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On the relevance of the problem of synthesis of new materials in the conditions of innovative industrial development

https://doi.org/10.17073/1609-3577j.met202307.560

EDN: HWZZVP

Abstract

The article discusses current problems of the synthesis of new materials in modern conditions. It is noted that today this is the most important strategic task of innovative development of Russian industry. The factors determining the relevance of this task are formulated. A brief analysis of the state of Russian microelectronics is given. The importance of mathematical modeling methods and the need to develop innovative approaches in the field of synthesis of new materials are shown. The main directions of scientific research related to the development of new model concepts, methods and algorithms used in the field of mathematical modeling of the structures and properties of nanomaterials, as well as systems based on them, discussed at the IV International Conference “Mathematical Modeling in Materials Science of Electronic Components” (ICM3SEC-2022). The paper shows that for the further development of methods and means of mathematical modeling, a domestic high-performance environment for scientific research is required, with a comfortable user interface, flexibility in setting up resources, high performance and reliability.

About the Authors

A. A. Zatsarinnyy
Federal Research Centre “Information and Control” of the Russian Academy of Sciences
Russian Federation

44-2 Vavilov Str., Moscow 119333

Alexandеr A. Zatsarinnyy — Dr. Sci. (Eng.), Chief Researcher, Deputy Director



K. K. Abgaryan
Federal Research Centre “Information and Control” of the Russian Academy of Sciences
Russian Federation

44-2 Vavilov Str., Moscow 119333

Karine K. Abgaryan — Dr. Sci. (Phys.-Math.), Chief Researcher, Head of the Department



References

1. Vlasova V.V., Gokhberg L.M., Ditkovskii K.A., Kotsemir M.N., Kuznetsova I.A., Martynova S.V., Nesterenko A.V., Polyakova V.V., Ratai T.V., Repina A.A., Rosovetskaya L.A., Sagieva G.S., Strel’tsova E.A., Tarasenko I.I., Fridlyanova S.Yu., Yudin I.B., Varzanovtseva I.O., Gokhberg L.M., Kuz’minov Ya.I. The science. Technologies. Innovation: 2023. Moscow: NIU VShE; 2023. 102 p. (In Russ.). https://doi.org/10.17323/978-5-7598-2742-9

2. Abgaryan K.K. Multiscale modeling in problems of structural materials science. Moscow: MAKS Press; 2017. 284 p. (In Russ.)

3. Zatsarinnyy A.A., Abgaryan K.K. Synthesis of new materials as a priority direction of innovative development of the industry. Proceed. of the IV Inter. сonf. “Mathematical modeling in materials science of electronic component” (ICM3SEC-2022). October 24–26, 2022, Moscow. Moscow: MAKS Press; 2022. P. 8—14. (In Russ.). https://doi.org/10.29003/m3057.ММMSEC-2022/8-14

4. Abgaryan K.K., Osipova V.A. Application of decision support methods for the multicriterial selection of multiscale compositions. Informatika i ee primeneniya = Informatics and Applications. 2019; 13(2): 47—53. (In Russ.). https://doi.org/10.14357/19922264190207

5. Zatsarinnyy A.A., Abgaryan K.K. Factors that determine the relevance of creating a research infrastructure for the synthesis of new materials as part of the implementation of the priorities of scientific and technological development of Russia. Proceed. of the I Inter. сonf. “Mathematical modeling in materials science of electronic component” (ММMSEC-2019). October 21–23, 2019, Moscow. Moscow: MAKS Press; 2019. P. 8—11. (In Russ.)

6. Zatsarinny A.A., Abgaryan K.K. Factors determining the relevance of creating a research infrastructure for synthesizing new materials in implementing the priorities of scientific and technological development of Russia. Russian Microelectronics. 2020; 49(8): 600—602. https://doi.org/10.1134/S1063739720080132

7. Zatsarinnyy A.A., Abgaryan K.K. Current problems of creation of research infrastructure for synthesis of new materials in the framework of the digital transformation of society. Proceed. of the II Inter. сonf. “Mathematical modeling in materials science of electronic component” (ММMSEC-2020). October 19–20, 2020, Moscow. Moscow: MAKS Press; 2020. P. 3—13. (In Russ.). https://doi.org/10.29003/m1507.MMMSEC-2020/8-13

8. Telminov O.A., Gornev E.S. Analysis of the element base and circuit design for neuromorphic computing on memristor crossbars. Proceed. of the IV Inter. сonf. “Mathematical modeling in materials science of electronic component” (ICM3SEC-2022). October 24–26, 2022, Moscow. Moscow: MAKS Press; 2022. P. 156—159. (In Russ.). https://doi.org/10.29003/m3098.ММMSEC-2022/156-159

9. Morozov A.Y., Abgaryan K.K., Reviznikov D.L. Simulation modeling of an analogue spiking neural network based on memristic elements using parallel technologies. Proceed. of the IV Inter. сonf. “Mathematical modeling in materials science of electronic component” (ICM3SEC-2022). October 24–26, 2022, Moscow. Moscow: MAKS Press; 2022. P. 150—156. (In Russ.). https://doi.org/10.29003/m3097.ММMSEC-2022/150-156

