mateltechИзвестия высших учебных заведений. Материалы электронной техникиIzvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering1609-35772413-6387MISIS10.17073/1609-3577j.met202305.529mateltech-529Research ArticleФизические свойства и методы исследованияPHYSICAL CHARACTERISTICS AND THEIR STUDYБарьеры для инжекции электронов и дырок из подложки кремния в ВЧ-магнетронно напыленные пленки In2O3 : ErThe barriers for electron and hole injection from Si substrate into the RF magnetron-deposited In2O3 : Er filmshttps://orcid.org/0000-0002-6598-9433ФеклистовК. В.FeklistovK. V.

пpосп. Акад. Лавpентьева, д. 13, Новосибирск, 630090;

ул. Ученых, д. 9, Новосибирск, 630090

Феклистов Константин Викторович — канд. физ.-мат. наук, младший научный сотрудник

13 Acad. Lavrentieva Ave., Novosibirsk 630090;

9 Uchenykh Str., Novosibirsk 630090

Konstantin V. Feklistov — Cand. Sci. (Phys.-Math.), Junior Researcher

kofeklistov@yandex.ruhttps://orcid.org/0000-0001-5680-9819ЛемзяковА. Г.LemzyakovA. G.

пpосп. Акад. Лавpентьева, д. 11, Новосибирск, 630090

Лемзяков Алексей Георгиевич — научный сотрудник

11 Acad. Lavrentieva Ave., Novosibirsk 630090

Aleksey G. Lemzyakov — Researcher

a.g.lemzyakov@inp.nsk.suhttps://orcid.org/0000-0001-7271-3921ШкляевА. А.ShklyaevA. A.

пpосп. Акад. Лавpентьева, д. 13, Новосибирск, 630090;

ул. Пирогова, д. 2, Новосибирск, 630090

Шкляев Александр Андреевич — доктор физ.-мат. наук, главный научный сотрудник

13 Acad. Lavrentieva Ave., Novosibirsk 630090;

1 Pirogova Str., Novosibirsk 630090

Alexander A. Shklyaev — Dr. Sci. (Phys.-Math.), Chief Researcher

alexsan@mail.ruhttps://orcid.org/0000-0001-7859-1590ПротасовД. Ю.ProtasovD. Yu.

пpосп. Акад. Лавpентьева, д. 13, Новосибирск, 630090;

просп. Карла Маркса, д. 20, Новосибирск, 630073

Протасов Дмитрий Юрьевич — канд. физ.-мат. наук, старший научный сотрудник

13 Acad. Lavrentieva Ave., Novosibirsk 630090;

20 Karla Marksa Ave., Novosibirsk 630073

Dmitry Yu. Protasov — Cand. Sci. (Phys.-Math.), Senior Researcher

protasov@isp.nsc.ruhttps://orcid.org/0000-0001-5868-1484ДерябинА. С.DeryabinA. S.

пpосп. Акад. Лавpентьева, д. 13, Новосибирск, 630090

Дерябин Александр Сергеевич — младший научный сотрудник

13 Acad. Lavrentieva Ave., Novosibirsk 630090

Alexander S. Deryabin — Junior Researcher

das@isp.nsc.ruhttps://orcid.org/0000-0001-7485-7566СпесивцевЕ. В.SpesivsevE. V.

пpосп. Акад. Лавpентьева, д. 13, Новосибирск, 630090

Спесивцев Евгений Васильевич — канд. техн. наук, старший научный сотрудник

13 Acad. Lavrentieva Ave., Novosibirsk 630090

Evgeny V. Spesivsev — Cand. Sci. (Eng.), Senior Researcher

evs@isp.nsc.ruhttps://orcid.org/0000-0002-4269-0228ГуляевД. В.GulyaevD. V.

пpосп. Акад. Лавpентьева, д. 13, Новосибирск, 630090

Гуляев Дмитрий Владимирович — канд. физ.-мат. наук, старший научный сотрудник

13 Acad. Lavrentieva Ave., Novosibirsk 630090

Dmitry V. Gulyaev — Cand. Sci. (Phys.-Math.), Senior Researcher

gulyaev@isp.nsc.ruПугачевА. М.PugachevA. M.

просп. Акад. Коптюга, д. 1, Новосибирск, 630090

Пугачев Алексей Маркович — канд. физ.-мат. наук, старший научный сотрудник

1 Acad. Koptyug Ave., Novosibirsk 630090

Alexey M. Pugachev — Cand. Sci. (Phys.-Math.), Senior Researcher

apg@iae.nsk.suЕсаевД. Г.EsaevD. G.

