Deep tellurium purification for electronic and photonic materials
https://doi.org/10.17073/1609-3577-2016-4-235-240
Abstract
The regularities of impurity distribution between the distillate and the still as well as the spatial distribution of impurities along the distillate length have been studied. We conclude that some impurities such as s−metals, Zn, Ni, V and rare metals distribute uniformly along the distillate length (20 cm). Contrarily, Se tends to concentrate in the distant (from the still) region of distillate with more than one order of magnitude higher concentration compared to the nearest region.
Keywords
Supporting agencies: Ministry of Education and Science of the Russian Federation
About the Authors
M. B. Grishechkin
Dmitry Mendeleev University of Chemical Technology of Russia
Russian Federation
Russian Federation
Mikhail B. Grishechkin — Leading Engineer.
9 Miusskaya Sq. Moscow 125047.
E. N. Mozhevitina
Dmitry Mendeleev University of Chemical Technology of Russia
Russian Federation
Russian Federation
Elena N. Mozhevitina — Cand. Sci. (Chem.), Senior Researcher.
9 Miusskaya Sq. Moscow 125047.
A. V. Khomyakov
Dmitry Mendeleev University of Chemical Technology of Russia
Russian Federation
Russian Federation
Andrew V. Khomyakov — Leading Engineer.
9 Miusskaya Sq. Moscow 125047.
M. P. Zykova
Dmitry Mendeleev University of Chemical Technology of Russia
Russian Federation
Russian Federation
Marina P. Zykova — Leading Engineer.
9 Miusskaya Sq. Moscow 125047.
R. I. Avetisov
Armoled Ltd.
Russian Federation
Russian Federation
Roman I. Avetisov — Cand. Sci. (Chem.), General Director.
9/5 Miusskaya Sq., Moscow 125047.
I. Ch. Avetissov
Dmitry Mendeleev University of Chemical Technology of Russia
Russian Federation
Igor Ch. Avetissov — Dr. Sci. (Chem.), Professor, Head of the Department.
Russian Federation
Igor Ch. Avetissov — Dr. Sci. (Chem.), Professor, Head of the Department.
9 Miusskaya Sq. Moscow 125047.
References
1. CdTe and Related Compounds; Physics, Defects, Hetero− and Nano−structures. Pt II: Crystal growth, Surface and Application / Ed. by R. Triboulet, P. Shiffert. − Oxford: Elsevier, 2010. − 296 p. DOI: 10.1016/B978−0−08−096513−0.00001−7
2. Xu, H. Preparation of low−loss Ge15Ga10Te75 chalcogenide glass for far−IR optics applications / H. Xu, Y. Xe, X. Wang, Q. Nie, P. Zhang, T. Xu, Sh. Dai, X. Zhang, G. Tao // Infrared Phys. Technol. − 2014. − V. 65. − P. 77—82. DOI: 10.1016/j.infrared.2014.03.008
3. Xu, Y. Research into the electrical property variation of undoped CdTe and ZnTe crystals grown under Te−rich conditions / Y. Xu, H. Liu, Y. He, R. Yang, L. Luo, W. Jie // J. Alloys Compd. − 2014. − V. 612. − P. 392—397. DOI: 10.1016/j.jallcom.2014.05.167
4. Nokhwal, R. Study of dislocations in HgCdTe epilayers at (111)B and (110) surfaces using modified defect etchant / R. Nokhwal, R. S. Saxena, B. L. Sharma, A. Kumar, S. A. Hashmi, R. K. Sharma // Infrared Phys. Technol. − 2015. − V. 71. − P. 378—383. DOI: 10.1016/j.infrared.2015.05.016
5. Avetissov, I. Universal approach for nonstoichiometry determination in binary chemical compounds / I. Avetissov, E. Mozhevitina, A. Khomyakov, T. Khanh // Cryst. Res. Technol. − 2014. − V. 50. − P. 93—100. DOI: 10.1002/crat.201400201
6. Пат. CN101892496 A (КНР). Method for preparing highpurity 5N tellurium from 3N crude tellurium, 2010.
