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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mateltech</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений. Материалы электронной техники</journal-title><trans-title-group xml:lang="en"><trans-title>Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1609-3577</issn><issn pub-type="epub">2413-6387</issn><publisher><publisher-name>MISIS</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17073/1609-3577j.met202305.528</article-id><article-id custom-type="elpub" pub-id-type="custom">mateltech-528</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Наноматериалы и нанотехнологии</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>NANOMATERIALS AND NANOTECHNOLOGY</subject></subj-group></article-categories><title-group><article-title>Состояние и перспективы развития мобильных источников тока</article-title><trans-title-group xml:lang="en"><trans-title>Status and prospects for the development of mobile power sources</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-1171-336X</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Слепцов</surname><given-names>В. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Sleptsov</surname><given-names>V. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Волоколамское ш., д. 4, Москва, 125993</p><p>Слепцов Владимир Владимирович — доктор техн. наук, профессор, зав кафедрой радиоэлектроники, телекоммуникаций и нанотехнологий</p></bio><bio xml:lang="en"><p>4 Volokolamskoe Highway, Moscow 125993</p><p>Vladimir V. Sleptsov — Dr. Sci. (Eng.), Professor, Head of the Department of Radio Electronics, Telecommunications and Nanotechnology</p></bio><email xlink:type="simple">08fraktal@inbox.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-4973-1328</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Кожитов</surname><given-names>Л. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Kozhitov</surname><given-names>L. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ленинский просп., д. 4, стр. 1, Москва, 119049</p><p>Кожитов Лев Васильевич — доктор техн. наук, профессор, профессор кафедры технологии материалов электроники</p></bio><bio xml:lang="en"><p>4-1 Leninsky Ave., Moscow 119049</p><p>Lev V. Kozhitov — Dr. Sci. (Eng.), Professor, Professor of the Department of Technology of Materials of Electronics</p></bio><email xlink:type="simple">kozitov@misis.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-0819-6517</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Дителева</surname><given-names>А. О.</given-names></name><name name-style="western" xml:lang="en"><surname>Diteleva</surname><given-names>A. O.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Волоколамское ш., д. 4, Москва, 125993</p><p>Дителева Анна Олеговна — старший преподаватель, кафедра радиоэлектроники, телекоммуникаций и нанотехнологий</p></bio><bio xml:lang="en"><p>4 Volokolamskoe Highway, Moscow 125993</p><p>Anna O. Diteleva — Senior Lecturer, Department of Radio Electronics, Telecommunications and Nanotechnology</p></bio><email xlink:type="simple">anna.diteleva@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-6968-1495</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Кукушкин</surname><given-names>Д. Ю.</given-names></name><name name-style="western" xml:lang="en"><surname>Kukushkin</surname><given-names>D. Yu.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Волоколамское ш., д. 4, Москва, 125993</p><p>Кукушкин Дмитрий Юрьевич — канд. техн. наук, доцент, кафедра радиоэлектроники, телекоммуникаций и нанотехнологий</p></bio><bio xml:lang="en"><p>4 Volokolamskoe Highway, Moscow 125993</p><p>Dmitry Yu. Kukushkin — Cand. Sci. (Eng.), Associate Professor, Department of Radio Electronics, Telecommunications and Nanotechnology</p></bio><email xlink:type="simple">Skyline34@nxt.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-4657-9305</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Попкова</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Popkova</surname><given-names>A. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>ул. Железнодорожная, д. 24, Подольск, 142103</p><p>Попкова Алёна Васильевна — старший научный сотрудник</p></bio><bio xml:lang="en"><p>24 Zheleznodorozhnaya Str., Podolsk 142103</p><p>Alena V. Popkova — Senior Researcher</p></bio><email xlink:type="simple">popkova-alena@rambler.ru</email><xref ref-type="aff" rid="aff-3"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Московский авиационный институт</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Moscow Aviation Institute</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Национальный исследовательский технологический университет «МИСИС»</institution><country>Россия</country></aff><aff xml:lang="en"><institution>National University of Science and Technology “MISIS”</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>АО «НИИ НПО «ЛУЧ»</institution><country>Россия</country></aff><aff xml:lang="en"><institution>JSC “Research Institute NPO” LUCH”</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2023</year></pub-date><pub-date pub-type="epub"><day>04</day><month>09</month><year>2023</year></pub-date><volume>26</volume><issue>3</issue><fpage>217</fpage><lpage>233</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Слепцов В.