Activation processes during operation of an Ag/SnSe/Ge2Se3/W ion memristor with a self-directed current-conducting channel
https://doi.org/10.17073/1609-3577j.met202308.550
EDN: RDDACG
Abstract
In an Ag/SnSe/Ge2Se3/W ionic type memristor, the activation energy of two main processes responsible for its operation has been determined, namely: the activation energy for the formation of a conductive channel and the activation energy for memristor degradation. By measuring the current-voltage characteristics, the electrical conductivity of the memristor in low- and high-resistance operating modes was assessed. To determine the activation energy, the Arrhenius law and the provisions of the thermodynamics of irreversible processes were used, in particular the second postulate of Onsager, according to which the growth rate of the irreversible part of the entropy of a system tending to equilibrium is proportional to the sum of the products of the flows occurring in the system and the generalized thermodynamic force corresponding to each flow. The equilibrium state of the memristor was taken to be the state in which the memristor lost the ability to function as a resistive memory cell. The flow of Ag+ ions – electromigration was used as a substance flow. For the first process, the activation energy was 0.24 eV, and for the second, 1.16 eV. The different values of activation energy reflect the difference between the agglomeration mechanism of formation of a current-conducting channel, typical of an Ag/SnSe/Ge2Se3/W memristor, and the “standard” mechanism of substance transfer based on a group of point defects, which accompanies the process of memristor degradation.
Keywords
electrical conductivity,
solid electrolyte,
amorphous matrix,
activation energy,
agglomeration mechanism
Supporting agencies: This work was supported by the Russian Foundation for Basic Research, project No. 19-29-03003 MK.
About the Authors
A. N. Aleshin
Institute of Ultra High Frequency Semiconductor Electronics of the Russian Academy of Sciences
Russian Federation
Russian Federation
7-5 Nagorny Passage, Moscow 117105
Andrey N. Aleshin — Dr. Sci. (Phys.-Math.), Chief Researcher, Laboratory for Basic Research of Low-Dimensional Electronic Systems in Nanoheterostructures of А3В5 Compounds
O. A. Ruban
Institute of Ultra High Frequency Semiconductor Electronics of the Russian Academy of Sciences;
MIREA – Russian Technological University
Russian Federation
Russian Federation
7-5 Nagorny Passage, Moscow 117105;
78 Vernadsky Ave., Moscow 119571
Oleg A. Ruban — Cand. Sci. (Eng.), Senior Researcher, Laboratory for Basic Research of Low-Dimensional Electronic Systems in Nanoheterostructures of А3В5 Compounds; Associate Professor of the Department of Physics and Technical Mechanics
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Review
For citations:
Aleshin A.N., Ruban O.A. Activation processes during operation of an Ag/SnSe/Ge2Se3/W ion memristor with a self-directed current-conducting channel. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2023;26(4):290-299. (In Russ.) https://doi.org/10.17073/1609-3577j.met202308.550. EDN: RDDACG
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