7. Пат. CN102153054 A (КНР). Preparation method of high purity tellurium, 2011.
8. Пат. CN104233362 A (КНР). Preparation method for highpurity tellurium, 2014.
9. Пат. CN103183322 A (КНР). Preparation method of high purity tellurium, 2013.
10. Пат. UA98751 C2 (Украина). Пристрій для очищення телуру методом вакуумної дистиляції / Б. Б. Нетак, Ю. О. Канібор, С. Ю. Єрмаков, Д. В. Черненков, В. М. Біляков, О. С. Єрмаков, 2012.
11. Zaiour, A. Purification of tellurium to nearly 7N purity / A. Zaiour, K. Zahraman, M. Roumie, J. Charara, A. Fawaz, F. Lmai, M. Hage−Ali // Mater. Sci. Eng.: B. − 2006. − V. 131, N 1−3. − P. 54—61. DOI: 10.1016/j.mseb.2006.03.029
12. Sun, Zh.−M. Preparation of high purity tellurium containing Cu and Se by chemical method / Zh.−M. Sun, Y.−J. Zheng // Trans. Nonferrous Met. Soc. China. − 2011. − V. 21, N 3. − P. 665—672. DOI: 10.1016/S1003−6326(11)60763−2
13. Hageman, A. M. Purification of tellurium to 6N using a multistage vacuum distillation method / A. M. Hageman, M. J. Harrison, N. Fritz, T. N. Krehbiel, R. White, J. Patenaude, D. S. McGregor // Proc. SPIE. − 2007. − V. 6707: Penetrating radiation systems and applications VIII, 67070Z. − P. 1—7. DOI: 10.1117/12.740525
14. Куликов, И. С. Термодинамика оксидов / И. С. Куликов. − М.: Металлургия, 1986. − 344 с.
15. Герасимов, Л. И. Химическая термодинамика в цветной металлургии, часть VI / Л. И. Герасимов, А. И. Крестовников, С. И. Горбов. − М.: Металлургия, 1974. − C. 283—286.
16. Munirathnam, N. R. Preparation of high purity tellurium by zone refining / N. R. Munirathnam, D. S. Prasad, Ch. Sudheer, A. J. Singh, T. L. Prakash // Bull. Mater. Sci. − 2002. − V. 25, N 2. − P. 79—83. DOI: 10.1007/BF02706225
17. Hoffmann, J. E. Recovering selenium and tellurium from copper refinery slimes / J. E. Hoffmann // JOM. − 1989. − V. 41, N 7. − P. 33—38. DOI: 10.1007/BF03220269
18. Wilbut, S . M . Optimizing performance for a collision/ reaction cell ICP−MS system operating in helium collision mode / S. M. Wilbut, N. Sugiyama, E. McCurdy // Spectroscopy − 2010. − Special Iss. − P. 20. URL: http://www.spectroscopyonline.com/optimizing−performance−collisionreaction−cell−icp−ms−system− operating−helium−collision−mode (дата обращения: 10.06.2017)
19. Dehelean, A . Determination of lead and strontium isotope ratios in wines by inductively coupled plasma mass spectrometry / A. Dehelean, C. Voica // Rom. Journ. Phys. − 2012. − V. 57, N 7-8. − P. 1194—1203. URL: http://www.nipne.ro/rjp/2012_57_7-8/1194_1203.pdf
20. Пат. 2374358 (РФ). Способ получения углеродсодержащих покрытий / П. А. Аверичкин, В. А. Кальнов, Е. А. Кожухова, Б. Н. Левонович, Ю. П. Маишев, Ю. Н. Пархоменко, С. Л. Шевчук, А. А. Шлёнский, 2009.
Review
For citations:
Grishechkin M.B., Mozhevitina E.N., Khomyakov A.V., Zykova M.P., Avetisov R.I., Avetissov I.Ch. Deep tellurium purification for electronic and photonic materials. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2016;19(4):235-240. (In Russ.) https://doi.org/10.17073/1609-3577-2016-4-235-240
Views:
1085
Email this article 