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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mateltech</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений. Материалы электронной техники</journal-title><trans-title-group xml:lang="en"><trans-title>Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1609-3577</issn><issn pub-type="epub">2413-6387</issn><publisher><publisher-name>MISIS</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17073/1609-3577j.met202405.582</article-id><article-id custom-type="elpub" pub-id-type="custom">mateltech-582</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>СТАТЬИ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>ARTICLES</subject></subj-group></article-categories><title-group><article-title>Электродные материалы на основе углеродных и металлорганических каркасных структур с встроенными химически активными и функциональными элементами (обзор)</article-title><trans-title-group xml:lang="en"><trans-title>Electrode materials based on carbon and metal-organic framework structures with built-in chemically active and functional elements</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-4865-288X</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Муратов</surname><given-names>Д. Г.</given-names></name><name name-style="western" xml:lang="en"><surname>Muratov</surname><given-names>D. G.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ленинский просп., д. 29, Москва, 119991;</p><p>Ленинский просп., д. 4, стр. 1, Москва, 119049</p><p>Муратов Дмитрий Геннадиевич — канд. техн. наук, ведущий научный сотрудник (1), доцент (2)</p></bio><bio xml:lang="en"><p>29 Leninsky Ave., Moscow 119991;</p><p>4-1 Leninsky Ave., Moscow 119049</p><p>Dmitriy G. Muratov — Cand. Sci. (Eng.), Leading Researcher</p></bio><email xlink:type="simple">muratov@ips.ac.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-1171-336X</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Слепцов</surname><given-names>В. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Sleptsov</surname><given-names>V. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Волоколамское шоссе, д. 4, Москва, 125993</p><p>Слепцов Владимир Владимирович — доктор техн. наук, профессор, зав. кафедрой радиоэлектроники, телекоммуникаций и нанотехнологий</p></bio><bio xml:lang="en"><p>4 Volokolamskoe Highway, Moscow 125993</p><p>Vladimir V. Sleptsov — Dr. Sci. (Eng.), Professor, Head of the Department of Radio Electronics, Telecommunications and Nanotechnology</p></bio><email xlink:type="simple">08fraktal@inbox.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-4973-1328</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Кожитов</surname><given-names>Л. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Kozhitov</surname><given-names>L. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ленинский просп., д. 4, стр. 1, Москва, 119049</p><p>Кожитов Лев Васильевич — доктор техн. наук, профессор</p></bio><bio xml:lang="en"><p>4-1 Leninsky Ave., Moscow 119049</p><p>Lev V. Kozhitov — Dr. Sci. (Eng.), Professor</p></bio><email xlink:type="simple">kozitov@rambler.ru</email><xref ref-type="aff" rid="aff-3"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-9486-2482</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Запороцкова</surname><given-names>И. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Zaporotskova</surname><given-names>I. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Университетский просп., д. 100, Волгоград, 400062</p><p>Запороцкова Ирина Владимировна — доктор физ.-мат. наук, профессор, директор института приоритетных технологий</p></bio><bio xml:lang="en"><p>100 Universitetsky Ave., Volgograd 400062</p><p>Irina V. Zaporotskova — Dr. Sci. (Phys.-Math.), Professor, Director of the Institute of Priority Technologies</p></bio><email xlink:type="simple">irinazaporotskova@gmail.com</email><xref ref-type="aff" rid="aff-4"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-4657-9305</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Попкова</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Popkova</surname><given-names>A. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>ул. Железнодорожная, д. 24, Подольск, 142103</p><p>Попкова Алёна Васильевна — канд. тех. наук, старший научный сотрудник</p></bio><bio xml:lang="en"><p>24 Zheleznodorozhnaya Str., Podolsk 142103</p><p>Alena V. Popkova — Cand. Sci. (Eng.), Senior Researcher</p></bio><email xlink:type="simple">popkova-alena@rambler.ru</email><xref ref-type="aff" rid="aff-5"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-0819-6517</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Дителева</surname><given-names>А. О.