<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "JATS-journalpublishing1-3.dtd">
<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mateltech</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений. Материалы электронной техники</journal-title><trans-title-group xml:lang="en"><trans-title>Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1609-3577</issn><issn pub-type="epub">2413-6387</issn><publisher><publisher-name>MISIS</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17073/1609-3577j.met202303.538</article-id><article-id custom-type="elpub" pub-id-type="custom">mateltech-538</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Математическое моделирование в материаловедении электронных компонентов</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MATHEMATICAL MODELING IN MATERIALS SCIENCE OF ELECTRONIC COMPONENTS</subject></subj-group></article-categories><title-group><article-title>Принципиально новые подходы к решению теплофизических задач применительно к наноэлектронике</article-title><trans-title-group xml:lang="en"><trans-title>Fundamentally new approaches to solving thermophysical problems in the field of nanoelectronics</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-7267-0930</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Хвесюк</surname><given-names>В. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Khvesyuk</surname><given-names>V. I.</given-names></name></name-alternatives><bio xml:lang="ru"><p>2-я Бауманская ул., д. 5, стр. 1, Москва, 105005</p><p>Хвесюк Владимир Иванович — доктор техн. наук, профессор, профессор кафедры теплофизики</p></bio><bio xml:lang="en"><p>5-1 2-ya Baumanskaya Str., Moscow 105005</p><p>Vladimir I. Khvesyuk — Dr. Sci. (Eng.), Professor of the Department of Thermophysics</p></bio><email xlink:type="simple">khvesyuk@bmstu.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-6607-1536</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Баринов</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Barinov</surname><given-names>A. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>2-я Бауманская ул., д. 5, стр. 1, Москва, 105005</p><p>Баринов Александр Алексеевич — канд. техн. наук, доцент кафедры теплофизики</p></bio><bio xml:lang="en"><p>5-1 2-ya Baumanskaya Str., Moscow 105005</p><p>Alexander A. Barinov — Cand. Sci. (Eng.), Associate Professor of the Department of Thermal Physics</p></bio><email xlink:type="simple">barinov@bmstu.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Лю</surname><given-names>Б.</given-names></name><name name-style="western" xml:lang="en"><surname>Liu</surname><given-names>B.</given-names></name></name-alternatives><bio xml:lang="ru"><p>район Хайдянь, Пекин, 100084, Китай</p><p>Лю Бинь — канд. техн. наук, ассистент исследователя в ведущей лаборатории теплотехники и энергетики при министерстве образования и центра гибких электронных технологий</p></bio><bio xml:lang="en"><p>Haidian District, Beijing 100084</p><p>Bin Liu — Cand. Sci. (Eng.), Research Assistant of Key Laboratory for Thermal Science and Power Engineering of Ministry of Education and Center for Flexible Electronics Technology</p></bio><email xlink:type="simple">liubinbmstu@gmail.com</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Цяо</surname><given-names>В.</given-names></name><name name-style="western" xml:lang="en"><surname>Qiao</surname><given-names>W.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Восточный Чанъань, № 401, Сиань, 710100, Китай</p><p>Цяо Вэньпей — канд. техн. наук, ведущий инженер научно-исследовательского центра «LONGi»</p></bio><bio xml:lang="en"><p>401 East Chang’an Str., Xi’an 710100</p><p>Wenpei Qiao — Cand. Sci. (Eng.), Chief Engineer of R&amp;D Center</p></bio><email xlink:type="simple">qiaowenpei@longi.com</email><xref ref-type="aff" rid="aff-3"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Московский государственный технический университет имени Н.Э. Баумана (национальный исследовательский университет)</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Bauman Moscow State Technical University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Университет Цинхуа</institution><country>Китай</country></aff><aff xml:lang="en"><institution>Tsinghua University</institution><country>China</country></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Компания «Технологии зеленой энергетики LONGi»</institution><country>Китай</country></aff><aff xml:lang="en"><institution>LONGi Green Energy Technology Co., Ltd.