В., Кожитов Л.В., Дителева А.О., Кукушкин Д.Ю., Попкова А.В., 2023</copyright-statement><copyright-year>2023</copyright-year><copyright-holder xml:lang="ru">Слепцов В.В., Кожитов Л.В., Дителева А.О., Кукушкин Д.Ю., Попкова А.В.</copyright-holder><copyright-holder xml:lang="en">Sleptsov V.V., Kozhitov L.V., Diteleva A.O., Kukushkin D.Y., Popkova A.V.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://met.misis.ru/jour/article/view/528">https://met.misis.ru/jour/article/view/528</self-uri><abstract><p>Разработаны физико-химические основы базовых конструкций и технологий производства перспективных электролитических ячеек для накопления электрической энергии с удельной энергоемкостью для многоразовых ячеек — 350—500 Вт ⋅ ч/кг на первом этапе и 1000 Вт ⋅ ч/кг на втором. Наряду с традиционными химическими источниками тока и ионисторами появляются сверхъемкие конденсаторные структуры с тонким диэлектриком в двойном электрическом слое и гибридные конденсаторы, в которых энергия накапливается как в двойном электрическом слое, так и за счет протекания электрохимических процессов. Такой подход позволяет снизить внутреннее сопротивление электролитических ячеек, что приводит к уменьшению тепловыделения в процессе работы и, соответственно увеличению удельной энергоемкости, безопасности эксплуатации, снижению времени зарядки, а также обеспечению роста удельной мощности. Перспективным анодом является наноструктурированный электродный материал, который представляет собой матрицу на основе углерода, заполненную наноструктурированным химически активным материалом. Перспективными материалами для заполнения углеродной матрицы являются Li и его сплавы, Si, Al, Na, Sn, Mg, Zn, Ni, Co, Ag, а также ряд других материалов и их соединений. Исследовано влияние на удельную энергоемкость удельной площади углеродного материала, диэлектрической проницаемости, добавления химически активного вещества. Рассчитаны теоретические значения удельной энергоемкости гибридных конденсаторов с металл-воздушной системой. Разработан тонкопленочный технологический комплекс, обеспечивающий создание нового поколения электродных материалов, конструкция которых представляет собой углеродную матрицу с высокоразвитой поверхностью, в которой находится туннельнотонкий диэлектрик, на поверхности которого размещен химически активный материал.</p></abstract><trans-abstract xml:lang="en"><p>The physicochemical foundations of the basic structures and technologies for the production of promising electrolytic cells for the accumulation of electrical energy with a specific energy intensity for reusable cells of 350–500 W  ⋅ h/kg at the first stage and 1000 W  ⋅ h/kg at the second stage have been developed. Along with traditional chemical current sources and ionistors, supercapacitive capacitor structures with a thin dielectric in a double electric layer and hybrid capacitors appear, in which energy is accumulated both in a double electric layer and due to electrochemical processes. This approach makes it possible to reduce the internal resistance of electrolytic cells, which leads to a decrease in heat generation during operation and, accordingly, an increase in specific energy consumption, operational safety, a decrease in charging time, and an increase in specific power. A promising anode is a nanostructured electrode material, which is a carbon-based matrix filled with a nanostructured reactive material. Promising materials for filling the carbon matrix are Li and its alloys, Si, Al, Na, Sn, Mg, Zn, Ni, Co, Ag, and a number of other materials and their compounds. The influence of the specific area of the carbon material, dielectric constant, addition of a chemically active substance on the specific energy consumption has been studied. The theoretical values of the specific energy capacity of hybrid capacitors with a metal-air system are calculated. A thin-film technological complex has been developed that ensures the creation of a new generation of electrode materials, the design of which is a carbon matrix with a highly developed surface, in which there is a tunnel-thin dielectric, on the surface of which a chemically active material is placed.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>гибридный конденсатор</kwd><kwd>источники тока</kwd><kwd>накопители энергии</kwd><kwd>углеродный материал</kwd><kwd>электродные материалы</kwd><kwd>наноструктурирование</kwd><kwd>наночастицы</kwd><kwd>углеродная матрица</kwd><kwd>химический активный материал</kwd></kwd-group><kwd-group xml:lang="en"><kwd>hybrid capacitor</kwd><kwd>current sources</kwd><kwd>energy storage devices</kwd><kwd>carbon material</kwd><kwd>electrode materials</kwd><kwd>nanostructuring</kwd><kwd>nanoparticles</kwd><kwd>carbon matrix</kwd><kwd>chemically active material</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа выполнена в рамках государственного задания Минобрнауки России, номер темы FSFF-2023-0008.</funding-statement><funding-statement xml:lang="en">The work was carried out within the framework of the state task of the Ministry of Education and Science of Russia, No. FSFF-2023-0008.</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Склезнев А.А. 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