</given-names></name><name name-style="western" xml:lang="en"><surname>Diteleva</surname><given-names>A. O.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Волоколамское шоссе, д. 4, Москва, 125993</p><p>Дителева Анна Олеговна — старший преподаватель, кафедра радиоэлектроники, телекоммуникаций и нанотехнологий</p></bio><bio xml:lang="en"><p>4 Volokolamskoe Highway, Moscow 125993</p><p>Anna O. Diteleva — Senior Lecturer, Department of Radio Electronics, Telecommunications and Nanotechnology</p></bio><email xlink:type="simple">anna.diteleva@mail.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-6968-1495</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Кукушкин</surname><given-names>Д. Ю.</given-names></name><name name-style="western" xml:lang="en"><surname>Kukushkin</surname><given-names>D. Yu.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Волоколамское шоссе, д. 4, Москва, 125993</p><p>Кукушкин Дмитрий Юрьевич — канд. техн. наук, доцент, кафедра радиоэлектроники, телекоммуникаций и нанотехнологий</p></bio><bio xml:lang="en"><p>4 Volokolamskoe Highway, Moscow 125993</p><p>Dmitry Yu. Kukushkin — Cand. Sci. (Eng.), Associate Professor, Department of Radio Electronics, Telecommunications and Nanotechnology</p></bio><email xlink:type="simple">Skyline34@nxt.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Цырков</surname><given-names>Р. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Tsyrkov</surname><given-names>R. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Волоколамское шоссе, д. 4, Москва, 125993</p><p>Цырков Роман Александрович — ассистент, кафедра радиоэлектроники, телекоммуникации и нанотехнологии</p></bio><bio xml:lang="en"><p>4 Volokolamskoe Highway, Moscow 125993</p><p>Roman A. Tsyrkov — Assistant, Department of Radio Electronics, Telecommunications and Nanotechnology</p></bio><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Зорин</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Zorin</surname><given-names>A. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ленинский просп., д. 4, стр. 1, Москва, 119049</p><p>Зорин Артём Викторович — аспирант, кафедра технологий материалов электроники</p></bio><bio xml:lang="en"><p>4-1 Leninsky Ave., Moscow 119049</p><p>Artem V. Zorin — Postgraduate Student</p></bio><email xlink:type="simple">m1602075@edu.misis.ru</email><xref ref-type="aff" rid="aff-3"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Институт нефтехимического синтеза им. А.В. Топчиева Российской академии наук;&#13;
Национальный исследовательский технологический университет «МИСИС»</institution><country>Россия</country></aff><aff xml:lang="en"><institution>A.V. Topchiev Institute of Petrochemical Synthesis of the Russian Academy of Sciences;&#13;
National University of Science and Technology “MISIS”</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Московский авиационный институт</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Moscow Aviation Institute</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Национальный исследовательский технологический университет «МИСИС»</institution><country>Россия</country></aff><aff xml:lang="en"><institution>National University of Science and Technology “MISIS”</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-4"><aff xml:lang="ru"><institution>Волгоградский государственный университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Volgograd State University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-5"><aff xml:lang="ru"><institution>АО «НИИ НПО «ЛУЧ»</institution><country>Россия</country></aff><aff xml:lang="en"><institution>JSC “Research Institute NPO “LUCH”</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2024</year></pub-date><pub-date pub-type="epub"><day>26</day><month>08</month><year>2024</year></pub-date><volume>27</volume><issue>3</issue><fpage>199</fpage><lpage>222</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Муратов Д.Г., Слепцов В.В., Кожитов Л.В., Запороцкова И.В., Попкова А.В., Дителева А.О., Кукушкин Д.Ю., Цырков Р.А., Зорин А.В., 2024</copyright-statement><copyright-year>2024</copyright-year><copyright-holder xml:lang="ru">Муратов Д.Г., Слепцов В.В., Кожитов Л.В., Запороцкова И.В., Попкова А.В., Дителева А.О., Кукушкин Д.Ю., Цырков Р.А., Зорин А.В.</copyright-holder><copyright-holder xml:lang="en">Muratov D.G., Sleptsov V.V., Kozhitov L.V., Zaporotskova I.V., Popkova A.V., Diteleva A.O., Kukushkin D.Y., Tsyrkov R.A., Zorin A.V.