пpосп. Акад. Лавpентьева, д. 13, Новосибирск, 630090

Есаев Дмитрий Георгиевич — канд. физ.-мат. наук, заведующий лабораторией

13 Acad. Lavrentieva Ave., Novosibirsk 630090

Dmitriy G. Esaev — Cand. Sci. (Phys.-Math.), Head of Laboratory

esaev@isp.nsc.ruИнститут физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наук; ООО«АИР»РоссияRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences; Academ Infrared LLCRussian FederationИнститут ядерной физики имени Г.И. Будкера Сибирского отделения Российской академии наукРоссияBudker Institute of Nuclear Physics, Siberian Branch of the Russian Academy of SciencesRussian FederationИнститут физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наук; Новосибирский государственный университетРоссияRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences; Novosibirsk State UniversityRussian FederationИнститут физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наук; Новосибирский государственный технический университетРоссияRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences; Novosibirsk State Technical UniversityRussian FederationИнститут физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наукРоссияRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of SciencesRussian FederationИнститут автоматики и электрометрии Сибирского отделения Российской академии наукРоссияInstitute of Automation and Electrometry, Siberian Branch of the Russian Academy of SciencesRussian Federation202309092023263234247Copyright © Феклистов К.В., Лемзяков А.Г., Шкляев А.А., Протасов Д.Ю., Дерябин А.С., Спесивцев Е.В., Гуляев Д.В., Пугачев А.М., Есаев Д.Г., 20232023Феклистов К.В., Лемзяков А.Г., Шкляев А.А., Протасов Д.Ю., Дерябин А.С., Спесивцев Е.В., Гуляев Д.В., Пугачев А.М., Есаев Д.Г.Feklistov K.V., Lemzyakov A.G., Shklyaev A.A., Protasov D.Y., Deryabin A.S., Spesivsev E.V., Gulyaev D.V., Pugachev A.M., Esaev D.G.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://met.misis.ru/jour/article/view/529

Пленки In2O3 : Er были напылены на подложки кремния с помощью ВЧ-магнетронного распыления-осаждения. Для подложек кремния как n-, так и p-типа проводимости токи через полученные МОП-структуры (Si/In2O3 : Er/In-контакт) были описаны в рамках модели термоэмиссии основных носителей через барьер с коррекцией приложенного напряжения на потенциал, падающий в кремнии. С помощью измерения температурной зависимости прямых токов при малом, подбарьерном смещении были найдены барьеры для инжекции электронов и дырок из кремния в пленки, равные 0,14 и 0,3 эВ, соответственно. Полученный невысокий барьер для дырок объясняется наличием плотности дефектных состояний, которые простираются от края зоны валентности в запрещенную зону In2O3 : Er и создают там канал проводимости для дырок. Наличие плотности дефектных состояний в запрещенной зоне In2O3 : Er подтверждается данными фотолюминесценции в соответствующем интервале энергий 1,55—3,0 эВ. Выполнен анализ зонной структура гетероперехода Si/In2O3 : Er. На его основе установлен энергетический интервал между электронами в зоне проводимости In2O3 : Er и дырками в канале проводимости в запрещенной зоне, равный 1,56 эВ. 

The In2O3 : Er films were deposited on Si substrates by the RF magnetron sputtering technique. For the Si substrates of both n- and p-type the current through the MOS-structure (Si/In2O3 : Er/In-contact) was described by the thermionic emission of the main currents over the barrier, with the correction of the applied voltage into the partial voltage drop in silicon. By the temperature dependence measurements of the forward currents at small under-barrier biases the barriers for the current injection from Si into the films were found equal to the 0.14 eV and 0.3 eV for the electrons and holes accordingly. The obtained small barrier for the holes is described by the presence of the defect state density. It tails from the valence band maximum into the In2O3 : Er band gap and provides there the conduction channel for holes. The defect state density in the In2O3 : Er band gap is proved by the PL data in the respective energy range 1.55–3 eV. The band analysis for the hetero-structure Si/In2O3 : Er is performed. It gives the energy gap between the electrons in the In2O3 : Er conduction band and the holes in the band gap channel equal to the 1.56 eV.

кремнийоксид индияэрбийтонкие пленкигетеропереходзонная структураразрыв зонбарьеринжекциятермоэмиссияэлектроныдыркиsiliconindium oxideerbiumthin filmsheterojunctionband structureband discontinuitybarrierinjectionthermoemissionelectronsholesОптические измерения выполнены в рамках гос. задания FWGW-2022-00005. Работа выполнена при финансовой поддержке ФСИ (грант 4235ГС1/70543 от 27.10.2021), а также при поддержке Министерства науки и высшего образования Российской Федерации (проект № 075-15-2020-797 (13.1902.21.0024)). Электрические измерения выполнены с использованием оборудования ЦКП «ВТАН» НГУ. Оптические измерения были частично выполнены на оборудовании ЦКП «Высокоразрешающая спектроскопия газов и конденсированных сред» ИАиЭ СО РАН. Напыление пленок выполнено в ЦКП «СЦСТИ» на базе УНУ «Комплекс ВЭПП-4 – ВЭПП-2000» в ИЯФ СО РАН. Мишень для напыления была изготовлена Phildal Holding Co., Ltd., Китай. Авторы благодарят Э.Д. Жанаева и Н.В. Дудченко за химическую обработку и термообработку образцов.Optical measurements were conducted under State Assignment FWGW-2022-00005. The work was financially supported by the FSI (Grant 4235GS1/70543 as of 27.10.2021) and by the Ministry of Science and Higher Education of the Russian Federation (Project No. 075-15-2020-797 (13.1902.21.0024)). Electrical measurements were carried out on facilities of the VTAN Joint Use Center of the Novosibirsk State University. Part of optical measurements were conducted on equipment of the Joint Use Center for High-Resolution Spectroscopy of Gases and Condensed Media of the Institute of Automation and Electrometry, Siberian Branch of the Russian Academy of Sciences. Films were deposited at the Siberian Center for Synchrotron and Terahertz Radiation Joint Use Center on the VEPP-4 – VEPP-2000 Complex Unique Research Installation of the Institute of Nuclear Physics, Siberian Branch of the Russian Academy of Sciences. 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The authors declare that there are no conflicts of interest present.