Isotopic Effects in Spectra of Electrically Active Impurities in Silicon−28, 29 and 30 with High Isotopic Enrichment
https://doi.org/10.17073/1609-3577-2012-4-4-8
Abstract
Results are reported on an investigation of IR−absorption spectra of shallow donors and acceptors in high−purity single crystals of stable 28Si(99.99%), 29Si(99.92%) and 30Si(99,97%) silicon isotopes grown by zone melting. The content of residual boron, phosphorus and arsenic impurities Nhas been determined in the single crystals with a detection limit of 1 · 1012 at./cm3, 4 · 1011 at./cm3 and 1 · 1012 at./cm3, respectively. IR−spectroscopy results on the content of shallow donors and acceptors are in a good agreement with the data on concentration of uncompensated charge carriers obtained by Hall measurements. The parameters of absorption lines for the boron and phosphorus impurities in the single crystals of silicon isotopes have been studied. We show that a change in the isotopic composition of silicon leads to a shift in the energy spectrum of shallow impurity centers towards the high−energy range with an increase in the atomic mass of the isotope.
About the Authors
V. T. Kotereva
G. G. Devyatykh Institute of Chemistry of High−Purity Substances of the Russian Academy of Sciences, Nizhny Novgorod
Russian Federation
Russian Federation
A. V. Gusev
G. G. Devyatykh Institute of Chemistry of High−Purity Substances of the Russian Academy of Sciences, Nizhny Novgorod
Russian Federation
Russian Federation
V. A. Gavva
G. G. Devyatykh Institute of Chemistry of High−Purity Substances of the Russian Academy of Sciences, Nizhny Novgorod
Russian Federation
Russian Federation
E. A. Kozyrev
G. G. Devyatykh Institute of Chemistry of High−Purity Substances of the Russian Academy of Sciences, Nizhny Novgorod
Russian Federation
Russian Federation
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Review
For citations:
Kotereva V.T., Gusev A.V., Gavva V.A., Kozyrev E.A. Isotopic Effects in Spectra of Electrically Active Impurities in Silicon−28, 29 and 30 with High Isotopic Enrichment. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2012;(4):4-8. (In Russ.) https://doi.org/10.17073/1609-3577-2012-4-4-8
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