mateltechИзвестия высших учебных заведений. Материалы электронной техникиIzvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering1609-35772413-6387MISIS10.17073/1609-3577j.met202310.604mateltech-604Research ArticleМатематическое моделирование в материаловедении электронных компонентовMATHEMATICAL MODELING IN MATERIALS SCIENCE OF ELECTRONIC COMPONENTSМоделирование функционирования полупроводниковых приборов с учетом дефектов атомной структурыModeling the functioning of semiconductor devices taking into account defects in the atomic structurehttps://orcid.org/0000-0001-6249-0322ГайнуллинИ. К.GainullinI. K.

Москва, 119992, Ленинские горы, д. 1, стр. 2

Гайнуллин Иван Камилевич — доктор физ.-мат. наук, доцент

1 Leninskiye Gory, Moscow 119991

Ivan K. Gainullin — Dr. Sci. (Phys.-Math.), Associate Professor, Department of Physics

Ivan.Gainullin@physics.msu.ruМосковский государственный университет имени M.В. ЛомоносоваРоссияLomonosov Moscow State UniversityRussian Federation202408062024272140145Copyright © Гайнуллин И.К., 20242024Гайнуллин И.К.Gainullin I.K.This work is licensed under a Creative Commons Attribution 4.0 License.https://met.misis.ru/jour/article/view/604

В работе исследована апробация современных численных методов исследования электрофизических характеристик полупроводниковых приборов. С помощью диффузионно-дрейфовой модели рассчитаны электрофизические характеристики выбранного транзистора. Также был разработан оригинальный программный код для моделирования баллистического электронного транспорта в нанотранзисторах (топологические размеры ~10 нм) с учетом дефектов атомной структуры. Моделирование характеристик полевого нанотранзистора показало, что нарушение кристаллической структуры транзистора, приводит к деградации вольт-амперной характеристики.

The paper studies the testing of modern numerical methods for studying the electrophysical characteristics of semiconductor devices. Using the diffusion-drift model, the electrophysical characteristics of the selected transistor are calculated. An original program code was also developed for modeling ballistic electron transport in nanotransistors (topological dimensions of ~10 nm) taking into account defects in the atomic structure. Modeling the characteristics of a field-effect nanotransistor showed that a violation of the crystal structure of the transistor leads to degradation of the I–V curve.

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The authors declare that there are no conflicts of interest present.