Modeling of kinetics of chemical vapor deposition and the basic characteristics of the layers
https://doi.org/10.17073/1609-3577-2021-2-88-96
Abstract
Proposed the molecular-kinetic model of formation of layers from the gas phase, including complex kinetic scheme of stages and equations for calculations of the speeds of heterogeneous and homogeneous growth. The growth rate takes into account the stage of diffusion, adsorption and chemical reaction with the formation on the substrate and in a boundary layer of the main gas, by-products and clusters. Defined indicators of chemical, structural and topological irregularities, as the deviations of the basic characteristics of layers. The characteristics of silicone oxide layers are estimated using examples of deposition by oxidation of monosilane and tetraethoxysilane.
About the Author
V. L. Evdokimov
Molecular Electronics Research Institute, JSC
Russian Federation
Russian Federation
6-1 Acad. Valieva Str., Moscow, Zelenograd 124460
Vladimir L. Evdokimov — Researcher
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Review
For citations:
Evdokimov V.L. Modeling of kinetics of chemical vapor deposition and the basic characteristics of the layers. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2021;24(2):88-96. (In Russ.) https://doi.org/10.17073/1609-3577-2021-2-88-96
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