SNSE2 ISLAND FILMS INVESTIGATION
https://doi.org/10.17073/1609-3577-2014-1-4-7
Abstract
In this paper, heterostructures with self−organized quantum dots have been produced using incongruent evaporation. Island films on the basis of the intermediate phases forming in the Sn-Se have been grown. The surface morphology of the structures has been studied using atomic force microscopy (AFM). A certain change of the band gap confirms the presence of quantum states in the electron spectrum of the structures. We have found that for obtaining structures with a homogeneous distribution of islands the process of incongruent evaporation should be carried out at high condensate selection speeds. By varying the speed of incongruent evaporation of the film material one can achieve directed growth of islet films with a preset islet size distribution.
About the Authors
O. I. Rabinovich
National University of Science and Technology «MISiS»
Russian Federation
assistant professor, PhD, 119049, Russia, Moscow, Leninskiy prospekt 4
Russian Federation
assistant professor, PhD, 119049, Russia, Moscow, Leninskiy prospekt 4
A. R. Kushhov
National University of Science and Technology «MISiS»
Russian Federation
assistant professor, PhD
Russian Federation
assistant professor, PhD
D. S. Gaev
assistant professor, PhD
Russian Federation
Kabardino−Balkarian State University named after H. M. Berbekov, 360004, Russia, KBR, Nalchik,
st. Chernyshevsky, 175
Russian Federation
Kabardino−Balkarian State University named after H. M. Berbekov, 360004, Russia, KBR, Nalchik,
st. Chernyshevsky, 175
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Review
For citations:
Rabinovich O.I., Kushhov A.R., Gaev D.S. SNSE2 ISLAND FILMS INVESTIGATION. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2014;(1):4-7. (In Russ.) https://doi.org/10.17073/1609-3577-2014-1-4-7
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