INVESTIGATION OF ION−ELECTRON EMISSION IN THE PROCESS OF REACTIVE ION−BEAM ETCHING OF DIELECTRIC THIN FILM HETEROSTRUCTURES

This work presents a series of experimental studies aimed at validating  the  main theoretical aspects of ion−electron emission. Possibilities of practical implementation of the  method of operative control  of reactive ion−beam etching of different dielectric thin film materials for electronics have been found.

To obtain results on electron emission we have conducted a series of experiments with a specially  synthesized thin−film multilayer hetero- geneous compositions, i.e. Si₃N₄/Si, Ta₂O₅/Al/Si and Al/TiO₂/Si. Assessment of the effect of induced surface potential in the dielectric film on the integral signal of secondary electrons during reactive ion− beam etching allows one to confirm the dependence of the emission properties of thin dielectric films on the  electric field formed in the dielectric by the  surface potential induced by the  ion beam during reactive ion−beam etching.

We have noted that the secondary electron current emitted from the surface of dielectric films deposited on substrates of different materials differs in magnitude, i.e., it is determined by the emission properties of the substrate.

The electric field produced in the dielectric film by the induced potential creates preconditions for the  emergence of Malter emission deter- mined by the properties of the dielectric and the substrate.

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