Synthesis and magnetoresistance of (Cd1−x Znx)3As2 (x = 0,007) crystals
https://doi.org/10.17073/1609-3577-2017-2-134-141
Abstract
The vapor phase growth of Cd3As2—Zn3As2 (in the following (Cd1−x Znx)3As2 solid solutions process is described. The (Cd0,993 Zn0,007)3As2 solid solution single crystals were synthesized. Scanning electron microscopy and electron diffraction data suggest high crystalline quality of studied sample. Its structure and surface morphology, indicating the presence of growth nuclei and cleavage planes, were investigated. Giant anisotropic magnetoresistance and Shubnikov — de Haas oscillations were observed at low temperatures. Obtained results suggests that peculiarities of Dirac semimetal phase persist in (Cd1−x Znx)3As2 solid solution at low zinc content. At the same time, there are indications of some differences with initial Cd3As2 properties.
Keywords
About the Authors
A. V. KochuraRussian Federation
Cand. Sci. (Phys.−Math.), Deputy Director
L. N. Oveshnikov
Russian Federation
Cand. Sci. (Phys.−Math.), Research Engineer
A. F. Knjazev
Russian Federation
Dr. Sci. (Phys.−Math.)
A. P. Kuzmenko
Russian Federation
Dr. Sci. (Phys.−Math.), Director
A. B. Davydov
Russian Federation
Cand. Sci. (Phys.−Math.), Senior Researcher
S. Yu. Gavrilkin
Russian Federation
Researcher
E. A. Pilyuk
Russian Federation
Cand. Sci. (Phys.−Math.), Associate Professor
V. S. Zakhvalinskii
Russian Federation
Dr. Sci. (Phys.−Math.), Professor
V. A. Kulbachinskii
Russian Federation
Dr. Sci. (Phys.−Math.), Head of Department
B. A. Aronzon
Russian Federation
Dr. Sci. (Phys.−Math.), Chief Researcher
References
1. Armitage N. P., Mele E. J., Vishwanath A. Weyl and Dirac semimetals in three dimensional solids. Rev. Mod. Phys., 2018, vol. 90, no. 1, p. 015001. DOI: 10.1103/RevModPhys.90.015001
2. He L. P., Hong X. C., Dong J. K., Pan J., Zhang Z., Zhang J., Li S. Y. Quantum transport evidence for three−dimensional Dirac semimetal phase in Cd3As2. Phys. Rev. Lett., 2014, vol. 113, no. 24, p. 246402. DOI: 10.1103/PhysRevLett.113.246402
3. Feng J., Pang Y., Wu D., Wang Z., Weng H., Li J., Dai X., Fang Z., Shi Y., Lu L. Large linear magnetoresistance in Dirac semimetal Cd3As2 with Fermi surfaces close to the Dirac points. Phys. Rev. B, 2015. vol. 92. no. 8, p. 081306(R). DOI: 10.1103/PhysRevB.92.081306
4. Zhang K., Pan H., Zhang M., Wei Z., Gao M., Song F., Wang X., Zhang R. Controllable synthesis and magnetotransport properties of Cd3As2 Dirac semimetal nanostructures. RSC Advances, 2017, vol. 7, no. 29, pp. 17689—17696. DOI: 10.1039/c7ra02847d
5. Li C.−Z., Zhu R., Ke X., Zhang J.−M., Wang L. X., Zhang L., Liao Z.−M., Yu D.−P. Synthesis and photovoltaic properties of Cd3As2 faceted nanoplates and nano−octahedrons. Cryst. Growth Design, 2015, vol. 15, no. 7, pp. 3264—3270. DOI: 10.1021/acs.cgd.5b00399
6. Galeeva A. V., Krylov I. V., Drozdov K. A., Knjazev A. F., Kochura A. V., Kuzmenko A. P., Zakhvalinskii V. S., Danilov S. N., Ryabova L. I., Khokhlov D. R. Electron energy relaxation under terahertz excitation in (Cd1−xZnx)3As2 Dirac semimetals. Belstein J. Nanotechnology, 2017, vol. 8, no. 1, pp. 167—171. DOI: 10.3762/ bjnano.8.17
7. Wang Q., Li C.−Z., Ge S., Li J.−G., Lu W., Lai J., Liu X., Ma J., Yu D.−P., Liao Z.−M., Sun D. Ultrafast broadband photodetectors based on three−dimensional Dirac semimetal Cd3As2. Nano Letters, 2017, vol. 17, no. 2, pp. 834—841. DOI: 10.1021/acs.nanolett.6b04084
8. Walowski J., Munzenberg M. Perspective: Ultrafast magnetism and THz spintronics. J. Appl. Phys., 2016, vol. 120, no. 14, p. 140901. DOI: 10.1063/1.4958846
9. Arushanov E. K. Crystal growth and characterization of II3V2 compounds. Prog. Crystal. Growth. Charact., 1981, vol. 3, no. 2–3, pp. 211—255. DOI: 10.1016/0146−3535(80)90020−9
10. Volodina G. F., Zakhvalinskii V. S., Kravtsov V. Kh. Crystal structure of α′′′−(Zn1−xCdx)3As2 (x = 0.26). Crystallography Reports, 2013, vol. 58, no. 4, pp. 563—567. DOI: 10.1134/S1063774513040226
11. Arushanov E. K. II3V2 compounds and alloys. Prog. Crystal. Growth. Charact., 1992, vol. 25, no. 3, pp. 131—201. DOI: 10.1016/0960− 8974(92)90030−T
12. Belogorokhov A. I., Zakharov I. S., Knyazev A. F., Kochura A. V. Photoelectric properties of Se−doped Cd1.23Zn1.77As2 crystals. Inorganic Materials, 2000, vol. 36, no. 7, pp. 653—656. DOI: 10.1007/ BF02758414
13. Liang T., Gibson Q., Ali M. N., Liu M., Cava R. J., Ong N. P. Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd3As2. Nature Materials, 2015, vol. 14, no. 3, pp. 280—284. DOI: 10.1038/nmat4143
14. Lovett D. R. Semimetals and narrow band semiconductors. London: Pion Limited, 1977. 256 p.
15. Arushanov E. K., Knyazev A. F., Nateprov A. N., Radautsan S. I. Energy gap dependence of Cd3−xZnxAs2 on composition. Semiconductors, 1983, vol. 17, no. 7, pp. 759—761.
