STUDY OF A2B6 BASED MATERIALS FOR IR LASERS DOPED WITH Fe2+ IONS
https://doi.org/10.17073/1609-3577-2015-4-273-278
Abstract
It well−known that optical fibers have a «window of transparency » (1.5−3 µm) which is much wider than the spectra of the transmitted signals. For this reason there is some potential in transmitting signals using different, previously unused frequencies, in order to increase the economic efficiency of existing and new optical fiber lines. This may be the origin of the great interest to research into the creation of А2В6 and А3В5 semiconductor lasers doped with Cr2+, Co2+, Ni2+, Fe2+ and rare earth element ions. Theoretical and experimental studies in this field are usually focused on one type of semiconductor doped with one type of ion. With the appearance of the general theory of ligand structure environment of iron group ions (Co2+, Ni2+ and Fe2+) there is now a way to calculate the full matrix of luminescence parameters of iron group ions for the entire group of А2В6 semiconductors, in addition to conventional research methods. The results of research for Fe2+ ions in А2В6 semiconductors are presented in this paper.
About the Authors
I. S. Kurchatov
National Research University «Moscow Power Engineering Institute»
Russian Federation
Russian Federation
Ivan S. Kurchatov — Postgraduate Student
14 Krasnokazarmennaya Str., Moscow 111250
D. M. Kustov
National Research University «Moscow Power Engineering Institute»
Russian Federation
Russian Federation
Daniil M. Kustov — Student
14 Krasnokazarmennaya Str., Moscow 111250
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Review
For citations:
Kurchatov I.S., Kustov D.M. STUDY OF A2B6 BASED MATERIALS FOR IR LASERS DOPED WITH Fe2+ IONS. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2015;18(4):273-278. (In Russ.) https://doi.org/10.17073/1609-3577-2015-4-273-278
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