For citations:

Enisherlova K.L., Goryachev V.G., Saraykin V.G., Kapilin S.A. The instability of the CV characteristics capacitance when measuring AlGaN/GaN–heterostructures and the HEMT–transistors based on them. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2016;19(2):115-123. (In Russ.) https://doi.org/10.17073/1609-3577-2016-2-115-123