Investigation of the effect of short-term exposure of oxygen and hydrogen plasma on the composition and structure of thin tin dioxide films
https://doi.org/10.17073/1609-3577-2021-2-119-130
Abstract
Modern technologies cannot do without the production of thin films of tin dioxide, which are most widely used mainly in three areas: as transparent electrodes, catalysts, and solid-state sensors of various gases. Their use as transparent electrodes is associated with a high transmittance of tin dioxide layers in the optical range, as well as with their low electrical resistivity. The effect of short-term exposure to plasma on the composition and structure of thin films of tin dioxide obtained from a solution of pentahydrate tin tetrachloride in 97% ethanol with different concentrations of tin ions is considered. A linear character of the dependence of the thickness of the tin dioxide SnO2 films on the concentration of the solution and the number of deposited layers is revealed. A decrease in the electrical resistance of the films with an increase in the concentration of the initial solution and an increase in the number of layers was found. It is shown that the treatment of SnO2 films with hydrogen plasma makes it possible to reduce their electrical resistance of the films without decreasing the transparency. Treatment with oxygen plasma reduces the transparency of the SnO2 films, and the resistance of the films increases with an increase in the duration of such treatment.
About the Authors
N. M. Tompakova
Satbayev University
Kazakhstan
Kazakhstan
22A Satpayev Str., Alma-Ata 050013
Nazgul M. Tompakova — Senior-Lecturer, Master of Physics
A. A. Polisan
National Research Technological University "MISiS"
Russian Federation
Russian Federation
4 Leninsky Prospekt, Moscow 119049
Andrey A. Polisan — Dr. Sci. (Eng.), Professor
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Review
For citations:
Tompakova N.M., Polisan A.A. Investigation of the effect of short-term exposure of oxygen and hydrogen plasma on the composition and structure of thin tin dioxide films. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2021;24(2):119-130. (In Russ.) https://doi.org/10.17073/1609-3577-2021-2-119-130
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