LONG RANGE STRESSES IN EPITAXIAL FILMS GENERATED WITH MISFIT DISLOCATIONS
https://doi.org/10.17073/1609-3577-2014-1-24-31
Abstract
The equation connecting the misfit parameter f, the number of misfit dislocation (MD) families and the distances between MDs of the same family with the edge Burgers vector components taken for different dislocation families is obtained for the first time. It is valid for various interface boundaries (hkl). To get the equation, the long range normal and shear stresses associated with MD distribution have been considered. The optimum and non−optimum stress releasing processes are discussed. The problem of threading dislocation density diminution with generation of intersecting MDs with the same Burgers vector (L−shape MDs) is also considered for (001) and (111) interfaces. It is shown that such type MDs grow the level of the long range shear stresses and can be effectively generated only at an early stage of relaxation.
About the Authors
E. M. Trukhanov
Institute of Semiconductor Physics SB RAS, 630090, Russia, Novosibirsk, Lavrenteva ave., 13
Russian Federation
Doctor of Physico−Mathematical Sciences, Leading Researcher
Russian Federation
Doctor of Physico−Mathematical Sciences, Leading Researcher
A. V. Kolesnikov
Institute of Semiconductor Physics SB RAS, 630090, Russia, Novosibirsk, Lavrenteva ave., 13
Russian Federation
Candidate of Physico−Mathematical Sciences, Senior Researcher
Russian Federation
Candidate of Physico−Mathematical Sciences, Senior Researcher
I. D. Loshkarev
Institute of Semiconductor Physics SB RAS, 630090, Russia, Novosibirsk, Lavrenteva ave., 13
Russian Federation
Candidate of Physico−Mathematical Sciences, Junior Researcher
Russian Federation
Candidate of Physico−Mathematical Sciences, Junior Researcher
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Review
For citations:
Trukhanov E.M., Kolesnikov A.V., Loshkarev I.D. LONG RANGE STRESSES IN EPITAXIAL FILMS GENERATED WITH MISFIT DISLOCATIONS. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2014;(1):24-31. (In Russ.) https://doi.org/10.17073/1609-3577-2014-1-24-31
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