</institution><country>China</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2023</year></pub-date><pub-date pub-type="epub"><day>01</day><month>09</month><year>2023</year></pub-date><volume>26</volume><issue>3</issue><fpage>190</fpage><lpage>197</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Хвесюк В.И., Баринов А.А., Лю Б., Цяо В., 2023</copyright-statement><copyright-year>2023</copyright-year><copyright-holder xml:lang="ru">Хвесюк В.И., Баринов А.А., Лю Б., Цяо В.</copyright-holder><copyright-holder xml:lang="en">Khvesyuk V.I., Barinov A.A., Liu B., Qiao W.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://met.misis.ru/jour/article/view/538">https://met.misis.ru/jour/article/view/538</self-uri><abstract><p>В настоящее время наблюдается интенсивное развитие теплофизики твердых тел, связанное с необходимостью создания моделей, обладающих высокой степенью предсказательной надежности получаемых результатов. В работе представлены новые подходы к решению ряда актуальных задач, связанных с изучением переноса тепла в полупроводниках и диэлектриках, в основном, касающихся наноструктур. Первая из рассмотренных задач — создание статистической модели процессов взаимодействия переносчиков тепла — фононов — с шероховатыми поверхностями твердых тел. В основе разработанного метода впервые применена статистика наклонов профиля случайной поверхности. Результатами расчета являются длины пробегов фононов между противоположными границами образца, которые необходимы для расчета эффективной теплопроводности в баллистическом и диффузионно-баллистическом режимах теплопереноса в зависимости от параметров шероховатости. Вторая задача — развитие методов расчета процессов переноса тепла через поверхности контакта твердых тел, имеющих различные теплофизические свойства. Удалось показать, что при учете дисперсии фононов и соответствующих ограничений на значения частот, модифицированная модель акустического несоответствия для расчета сопротивлений Капицы может быть распространена на температуры выше 300 К. Ранее пределом применимости этого метода считалась температура 30 К. Также проведено обобщение предложенного метода на случай шероховатых интерфейсов. Третья задача — новый подход к определению теплопроводности твердых тел. Авторами развит метод прямого Монте-Карло моделирования кинетики фононов со строгим учетом их взаимодействия за счет непосредственного использования законов сохранения энергии и квазиимпульса. Проведенные расчеты коэффициента теплопроводности для чистого кремния в диапазоне температур от 100 до 300 К показали хорошее согласие с экспериментом и расчетами других авторов, а также позволили в деталях рассмотреть кинетику фононов.</p></abstract><trans-abstract xml:lang="en"><p>Currently, there is a rapid development of thermophysics of solids associated with the need of creating models with a high degree of predictive reliability. This paper presents new approaches to solving relevant issues related to the study of heat transfer in semiconductors and dielectrics, mainly concerning nano-structures. The first of the considered tasks is the creation of a statistical model of the processes of interaction of heat carriers – phonons – with rough surfaces of solids. For the first time authors proposed a method based on the statistics of the slopes of the profile of a random surface. The calculation results are the mean free paths of phonon between the opposite boundaries of the sample, which are necessary for calculating the effective thermal conductivity in ballistic and diffusion-ballistic regime of heat transfer, depending on the roughness parameters. The second task is to develop methods for calculating the processes of heat transfer through the contact surfaces of solids. We were able to show that, taking into account the phonon dispersion and the corresponding restrictions on the frequency values, the modified acoustic mismatch model for calculating Kapitsa resistances can be extended to temperatures above 300 K. Previously, the limit of applicability of this method was considered to be a temperature of 30 K. Moreover, the proposed method is also generalized to the case of rough interfaces. The third task is a new approach to determining the thermal conductivity of solids. The authors have developed a method of direct Monte Carlo simulation of phonon kinetics with strict consideration of their interaction due to the direct use of the laws of conservation of energy and quasi-momentum. The calculations of the thermal conductivity coefficient for pure silicon in the temperature range from 100 to 300 K showed good agreement with the experiment and ab initio calculations of other authors, and also allowed us to consider in detail the kinetics of phonons.