mateltechИзвестия высших учебных заведений. Материалы электронной техникиIzvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering1609-35772413-6387MISIS10.17073/1609-3577j.met202310.561mateltech-561Research ArticleФизические свойства и методы исследованияPHYSICAL CHARACTERISTICS AND THEIR STUDYТонкие пленки Y3Fe5O12/Ba0,8Sr0,2TiO3: синтез и перспективы интеграцииThin films Y3Fe5O12/Ba0.8Sr0.2TiO3: synthesis and integration prospectshttps://orcid.org/0000-0001-5475-8616АфанасьевМ. С.AfanasyevM. S.

пл. Введенского, д. 1, Фрязино, Московская обл., 141120

Афанасьев Михаил Сергеевич - доктор техн. наук, ведущий научный сотрудник, лаборатория № 251

1 Vvedenskogo Sq., Fryazino, Moscow Region 141120

Mikhail S. Afanasyev — Dr. Sci. (Eng.), Leading Researcher, Laboratory No. 251

gvc@ms.ire.rssi.ruГольдманЕ. И.GoldmanE. I.

пл. Введенского, д. 1, Фрязино, Московская обл., 141120

Гольдман Евгений Иосифович - канд. физ.-мат. наук, ведущий научный сотрудник, лаборатория № 251

1 Vvedenskogo Sq., Fryazino, Moscow Region 141120

Evgeniy I. Goldman — Cand. Sci. (Phys.-Math.), Leading Researcher, Laboratory No. 251

gvc@ms.ire.rssi.ruСтогнийА. И.StogniyA. I.

ул. П. Бровки, д. 19, Минск, 220072, Беларусь

Стогний Александр Иванович — канд. физ.-мат. наук

19 Petrusya Brovki Str., Minsk 220072

Alexander I. Stogniy — Cand. Sci. (Phys.-Math.)

gvc@ms.ire.rssi.ruhttps://orcid.org/0000-0002-9956-1857ЧучеваГ. В.ChuchevaG. V.

пл. Введенского, д. 1, Фрязино, Московская обл., 141120

Чучева Галина Викторовна - доктор физ.-мат. наук, главный научный сотрудник, лаборатория № 251

1 Vvedenskogo Sq., Fryazino, Moscow Region 141120

Galina V. Chucheva — Dr. Sci. (Phys.-Math.), Chief Researcher, Laboratory No. 251

gvc@ms.ire.rssi.ruИнститут радиотехники и электроники им. В.А. Котельникова Российской академии наук (фрязинский филиал)РоссияKotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences (Fryazino Branch)Russian FederationНаучно-практический центр Национальной академии наук Беларуси по материаловедениюБеларусьScientific and Practical Center of the National Academy of Sciences of Belarus for Materials ScienceBelarus20241201202427196102Copyright © Афанасьев М.С., Гольдман Е.И., Стогний А.И., Чучева Г.В., 20242024Афанасьев М.С., Гольдман Е.И., Стогний А.И., Чучева Г.В.Afanasyev M.S., Goldman E.I., Stogniy A.I., Chucheva G.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://met.misis.ru/jour/article/view/561

В статье рассмотрено получение композитной системы, состоящей из тонких ферромагнитных (Y3Fe5O12) и сегнетоэлектрических (Ba0,8Sr0,2TiO3) пленок на кремниевых подложках,полученных методом ионно-лучевого осаждения и высокочастотного распыления. Для согласования параметров кристаллических решеток и коэффициентов теплового расширения, а также предотвращения химического взаимодействия материалов пленки и подложки в работе использован буферный слой диоксида титана TiO2 (один из оксидов исходного состава мишени), параметры которого хорошо согласуются с решеткой титаната бария стронция. Исследуются состав, структура и микроструктурные свойства пленок. Показана возможность применения не только в микроэлектронике, но более всего — в микроэлектромеханике, особенно для получения сегнетоэлектрических мембран на кремнии, интегрированных в состав устройств микросистемной техники.

The work is devoted to the preparation of a composite system consisting of thin ferromagnetic films Y3Fe5O12 and ferroelectric Ba0.8Sr0.2TiO3 on silicon substrates. Films were obtained by ion-beam deposition and high-frequency sputtering. To coordinate parameters of crystal lattices and thermal expansion coefficients, as well as to prevent chemical interaction of film and substrate materials, a buffer layer of TiO2 titanium dioxide (one of oxides of the initial composition of the target) is used, parameters of which are in good agreement with the lattice of strontium barium titanate. The composition, structure and microstructural properties of films are investigated. The possibility of application is shown not only in microelectronics, but most of all in microelectromechanics, especially for the production of ferroelectric membranes on silicon integrated into the devices of microsystem technology.

сегнетоэлектрические пленкимембраныферромагнитные пленкиионно-лучевое осаждениеВЧ-распылениеатомно-силовая микроскопияэнергодисперсионная спектроскопияferroelectric filmsmembranesferromagnetic filmsion-beam depositionhigh-frequency sputteringatomic force microscopyenergy-dispersive spectroscopyИсследование выполнено за счет гранта Российского научного фонда № 22-19-00493, https://rscf.ru/project/22-19-00493/The study was carried out at the expense of the grant of the Russian Science Foundation, No. 22-19-00493, https://rscf.ru/project/22-19-00493/ReferencesСтогний А.И., Серов А.А., Корякин С.В., Паньков В.В. Газоразрядный источник ионов низкого давления с полым катодом и диаметром выходной апертуры 420 мм. Приборы и техника эксперимента. 2008; 2: 162—165.Stognii A.I., Serov A.A., Koryakin S.V., Pan’kov V.V. А low-pressure gas-discharge ion source with a hollow cathode and an output-aperture diameter of 420 mm. Instruments and Experimental Techniques. 2008; 51(2): 311—314. 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The authors declare that there are no conflicts of interest present.