The effect chemical treatment of the substrate cadmium telluride on the quality of epitaxial structures
https://doi.org/10.17073/1609-3577-2018-1-43-47
Abstract
The etching of wafers of cadmium telluride in aqueous and nonaqueous solutions before the epitaxial process of building structures CdxHg1-xTe and its influence on the surface quality of epitaxial layers. As the etchants investigated 2—20 % solution of bromine in isobutyl alcohol, 5 % solution of bromine in methanol, dimethylsulfoxide, ethylene glycol, solutions of bromine in hydrobromic acid and mixed with glycerin, a saturated solution of potassium dichromate in sulfuric acid. The speed of etching was varied from 0.2 to 9 µm/min. Polishing Set nature of the etching substrate of cadmium telluride in 5 % solution of bromine in i-butanol, the dissolution process is diffusion in nature and is limited by the mass transfer of the reactants in the temperature range of 10—60 °C, depending on the concentration of bromine and the viscosity of the solution. Studied the morphology and surface finish of epitaxial layers of CdxHg1-xTe, depending on the method of etching the original substrate. Found the optimal compositions of etchants for precipitaciones processing of obtaining structures with a height of asperities of the surface at 0.1 atm.
About the Authors
V. V. Paramonov
Kaluga Branch of Bauman Moscow State Technical University
Russian Federation
Russian Federation
Victor V. Paramonov: Cand. Sci. (Chim.), Associate Professor
2 Bazhenova Str, Kaluga 248000
O. V. Novikova
JSC «MeGa Epitech»
Russian Federation
Russian Federation
O. V. Novikova: Engineer
19 2th Akademicheski Proezd, Kaluga 248033
V. G. Kosushkin
Kaluga Branch of Bauman Moscow State Technical University
Russian Federation
Russian Federation
Victor G. Kosushkin: Dr. Sci. (Eng.), Professor
2 Bazhenova Str, Kaluga 248000
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Review
For citations:
Paramonov V.V., Novikova O.V., Kosushkin V.G. The effect chemical treatment of the substrate cadmium telluride on the quality of epitaxial structures. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2018;21(1):43-47. (In Russ.) https://doi.org/10.17073/1609-3577-2018-1-43-47
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