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>фононы</kwd><kwd>наноструктуры</kwd><kwd>эффективная теплопроводность</kwd><kwd>граничное термическое сопротивление</kwd></kwd-group><kwd-group xml:lang="en"><kwd>phonons</kwd><kwd>nanostructures</kwd><kwd>effective thermal conductivity</kwd><kwd>thermal boundary resistance</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Cahill D.G., Ford W.K., Goodson K.E., Mahan G.D., Majumdar A., Maris H.J., Merlin R., Phillpot S.R. Nanoscale thermal transport. Journal of Applied Physics. 2003; 93(2): 793—818. https://doi.org/10.1063/1.1524305</mixed-citation><mixed-citation xml:lang="en">Cahill D.G., Ford W.K., Goodson K.E., Mahan G.D., Majumdar A., Maris H.J., Merlin R., Phillpot S.R. Nanoscale thermal transport. Journal of Applied Physics. 2003; 93(2): 793—818. https://doi.org/10.1063/1.1524305</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Cahill D.G., Braun P.V., Chen G., Clarke D.R., Fan Sh., Goodson K.E., Keblinski P., King W.P., Mahan G.D., Majumdar A., Maris H.J., Phillpot S.R., Pop E., Shi Li Nanoscale thermal transport. II. 2003–2012. Applied Physics Reviews. 2014; 1(1): 011305. https://doi.org/10.1063/1.4832615</mixed-citation><mixed-citation xml:lang="en">Cahill D.G., Braun P.V., Chen G., Clarke D.R., Fan Sh., Goodson K.E., Keblinski P., King W.P., Mahan G.D., Majumdar A., Maris H.J., Phillpot S.R., Pop E., Shi Li Nanoscale thermal transport. II. 2003–2012. Applied Physics Reviews. 2014; 1(1): 011305. https://doi.org/10.1063/1.4832615</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">Khvesyuk V.I., Barinov A.A., Liu B., Qiao W. A review to the specific problems of nano thermal physics. Journal of Physics: Conference Series. 2020; 1683(2): 022073. https://doi.org/10.1088/1742-6596/1683/2/022073</mixed-citation><mixed-citation xml:lang="en">Khvesyuk V.I., Barinov A.A., Liu B., Qiao W. A review to the specific problems of nano thermal physics. Journal of Physics: Conference Series. 2020; 1683(2): 022073. https://doi.org/10.1088/1742-6596/1683/2/022073</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">Barinov A.A., Khvesyuk V.I. Statistical model of phonon scattering on rough boundaries of nanostructures. Journal of Physics: Conference Series. 2021; 2057: 012111. https://doi.org/10.1088/1742-6596/2057/1/012111</mixed-citation><mixed-citation xml:lang="en">Barinov A.A., Khvesyuk V.I. Statistical model of phonon scattering on rough boundaries of nanostructures. Journal of Physics: Conference Series. 2021; 2057: 012111. https://doi.org/10.1088/1742-6596/2057/1/012111</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">Lim J., Hippalgaonkar K., Andrews S.C., Majumdar A., Yang P. Quantifying surface roughness effects on phonon transport in silicon nanowires. Nano Letters. 2012; 12(5): 2475—2482. https://doi.org/10.1021/nl3005868</mixed-citation><mixed-citation xml:lang="en">Lim J., Hippalgaonkar K., Andrews S.C., Majumdar A., Yang P. Quantifying surface roughness effects on phonon transport in silicon nanowires. Nano Letters. 2012; 12(5): 2475—2482. https://doi.org/10.1021/nl3005868</mixed-citation></citation-alternatives></ref><ref id="cit6"><label>6</label><citation-alternatives><mixed-citation xml:lang="ru">Bass F.G., Fuks I.M. Wave scattering from statistically rough surfaces. Vol. 93. International Series in Natural Philosophy. Amsterdam: Elsevier; 2013. 540 p.</mixed-citation><mixed-citation xml:lang="en">Bass F.G., Fuks I.M. Wave scattering from statistically rough surfaces. Vol. 93. International Series in Natural Philosophy. Amsterdam: Elsevier; 2013. 540 p.</mixed-citation></citation-alternatives></ref><ref id="cit7"><label>7</label><citation-alternatives><mixed-citation xml:lang="ru">Soffer S.B. Statistical model for the size effect in electrical conduction. Journal of Applied Physics. 