For citations:

Mazalov A.V., Sabitov D.R., Kureshov V.A., Padalitsa A.A., Marmalyuk A.A., Akchurin R.Kh. INFLUENCE OF CONDITIONS OF GROWTH ON STRUCTURAL PERFECTION OF LAYERS OF ALN RECEIVED BY METHOD MOS-GIDRIDNOY OF AN EPITAXY. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2013;(1):45-48. (In Russ.) https://doi.org/10.17073/1609-3577-2013-1-45-48