Influence of deposition of cobalt particles on quantum corrections to Droude conductivity in twisted CVD graphene

The use of graphene in electronics requires both an experimental study of the formation of high-quality low-resistance contacts and a deeper understanding of the mechanisms of electron carrier transport in graphene sheets and in the vicinity of metal / graphene interface. In this work, we studied the charge carrier transport in twisted CVD graphene, which was decorated with electrochemically deposited Co particles forming an ohmic contact with the graphene sheet. The temperature and magnetic field dependences of the sheet resistance R_‘(T,B) in the pristine and decorated twisted graphene on silicon oxide substrate are compared. The coexistence of the negative (at magnetic fields with induction B below 1 T) and positive (B higher than 1 T) contributions to the magnetoresistive effect in both types of samples is shown. The R_‘(T,B) dependences are analyzed in fraimwork of the theory of two-dimensional interference quantum corrections to Drude conductivity, taking into account the competition of the contribution from the hopping conduction mechanism. It has been shown that in the studied temperatures range (2-300 K) and magnetic fields (up to 8 T), when describing the transport of charge carriers in the studied samples, it is necessary to take into account at least three interference contributions to the conductivity: from weak localization, intervalley scattering, and breaking of pseudospin chirality, as well as warping of graphene due to thermal fluctuations.

graphene, graphene/metal structures, electric transport, magnetoresistance

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