, Москва, 119049

Кочкова Анастасия Ильинична — инженер

4-1 Leninsky Ave., Moscow 119049

Anastasia I. Kochkova — Engineer

nas-ta-sy@mail.ruhttps://orcid.org/0000-0002-9152-7566КопьевВ. В.KopievV. V.

просп. Ленина, д. 36, Томск, 634050

Копьев Виктор Васильевич — инженер

36 Lenin Ave., Tomsk 634050

Viktor V. Kopiev — Engineer

test@catthescientist.ruКуланчиковЮ. О.KulanchikovYu. O.

Ленинский просп., д. 4, стр. 1, Москва, 119049

Куланчиков Юрий Олегович — аспирант

4-1 Leninsky Ave., Moscow 119049

Yuri O. Kulanchikov — Postgraduate Student

test@catthescientist.ruНациональный исследовательский технологический университет "МИСИС"РоссияNational University of Science and Technology “MISIS”Russian FederationНациональный исследовательский Томский государственный университетРоссияTomsk State UniversityRussian FederationФизико-технический институт им. А.Ф. Иоффе Российской академии наукРоссияIoffe Physical-Technical Institute of the Russian Academy of SciencesRussian Federation202307072023262137147Copyright © Щемеров И.В., Поляков А.Я., Алмаев А.В., Николаев В.И., Кобелева С.П., Васильев А.А., Кирилов В.Д., Кочкова А.И., Копьев В.В., Куланчиков Ю.О., 20232023Щемеров И.В., Поляков А.Я., Алмаев А.В., Николаев В.И., Кобелева С.П., Васильев А.А., Кирилов В.Д., Кочкова А.И., Копьев В.В., Куланчиков Ю.О.Schemerov I.V., Polyakov A.Y., Almaev A.V., Nikolaev V.I., Kobeleva S.P., Vasilyev A.A., Kirilov V.D., Kochkova A.I., Kopiev V.V., Kulanchikov Y.O.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://met.misis.ru/jour/article/view/514

Ga2O3 — широкозонный материал с рядом уникальных характеристик, которые делают его перспективным материалом фотоники: он оптически прозрачен для оптического и ближнего ультрафиолетового излучения, обладает высокими значениями пробивных напряжений и высокой радиационной стойкостью. Одним из недостатков, которые в настоящее время препятствуют использованию данного материала в солнечно-слепых фотодетекторах, является аномально большое время нарастания и спада фотопроводимости, которое может достигать сотен секунд. Такая «замедленная» фотопроводимость существенно ограничивает область применения этих материалов. Проведены исследования природы этого эффекта. Выполнены измерения времени нарастания и спада фотоиндуцированного тока в диодах Шотки на основе α-Ga2O3, выращенных методом HVPE на сапфире, при засветке светодиодами с длиной волны 259 и 530 нм. При засветке ультрафиолетовым излучением рост тока через фоточувствительную структуру из двух встречных диодов происходил в три этапа: достаточно быстрое нарастание с характерным временем 70 мс, медленный рост с характерным временем 40 с и затянутый спад с характерным временем порядка 300 с. При последующей засветке излучением зеленого цвета рост тока с характерным временем 130 мс и 40 с накладывался на стимулируемый засветкой медленный спад амплитуды максимального тока с характерным временем порядка 1500 с. Анализ релаксации тока показал наличие глубоких центров с энергией (EC – 0,17 эВ). Существенное замедление релаксации фотоиндуцированного тока можно связать с флуктуациями потенциала вблизи барьера Шотки.

Ga2O3 is an ultra-wideband material with excellent optical characteristics. It is a promising material for power applications and optoelectronics because of its high electrical breakdown voltage and radiation hardness. It is optically transparent for visible light and UVA but UVC-sensitive. One of the main disadvantages of this material is the anomalous slow photoeffect: photoconductivity rise and decay characteristic times can be more than hundreds of seconds long. This "slow" photoconductivity effect severely limits the utilisation of the Ga2O3-based devices. The aim of this work is the investigation of the nature of this effect. The results of the photoinduced current rise and decay under 530 nm and 259 nm LED are measured in the HVPE-grown α-Ga2O3-based Schottky diode. Upon UV-illumination the photocurrent rise consists of three parallel processes: fast signal growth, slow growth and very slow decay with characteristic times near 70 ms, 40 s and 300 s respectively. Subsequent 530 nm LED illumination resulted in photoinduced current rise consisting of two mechanisms with characterisatic times 130 ms and 40 s on which a very slow decrease of the photocurrent amplitude with characteristic time of 1500 s was superimposed. 530 nm illumination stimulates this process. Protoinduced current relaxation analysis shows the presence of the deep levels with energies (EC - 0.17 eV). It is suggested that extremely slow relaxations can be associated with potential fluctuations near the Schottky barrier.

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Journal of Applied Physics. 2022; 131(21): 215701. https://doi.org/10.1063/5.0090832Polyakov A.Y., Nikolaev V.I., Tarelkin S.A., Pechnikov A.I., Stepanov S.I., Nikolaev A.E., Shchemerov I.V., Yakimov E.B., Luparev N.V., Kuznetsov M.S., Vasilev A.A., Kochkova A.I., Voronova M.I., Scheglov M.P., Kim J., Pearton S.J. Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates. Journal of Applied Physics. 2021; 129(18): 185701. https://doi.org/10.1063/5.0044531Polyakov A.Y., Nikolaev V.I., Tarelkin S.A., Pechnikov A.I., Stepanov S.I., Nikolaev A.E., Shchemerov I.V., Yakimov E.B., Luparev N.V., Kuznetsov M.S., Vasilev A.A., Kochkova A.I., Voronova M.I., Scheglov M.P., Kim J., Pearton S.J. Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates. Journal of Applied Physics. 2021; 129(18): 185701. https://doi.org/10.1063/5.0044531Polyakov A.Y., Nikolaev V.I., Stepanov S.I., Pechnikov A.I., Yakimov E.B., Smirnov N.B., Shchemerov I.V., Vasilev A.A., Kochkova A.I., Chernykh A.V., Pearton S.J. Editors’ choice — electrical properties and deep traps in α-Ga2O3:Sn films grown on sapphire by halide vapor phase epitaxy. ECS Journal of Solid State Science and Technology. 2020; 9(4): 045003. https://doi.org/10.1149/2162-8777/ab89bbPolyakov A.Y., Nikolaev V.I., Stepanov S.I., Pechnikov A.I., Yakimov E.B., Smirnov N.B., Shchemerov I.V., Vasilev A.A., Kochkova A.I., Chernykh A.V., Pearton S.J. Editors’ choice — electrical properties and deep traps in α-Ga2O3:Sn films grown on sapphire by halide vapor phase epitaxy. ECS Journal of Solid State Science and Technology. 2020; 9(4): 045003. https://doi.org/10.1149/2162-8777/ab89bbKim J., Pearton S.J., Fares C., Yang J., Ren F., Kim S., Polyakov A.Y. 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The authors declare that there are no conflicts of interest present.