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://met.misis.ru/jour/article/view/582">https://met.misis.ru/jour/article/view/582</self-uri><abstract><p> работе представлен обзор различных видов углеродных матриц с высокой удельной поверхностью и технологии заполнения их химически активными и вспомогательными материалами. Основное внимание уделено перспективным матрицам на основе металлорганических каркасов (МОК) и на основе серийно выпускаемых рулонных углеродных материалов типа «Бусофит». Рассмотрены их особенности структуры, представлена классификация. Рассмотрены основные методы и подходы к синтезу как самих МОК, так и композиционных материалов на их основе. В качестве одного из вариантов изменения свойств МОК и композиционных материалов на их основе представлен подход, основанный на допировании МОК со структурой ZIF-67 другим металлом. В частности, научным коллективом авторов реализован синтез кобальтовых МОК, в которых Co частично замещен марганцем на стадии синтеза. Помимо этого, использована простая методика синтеза путем соосаждения в водном растворе, но модифицированная ультразвуковым воздействием, которое сокращает продолжительность синтеза. Электрохимические исследования показали, что удельная электрохимическая емкость электродов из пиролизованных МОК с частичным замещением кобальта на марганец значительно выше, чем у материалов без марганца. С увеличением содержания марганца в МОК возрастает как удельная емкость, так и плотность энергии. Допирование МОК Mn позволяет значительно (от 100 до 298 Ф/г при плотности тока 0,25 А/г) улучшить электрохимические характеристики материалов электродов для гибридных суперконденсаторов на их основе. Полученные авторами результаты свидетельствуют о том, что замещение кобальта марганцем является эффективным способом повышения электрохимических характеристик МОК. </p></abstract><trans-abstract xml:lang="en"><p>The paper presents an overview of various types of carbon matrices with a high specific surface area and the technology of filling them with chemically active and auxiliary materials. The main attention is paid to promising matrices based on metal-organic frameworks (MOFs) and on commercially available rolled carbon materials such as Busofit. Their structural features are considered and their classification is presented. The main methods and approaches to the synthesis of both MOFs themselves and composite materials based on them are considered.As one of the options for changing the properties of MOFs and composite materials based on them, an approach based on doping MOFs with a ZIF-67 structure with another metal is presented. In particular, the scientific team of authors implemented the synthesis of cobalt MOFs, in which Co is partially replaced by manganese at the synthesis stage. In addition, a simple synthesis technique was used by coprecipitation in an aqueous solution, but modified by ultrasonic exposure, which reduces the duration of the synthesis. Electrochemical studies have shown that the specific electrochemical capacity of electrodes from pyrolyzed MOFs with partial substitution of cobalt with manganese is significantly higher than that of materials without manganese. With an increase in the manganese content in MOFs, both the specific capacity and the energy density increase. Doping MOFs with Mn allows for a significant (from 100 to 298 F/g at a current density of 0.25 A/g) improvement in the electrochemical characteristics of electrode materials for hybrid supercapacitors based on them. The results obtained by the authors indicate that substituting cobalt with manganese is an effective way to improve the electrochemical characteristics of MOFs.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>металлорганические каркасы</kwd><kwd>ZIF-67</kwd><kwd>органические линкеры</kwd><kwd>ионы металлов</kwd><kwd>электроды для гибридных суперконденсаторов</kwd><kwd>металлоуглеродные нанокомпозиты</kwd><kwd>пиролиз</kwd><kwd>электродный материал</kwd><kwd>гибридный конденсатор</kwd><kwd>углеродная матрица</kwd><kwd>тонкопленочная технология</kwd><kwd>нанотехнологии</kwd></kwd-group><kwd-group xml:lang="en"><kwd>metal-organic frameworks</kwd><kwd>ZIF-67</kwd><kwd>organic linkers</kwd><kwd>metal ions</kwd><kwd>electrodes for hybrid supercapacitors</kwd><kwd>metal-carbon nanocomposites</kwd><kwd>pyrolysis</kwd><kwd>electrode material</kwd><kwd>hybrid capacitor</kwd><kwd>carbon matrix</kwd><kwd>thin-film technology</kwd><kwd>nanotechnology</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа выполнена в рамках государственного задания Минобрнауки России, номер темы FSFF-2023-0008.</funding-statement><funding-statement xml:lang="en">The work was supported by the Russian Ministry of Science and Higher Education, through state assignment No. FSFF-2023-0008.</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Козадеров О.А. 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