1967; 38(4): 1710—1715. https://doi.org/10.1063/1.1709746</mixed-citation><mixed-citation xml:lang="en">Soffer S.B. Statistical model for the size effect in electrical conduction. Journal of Applied Physics. 1967; 38(4): 1710—1715. https://doi.org/10.1063/1.1709746</mixed-citation></citation-alternatives></ref><ref id="cit8"><label>8</label><citation-alternatives><mixed-citation xml:lang="ru">Maznev A.A. Boundary scattering of phonons: Specularity of a randomly rough surface in the small-perturbation limit. Physical Review B. 2015; 91(13): 134306. https://doi.org/10.1103/PhysRevB.91.134306</mixed-citation><mixed-citation xml:lang="en">Maznev A.A. Boundary scattering of phonons: Specularity of a randomly rough surface in the small-perturbation limit. Physical Review B. 2015; 91(13): 134306. https://doi.org/10.1103/PhysRevB.91.134306</mixed-citation></citation-alternatives></ref><ref id="cit9"><label>9</label><citation-alternatives><mixed-citation xml:lang="ru">Barinov A.A., Liu B., Khvesyuk V.I., Zhang K. Updated model for thermal conductivity calculation of thin films of silicon and germanium. Physics of Atomic Nuclei. 2020; 83(10): 1538—1548. https://doi.org/10.1134/S1063778820100038</mixed-citation><mixed-citation xml:lang="en">Barinov A.A., Liu B., Khvesyuk V.I., Zhang K. Updated model for thermal conductivity calculation of thin films of silicon and germanium. Physics of Atomic Nuclei. 2020; 83(10): 1538—1548. https://doi.org/10.1134/S1063778820100038</mixed-citation></citation-alternatives></ref><ref id="cit10"><label>10</label><citation-alternatives><mixed-citation xml:lang="ru">Kapitza P.L. The study of heat transfer in helium II. Journal of Physics (USSR). 1941; 4(1-6): 181—210.</mixed-citation><mixed-citation xml:lang="en">Kapitza P.L. The study of heat transfer in helium II. Journal of Physics (USSR). 1941; 4(1-6): 181—210.</mixed-citation></citation-alternatives></ref><ref id="cit11"><label>11</label><citation-alternatives><mixed-citation xml:lang="ru">Халатников И. М. Теплообмен между твердым телом и гелием II. Журнал экспериментальной и теоретической физики. 1952; 22(6): 687—704.</mixed-citation><mixed-citation xml:lang="en">Khalatnikov I. M. Heat transfer between solids and Helium-II. Zhurnal eksperimental'noy i teoreticheskoy fiziki = Journal of Experimental and Theoretical Physics. 1952; 22(6): 687—704. (In Russ.)</mixed-citation></citation-alternatives></ref><ref id="cit12"><label>12</label><citation-alternatives><mixed-citation xml:lang="ru">Liu B., Khvesyuk V.I. Analytical model for thermal boundary conductance based on elastic wave theory. International Journal of Heat and Mass Transfer. 2020; 159: 120117. https://doi.org/10.1016/j.ijheatmasstransfer.2020.120117</mixed-citation><mixed-citation xml:lang="en">Liu B., Khvesyuk V.I. Analytical model for thermal boundary conductance based on elastic wave theory. International Journal of Heat and Mass Transfer. 2020; 159: 120117. https://doi.org/10.1016/j.ijheatmasstransfer.2020.120117</mixed-citation></citation-alternatives></ref><ref id="cit13"><label>13</label><citation-alternatives><mixed-citation xml:lang="ru">Weber W. Adiabatic bond charge model for the phonons in diamond, Si, Ge, and α-Sn. Physical Review B. 1977; 15(10): 4789—4803. https://doi.org/10.1103/PhysRevB.15.4789</mixed-citation><mixed-citation xml:lang="en">Weber W. Adiabatic bond charge model for the phonons in diamond, Si, Ge, and α-Sn. Physical Review B. 1977; 15(10): 4789—4803. https://doi.org/10.1103/PhysRevB.15.4789</mixed-citation></citation-alternatives></ref><ref id="cit14"><label>14</label><citation-alternatives><mixed-citation xml:lang="ru">Gilat G., Nicklow R.M. Normal vibrations in aluminum and derived thermodynamic properties. Physical Review. 1966; 143(2): 487—494. https://doi.org/10.1103/PhysRev.143.487</mixed-citation><mixed-citation xml:lang="en">Gilat G., Nicklow R.M. Normal vibrations in aluminum and derived thermodynamic properties. Physical Review. 1966; 143(2): 487—494. https://doi.org/10.1103/PhysRev.143.487</mixed-citation></citation-alternatives></ref><ref id="cit15"><label>15</label><citation-alternatives><mixed-citation xml:lang="ru">Minnich A.J., Johnson J.A., Schmidt A.J., Esfarjani K., Dresselhaus M.S., Nelson K.A., Chen G. Thermal conductivity spectroscopy technique to measure phonon mean free paths. Physical Review Letters. 