The instability of the CV characteristics capacitance when measuring AlGaN/GaN–heterostructures and the HEMT–transistors based on them

A complex of studies of the AlGaN/GaN heterostructures and the AlGaN/GaN/SiC HEMT-transistors Schottky barriers has been carried out by the C-V method and the SIMS method in order to determine the causes of the capacitance instability in some cases was made. It is shown that in most cases, the appearance of a capacitance peak on the C-V curves at frequencies 20-500 kHz was associated with the presence of leakage currents in the barrier layer and at low frequencies 1-20 kHz with generation-recombination centers.

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