16. Lu H., Zhang X., Bian Y., Jia S. Topological Phase Transition in Single Crystals of (Cd1−xZnx)3As2. Scientific Reports, 2017, vol. 7, no. 1, p. 3148. DOI: 10.1038/s41598−017−03559−2
17. Sankar R., Neupane N., Xu S.−Y., Butler C. J., Zeljkovic I., Muthuselvam I. P., Huang F.−T., Guo S.−T., Karna S. K., Chu M.−W., Lee W.L., Lin M.−T., Jayavel R., Madhavan V., Hasan M. Z., Chou F. C. Large single crystal growth, transport property, and spectroscopic characterization of three−dimensional Dirac semimetal Cd3As2. Scientific Reports, 2015, vol. 5, p. 12966. DOI: 10.1038/srep12966
18. Ali M. N., Gibson Q., Jeon S., Zhou B. B., Yazdani A., Cava R. J. The crystal and electronic structures of Cd3As2, the three− dimensional electronic analogue of grapheme. Inorganic Chemistry, 2014. vol. 53, pp. 4062—4067. DOI: 10.1021/ic403163d
19. Schonher P., Hesjedal T. Structural properties and growth mechanism of Cd3As2 nanowires. Appl. Phys. Lett., 2015, vol. 106, no. 1, p. 013115. DOI: 10.1063/1.4905564
20. Zhang K., Pan H., Zhang M., Wei Z., Gao M., Song F., Wang X., Zhang R. Controllable synthesis and magnetotransport properties of Cd3As2 Dirac semimetal nanostructures. RSC Advances, 2017, vol. 7, no. 29, pp. 17689—17696. DOI: 10.1039/c7ra02847d
21. Cheng P., Zhang C., Liu Y., Yuan X., Song F., Sun Q., Zhou P., Zhang D. W., Xiu F. Thickness−dependent quantum oscillations in Cd3As2 thin films. New J. Phys, 2016, vol. 18, no. 8, p. 083003. DOI: 10.1088/1367−2630/18/8/083003
22. Kochura A. V., Marenkin S. F., Ril A. I., Zheludkevich A. L., Abakumov P. V., Knjazev A. F., Dobromyslov M. B. Growth and characterization of Cd3As2 + MnAs composite. J. Nano− and Electron. Phys., 2015, vol. 7, no. 4, p. 04079. URL: http://essuir.sumdu.edu.ua/ handle/123456789/44550
23. Sharafeev A., Gnezdilov V., Sankar R., Chou F.C., Lemmens P. Optical phonon dynamics and electronic fluctuations in the Dirac semimetal Cd3As2. Phys. Rev. B, 2017, vol. 95, no. 23, p. 235148. DOI: 10.1103/PhysRevB.95.235148
24. Abrikosov A. A. Quantum linear magnetoresistance; solution of an old mystery. J. Phys. A: Math. Gen., 2003, vol. 36, no. 35, pp. 9119—9131. DOI: 10.1088/0305−4470/36/35/301
25. Parish M. M., Littlewood P. B. Non−saturating magnetoresistance in heavily disordered semiconductors. Nature, 2003, vol. 426, no. 6963, pp. 162—166. DOI: 10.1038/nature02073
26. Zhao Y., Liu H., Zhang C., Wang H., Wang J., Lin Z., Xing Y., Lu H., Liu J., Wang Y., Brombosz S. M., Xiao Z., Jia S., Xie X. C., Wang J. Anisotropic Fermi surface and quantum limit transport in high mobility three−dimensional Dirac semimetal Cd3As2. Phys. Rev. X, 2015, vol. 5, no. 3, p. 031037. DOI: 10.1103/PhysRevX.5.031037
27. Narayanan A., Watson M. D., Blake S. F., Bruyant N., Drigo L., Chen Y. L., Prabhakaran D., Yan B., Felser C., Kong T., Canfield P. C., Coldea A. I. Linear magnetoresistance caused by mobility fluctuations in n−doped Cd3As2. Phys. Rev. Lett., 2015, vol. 114, no. 11, p. 117201. DOI: 10.1103/PhysRevLett.114.117201
28. Li H., He H., Lu H.−Z., Zhang H., Liu H., Ma R., Fan Z., Shen S.−Q., Wang J. Negative magnetoresistance in Dirac semimetal Cd3As2. Nature Comm., 2016, vol. 7, p. 10301. DOI: 10.1038/ ncomms10301
Review
For citations:
Kochura A.V., Oveshnikov L.N., Knjazev A.F., Kuzmenko A.P., Davydov A.B., Gavrilkin S.Yu., Pilyuk E.A., Zakhvalinskii V.S., Kulbachinskii V.A., Aronzon B.A. Synthesis and magnetoresistance of (Cd1−x Znx)3As2 (x = 0,007) crystals. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2017;20(2):134-141. (In Russ.) https://doi.org/10.17073/1609-3577-2017-2-134-141