2011; 107(9): 095901. https://doi.org/10.1103/PhysRevLett.107.095901</mixed-citation><mixed-citation xml:lang="en">Minnich A.J., Johnson J.A., Schmidt A.J., Esfarjani K., Dresselhaus M.S., Nelson K.A., Chen G. Thermal conductivity spectroscopy technique to measure phonon mean free paths. Physical Review Letters. 2011; 107(9): 095901. https://doi.org/10.1103/PhysRevLett.107.095901</mixed-citation></citation-alternatives></ref><ref id="cit16"><label>16</label><citation-alternatives><mixed-citation xml:lang="ru">Liu B., Khvesyuk V.I., Barinov A.A. The modeling of the Kapitza conductance through rough interfaces between solid bodies. Physics of the Solid State. 2021; 63(7): 1128—1133. https://doi.org/10.1134/S1063783421070155</mixed-citation><mixed-citation xml:lang="en">Liu B., Khvesyuk V.I., Barinov A.A. The modeling of the Kapitza conductance through rough interfaces between solid bodies. Physics of the Solid State. 2021; 63(7): 1128—1133. https://doi.org/10.1134/S1063783421070155</mixed-citation></citation-alternatives></ref><ref id="cit17"><label>17</label><citation-alternatives><mixed-citation xml:lang="ru">Tütüncü H.M., Srivastava G.P. Lattice dynamics of solids, surfaces, and nanostructures. Length-Scale Dependent Phonon Interactions. Topics in Applied Physics. Vol. 128. New York: Springer; 2014. 294 p. https://doi.org/10.1007/978-1-4614-8651-0_1</mixed-citation><mixed-citation xml:lang="en">Tütüncü H.M., Srivastava G.P. Lattice dynamics of solids, surfaces, and nanostructures. Length-Scale Dependent Phonon Interactions. Topics in Applied Physics. Vol. 128. New York: Springer; 2014. 294 p. https://doi.org/10.1007/978-1-4614-8651-0_1</mixed-citation></citation-alternatives></ref><ref id="cit18"><label>18</label><citation-alternatives><mixed-citation xml:lang="ru">Khvesyuk V.I., Qiao W., Barinov A.A. The effect of phonon diffusion on heat transfer. Journal of Physics: Conference Series. 2019; 1385: 012046. https://doi.org/10.1088/1742-6596/1385/1/012046</mixed-citation><mixed-citation xml:lang="en">Khvesyuk V.I., Qiao W., Barinov A.A. The effect of phonon diffusion on heat transfer. Journal of Physics: Conference Series. 2019; 1385: 012046. https://doi.org/10.1088/1742-6596/1385/1/012046</mixed-citation></citation-alternatives></ref><ref id="cit19"><label>19</label><citation-alternatives><mixed-citation xml:lang="ru">Хвесюк В.И., Цяо В., Баринов А.А. Определение теплопроводности кремния с детальным учетом кинетики взаимодействия фононов. Вестник МГТУ им. Н.Э. Баумана. Сер. Естественные науки. 2022; (3(102)): 57—68. https://doi.org/10.18698/1812-3368-2022-3-57-68</mixed-citation><mixed-citation xml:lang="en">Khvesyuk V.I., Qiao W., Barinov A.A. Kinetics of phonon interaction taken into account in determining thermal conductivity of silicon. Herald of the Bauman Moscow State Technical University, Series Natural Sciences. 2022; (3(102)): 57—68. (In Russ.). https://doi.org/10.18698/1812-3368-2022-3-57-68</mixed-citation></citation-alternatives></ref><ref id="cit20"><label>20</label><citation-alternatives><mixed-citation xml:lang="ru">Kukita K., Kamakura Y. Monte Carlo simulation of phonon transport in silicon including a realistic dispersion relation. Journal of Applied Physics. 2013; 114(15): 154312. https://doi.org/10.1063/1.4826367</mixed-citation><mixed-citation xml:lang="en">Kukita K., Kamakura Y. Monte Carlo simulation of phonon transport in silicon including a realistic dispersion relation. Journal of Applied Physics. 2013; 114(15): 154312. https://doi.org/10.1063/1.4826367</mixed-citation></citation-alternatives></ref><ref id="cit21"><label>21</label><citation-alternatives><mixed-citation xml:lang="ru">Inyushkin A.V., Taldenkov A.N., Gibin A.M., Gusev A.V., Pohl H.-J. On the isotope effect in thermal conductivity of silicon. Physica Status Solidi (C). 2004; 1(11): 2995—2998. https://doi.org/10.1002/pssc.200405341</mixed-citation><mixed-citation xml:lang="en">Inyushkin A.V., Taldenkov A.N., Gibin A.M., Gusev A.V., Pohl H.-J. On the isotope effect in thermal conductivity of silicon. Physica Status Solidi (C). 2004; 1(11): 2995—2998. https://doi.org/10.1002/pssc.200405341</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
