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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">mateltech</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений. Материалы электронной техники</journal-title><trans-title-group xml:lang="en"><trans-title>Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1609-3577</issn><issn pub-type="epub">2413-6387</issn><publisher><publisher-name>MISIS</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17073/1609-3577-2013-4-39-42</article-id><article-id custom-type="elpub" pub-id-type="custom">mateltech-91</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Эпитаксиальные слои и многослойные композиции</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>EPITAXIAL LAYERS AND MULTILAYERED COMPOSITIONS</subject></subj-group></article-categories><title-group><article-title>ДЕГРАДАЦИЯ СОЛНЕЧНЫХ ЭЛЕМЕНТОВ НА ОСНОВЕ ГИДРОГЕНИЗИРОВАННОГО  АМОРФНОГО КРЕМНИЯ</article-title><trans-title-group xml:lang="en"><trans-title>DEGRADATION OF THREE–JUNCTION AMORPHOUS SI : H BASED SOLAR CELLS</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Мурашев</surname><given-names>В. Н.</given-names></name><name name-style="western" xml:lang="en"><surname>Murashev</surname><given-names>V. N.</given-names></name></name-alternatives><bio xml:lang="ru"><p>профессор, каф. ППЭ  и ФПП,  ФГАОУ  ВПО «Национальный исследовательский технологический университет «МИСиС», 119049, г. Москва,  Ленинский просп., д. 4</p></bio><bio xml:lang="en"/><email xlink:type="simple">vnmurashev@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Леготин</surname><given-names>С. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Legotin</surname><given-names>S. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>ассистент каф. ППЭ  и ФПП,  ФГАОУ  ВПО «Национальный исследовательский технологический университет «МИСиС», 119049, г. Москва, Ленинский просп., д. 4</p><p> </p></bio><email xlink:type="simple">serlego@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Краснов</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Krasnov</surname><given-names>A. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>студент каф.  ППЭ и ФПП,  ФГАОУ  ВПО «Национальный исследовательский технологический университет «МИСиС», 119049, г. Москва, Ленинский просп., д. 4</p><p> </p></bio><bio xml:lang="en"/><email xlink:type="simple">a_krasnov_a@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Дудкин</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Dudkin</surname><given-names>A. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>НПП Квант,  129626, г. Москва, 3−я Мытищинская, д. 16</p></bio><bio xml:lang="en"/><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Зезин</surname><given-names>Д. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Zezin</surname><given-names>D. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>НИУ  МЭИ,  111250, г. Москва, Красноказарменная ул., д. 14</p></bio><xref ref-type="aff" rid="aff-3"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Национальный исследовательский технологический университет «МИСиС»</institution><country>Россия</country></aff><aff xml:lang="en"><institution>National University  of Science and Technology MISIS</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>НПП КВАНТ</institution><country>Россия</country></aff><aff xml:lang="en"><institution>KVANT Research and Production Enterprise</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Национальный исследовательский университет «Московский энергетический институт»</institution><country>Россия</country></aff><aff xml:lang="en"><institution>National Research University  Moscow Energy Institute</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2013</year></pub-date><pub-date pub-type="epub"><day>16</day><month>03</month><year>2015</year></pub-date><volume>0</volume><issue>4</issue><fpage>39</fpage><lpage>42</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Мурашев В.Н., Леготин С.А., Краснов А.А., Дудкин А.А., Зезин Д.А., 2015</copyright-statement><copyright-year>2015</copyright-year><copyright-holder xml:lang="ru">Мурашев В.Н., Леготин С.А., Краснов А.А., Дудкин А.А., Зезин Д.А.</copyright-holder><copyright-holder xml:lang="en">Murashev V.N., Legotin S.A., Krasnov A.A., Dudkin A.A., Zezin D.A.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://met.misis.ru/jour/article/view/91">https://met.misis.ru/jour/article/view/91</self-uri><abstract><p>Опыт эксплуатации солнечных элементов (СЭ) на основе гидрогенизированного аморфного кремния показал, что, помимо низкой эффективности, эти преобразователи значительно быстрее деградируют по сравнению с СЭ на основе монокристаллического кремния. Процессы, которые опреде- ляют деградацию СЭ на аморфных материалах, изучены недостаточно, а также известны сообщения о дегра- дации подобных образцов без света. Проведен эксперимент по сравнению особенностей изменения во времени основных параметров преобразо- вателя в темноте и под действием естественного освещения. Продемонстрировано снижение тока короткого замыкания в образцах, выдержанных в темноте. Показано, что изменение этого параметра у засвеченных образцов в среднем такое же, а для отдельных образцов падение тока короткого замыкания существенно больше. Это свидетельствует о том, что наблюдаемый эффект не связан с эффектом Стеблера—Вронского.</p></abstract><trans-abstract xml:lang="en"><p>The operating experience of hydrogenated amorphous silicon (a−Si : H) based solar cells has shown that besides their low efficiency this type of photovoltaics degrade much faster compared to single crystal based solar cells. As far as the processes deter- mining the degradation of amorphous materials based solar cells are not well studied, and the degradation of similar cells without light exposure has also been reported, we conducted an experiment to compare the temporal change characteristics of main solar cell parameters in darkness and under natural light. The demonstration of short circuit current reduction in darkness aged solar cells should be considered as one of the most interesting results of the work. Moreover we have shown that the change of this parameter is on average the same for the illuminated cells, while for some cells short circuit current reduction is substantially higher. This is indicative of the fact that the observed effect is not related to the Staebler—Wronski effect.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>деградация солнечных элементов</kwd><kwd>тонкопленочные солнечные батареи</kwd><kwd>гидрогенизированный аморфный кремний</kwd><kwd>дисперсионные кривые</kwd><kwd>эффект Стеблера—Вронского</kwd></kwd-group><kwd-group xml:lang="en"><kwd>solar  cell degradation</kwd><kwd>thin film solar  cells</kwd><kwd>hydrogenated amorphous silicon</kwd><kwd>a−Si:H</kwd><kwd>dispersion curves</kwd><kwd>Staebler Wronski effect</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Yang, Jeffrey. Metastability of amorphous silicon / Jef- frey Yang, Subhendu Guha // PV Module Reliability Workshop. − Golden (CO), 2010. (http://www1.eere.energy.gov/solar/sunshot/ pvmrw_2010.html).</mixed-citation><mixed-citation xml:lang="en">Yang, Jeffrey. 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