Preparation and transport properties of oriented buckypapers with single walled carbon nanotubes
M. S. Galkov,
N. P. Stepina,
M. R. Predtechenskiy,
A. E. Bezrodny,
V. V. Kirienko,
A. V. Dvurechenskii https://doi.org/10.17073/1609-3577-2019-2-104-111
Abstract
Buckypapers (BP) with carbon nanotubes (CNT) are very promising for a lot of applications, in which their high conductance, strength and small weight are required. In this work, isotropic BP were prepared using the solution-based deposition that includes the single walled carbon nanotubes (SWCNT) dispersion and the dispersion filtration from a solvent. To increase the BP conductivity, the orientation of the SWCNT bundles composing BP and a following iodine doping were applied. The method of extrusion through the narrow (300 µm) gap was used for the SWCNT orientation. The temperature dependences of conductance for isotropic, oriented and doped BP were studied to understand the effect of CNT alignment and the mechanism of transport through SWCNT BP. It was shown that bundle orientation increases the BP conductivity from ~103 S × cm-1 to ~104 S × cm-1, and iodine doping of oriented samples additionally increase the conductivity by an order. The fluctuation – assisted tunneling between CNT bundles was used to describe the mechanism of low temperature conductivity.
Supporting agencies: This work was supported by the Russian State Program (Grant No. 0306-2016-0015).
About the Authors
M. S. Galkov
OCSiAl Group
United States
United States
1804 Embarcadero Rd., Suite 202, Palo Alto, California, 94303
Mikhail S. Galkov
N. P. Stepina
Institute of Semiconductor Physics
Russian Federation
Russian Federation
13 Lavrent’ev Ave., Novosibirsk 630090, Russia
Natalia P. Stepina
M. R. Predtechenskiy
OCSiAl Group
United States
United States
1804 Embarcadero Rd., Suite 202, Palo Alto, California, 94303
Mikhail R. Predtechenskiy
A. E. Bezrodny
OCSiAl Group
United States
United States
1804 Embarcadero Rd., Suite 202, Palo Alto, California, 94303
Alexander E. Bezrodny
V. V. Kirienko
Institute of Semiconductor Physics
Russian Federation
Russian Federation
13 Lavrent’ev Ave., Novosibirsk 630090, Russia
Viktor V. Kirienko
A. V. Dvurechenskii
Institute of Semiconductor Physics
Russian Federation
Russian Federation
13 Lavrent’ev Ave., Novosibirsk 630090, Russia
Anatolii V. Dvurechenskii
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Review
For citations:
Galkov M.S., Stepina N.P., Predtechenskiy M.R., Bezrodny A.E., Kirienko V.V., Dvurechenskii A.V. Preparation and transport properties of oriented buckypapers with single walled carbon nanotubes. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2019;22(2):104-111. (In Russ.) https://doi.org/10.17073/1609-3577-2019-2-104-111
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