mateltechИзвестия высших учебных заведений. Материалы электронной техникиIzvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering1609-35772413-6387MISIS10.17073/1609-3577j.met202310.565mateltech-565Research ArticleМатериаловедение и технология. ДиэлектрикиMATERIALS SCIENCE AND TECHNOLOGY. DIELECTRICSЭлектрофизические свойства, мемристивное и резистивное переключение в заряженных доменных стенках в ниобате литияElectrophysical properties, memristive and resistive switching in charged domain walls in lithium niobatehttps://orcid.org/0000-0001-7185-8715КислюкА. М.KislyukA. M.

Ленинский просп., д. 4, стр. 1, Москва, 119049

Кислюк Александр Михайлович — канд. физ.-мат. наук, научный сотрудник

4-1 Leninsky Ave., Moscow 119049

Alexander M. Kislyuk — Cand. Sci. (Phys.-Math.), Researcher

akislyuk94@gmail.comhttps://orcid.org/0000-0002-6569-466XКубасовИ. В.KubasovI. V.

Ленинский просп., д. 4, стр. 1, Москва, 119049

Кубасов Илья Викторович — канд. физ.-мат. наук, старший научный сотрудник

4-1 Leninsky Ave., Moscow 119049

Ilya V. Kubasov — Cand. Sci. (Phys.-Math.), Senior Researcher

kubasov.ilya@gmail.comhttps://orcid.org/0000-0003-1090-3441ТурутинА. В.TurutinA. V.

Ленинский просп., д. 4, стр. 1, Москва, 119049

Турутин Андрей Владимирович — канд. физ.-мат. наук, старший научный сотрудник

4-1 Leninsky Ave., Moscow 119049

Andrei V. Turutin — Cand. Sci. (Phys.-Math.), Senior Researcher

aturutin92@gmail.comhttps://orcid.org/0000-0001-9965-1046ТемировА. А.TemirovA. A.

Ленинский просп., д. 4, стр. 1, Москва, 119049

Темиров Александр Анатольевич — научный сотрудник

4-1 Leninsky Ave., Moscow 119049

Alexander A. Temirov — Researcher

temirov.alex@yandex.ruhttps://orcid.org/0000-0002-7658-2620ШпортенкоА. С.ShportenkoA. S.

Ленинский просп., д. 4, стр. 1, Москва, 119049

Шпортенко Андрей Сергеевич — младший научный сотрудник

4-1 Leninsky Ave., Moscow 119049

Andrey S. Shportenko — Junior Researcher

kapmah666@yandex.comhttps://orcid.org/0000-0002-9780-5686КуцВ. В.KutsV. V.

Ленинский просп., д. 4, стр. 1, Москва, 119049

Куц Виктор Викторович — младший научный сотрудник

4-1 Leninsky Ave., Moscow 119049

Viktor V. Kuts — Junior Researcher

plaguespreadvitek@gmail.comhttps://orcid.org/0000-0001-9531-6072МалинковичМ. Д.MalinkovichM. D.

Ленинский просп., д. 4, стр. 1, Москва, 119049

Малинкович Михаил Давыдовыч — канд. физ.-мат. наук, доцент

4-1 Leninsky Ave., Moscow 119049

Mikhail D. Malinkovich — Cand. Sci. (Phys.-Math.), Associate Professor

malinkovich@yandex.ruНациональный исследовательский технологический университет «МИСИС»РоссияNational University of Science and Technology “MISIS”Russian Federation2024011220232713555Copyright © Кислюк А.М., Кубасов И.В., Турутин А.В., Темиров А.А., Шпортенко А.С., Куц В.В., Малинкович М.Д., 20242024Кислюк А.М., Кубасов И.В., Турутин А.В., Темиров А.А., Шпортенко А.С., Куц В.В., Малинкович М.Д.Kislyuk A.M., Kubasov I.V., Turutin A.V., Temirov A.A., Shportenko A.S., Kuts V.V., Malinkovich M.D.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://met.misis.ru/jour/article/view/565

Заряженные доменные стенки (ЗДС) в сегнетоэлектрических материалах интересны с фундаментальной и прикладной точек зрения, так как они обладают электрофизическими свойствами, отличными от объёмных. На уровне микроструктуры ЗДС в сегнетоэлектриках представляют собой двумерные дефекты, разделяющие области материала с различающимися направлениями векторов спонтанной поляризации. Компенсация электрического поля связанного ионного заряда ЗДС подвижными носителями приводит к формированию протяженных узких каналов с повышенной проводимостью в исходно диэлектрическом материале. Управляя положением и углом наклона ЗДС по отношению к направлению спонтанной поляризации, можно изменять её проводимость в широком диапазоне, что открывает широкие перспективы для создания устройств памяти, в том числе для нейроморфных систем. В обзоре представлено современное состояние исследований в области формирования и применения ЗДС, сформированных в монокристаллах одноосного сегнетоэлектрика ниобата лития (LiNbO3, LN), в качестве устройств резистивного и мемристивного переключения. Рассмотрены основные методы формирования ЗДС в монокристаллах и тонких пленках LN, приведены современные данные по электрофизическим свойствам и способам управления электропроводностью ЗДС. Обсуждены перспективы применения ЗДС в устройствах памяти с резистивным и мемристивным переключением.

Charged domain walls (CDW) in ferroelectric materials are interesting from fundamental and applied points of view, since they have electrical properties different from bulk ones. At the microstructural level, CDW in ferroelectrics are two-dimensional defects that separate regions of the material with different directions of spontaneous polarization vectors. Compensation of the electric field of the bound ionic charge of the CDW by mobile carriers leads to the formation of extended narrow channels with increased conductivity in the original dielectric material. By controlling the position and angle of inclination of the CDW relative to the direction of spontaneous polarization, it is possible to change its conductivity in a wide range, which opens up broad prospects for creating memory devices, including for neuromorphic systems. The review presents the current state of research in the field of formation and application of CDW formed in single crystals of uniaxial ferroelectric lithium niobate (LiNbO3, LN) as resistive and memristive switching devices. The main methods for forming CDW in single crystals and thin films of LN are considered, and modern data on the electrophysical properties and methods for controlling the electrical conductivity of CDW are presented. The prospects for using CDW in memory devices with resistive and memristive switching are discussed.

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The authors declare that there are no conflicts of interest present.