10. Abgaryan K.K. Designing software systems for modeling in the material science of electronic components. Proceed. of the IV Inter. сonf. “Mathematical modeling in materials science of electronic component” (ICM3SEC-2022). October 24–26, 2022, Moscow. Moscow: MAKS Press; 2022. P. 62—68. (In Russ.). https://doi.org/10.29003/m3069.ММMSEC-2022/62-68

11. Saenko A.V., Zheits V.V., Bilyk G.E., Malyukov S.P. Numerical modeling of photovoltaic characteristics of solar cells based on a TiO2/Cu2O heterojunction. Proceed. of the IV Inter. сonf. “Mathematical modeling in materials science of electronic component” (ICM3SEC-2022). October 24–26, 2022, Moscow. Moscow: MAKS Press; 2022. P. 102—105. (In Russ.). https://doi.org/10.29003/m3082.ММMSEC-2022/102-105

12. Abgaryan K.K., Kolbin I.S. Application of the modal suppression method to calculate the effective thermal conductivity coefficient of superlattices. Proceed. of the IV Inter. сonf. “Mathematical modeling in materials science of electronic component” (ICM3SEC-2022). October 24–26, 2022, Moscow. Moscow: MAKS Press; 2022. P. 77—79. (In Russ.). https://doi.org/10.29003/m3073.ММMSEC-2022/77-79

13. Khvesyuk V.I. Thermal physics for nano electronics. Proceed. of the IV Inter. сonf. “Mathematical modeling in materials science of electronic component” (ICM3SEC–2022). October 24–26, 2022, Moscow. Moscow: MAKS Press; 2022. P. 120—123. (In Russ.)

14. Khvesyuk V.I., Zheng J., Barinov A.A. Mean free paths of phonons in nanofilms. Proceed. of the IV Inter. сonf. “Mathematical modeling in materials science of electronic component” (ICM3SEC-2022). October 24–26, 2022, Moscow. Moscow: MAKS Press; 2022. P. 124—127. (In Russ.). https://doi.org/10.29003/m3088.ММMSEC-2022/120-123

15. Matyushkin I.V., Telminov O.A., Mikhaylov A.N. Accounting for heat release in small volumesof matter on the example of the growth of ZnO micro-rods: search for a modeling technique. Proceed. of the IV Inter. сonf. “Mathematical modeling in materials science of electronic component” (ICM3SEC-2022). October 24–26, 2022, Moscow. Moscow: MAKS Press; 2022. P. 68—71. (In Russ.). https://doi.org/10.29003/m3070.ММMSEC-2022/68-71

16. Nastovjak A.G., Shterental D.V., Neizvestny I.G., Shwartz N.L. simulation of high-temperature annealing of GaAs nanowire array. Proceed. of the IV Inter. сonf. “Mathematical modeling in materials science of electronic component” (ICM3SEC-2022). October 24–26, 2022, Moscow. Moscow: MAKS Press; 2022. P. 71—74. (In Russ.). https://doi.org/10.29003/m3071.ММMSEC-2022/71-74

17. Abgaryan K.K., Gavrilov E.S. Methods of creating an integration platform for solving material science problems. Proceed. of the IV Inter. сonf. “Mathematical modeling in materials science of electronic component” (ICM3SEC-2022). October 24–26, 2022, Moscow. Moscow: MAKS Press; 2022. P. 18—23. (In Russ.). https://doi.org/10.29003/m3059.ММMSEC-2022/18-23

18. Volovich K., Denisov S., Kondrashev V. Data processing network architecture for parallel computing in a high-performance complex for materials science problems. Proceed. of the IV Inter. сonf. “Mathematical modeling in materials science of electronic component” (ICM3SEC-2022). October 24–26, 2022, Moscow. Moscow: MAKS Press; 2022. P. 30—36. (In Russ.). https://doi.org/10.29003/m3061.ММMSEC-2022/30-36

19. Kiselyova N.N., Dudarev V.A., Senko O.V., Dokukin A.A., Kuznetsova Yu.O. Application of machine learning methods for the design of new inorganic compounds promising for electronics. Proceed. of the IV Inter. сonf. “Mathematical modeling in materials science of electronic component” (ICM3SEC-2022). October 24–26, 2022, Moscow. Moscow: MAKS Press; 2022. P. 36—39. (In Russ.). https://doi.org/10.29003/m3062.ММMSEC-2022/36-39

20. Suchaneck G., Kalanda N., Yarmolich M., Artiukh E., Gerlach G., Sobolev N. Magnetization of magnetically inhomogeneous Sr2FeMoO6 nanoparticles. Proceed. of the IV Inter. сonf. “Mathematical modeling in materials science of electronic component” (ICM3SEC-2022). October 24–26, 2022, Moscow. Moscow: MAKS Press; 2022. P. 58. (In Russ.). https://doi.org/10.29003/m3067.ММMSEC-2022/58-58

21. Volovich K., Denisov S., Kondrashev V. Data processing network architecture for parallel computing in a high-performance complex for materials science problems. Proceed. of the IV Inter. сonf. “Mathematical modeling in materials science of electronic component” (ICM3SEC-2022). October 24–26, 2022, Moscow. Moscow: MAKS Press; 2022. P. 24—29. (In Russ.). https://doi.org/10.29003/m3061.ММMSEC-2022/30-36

22. Izotova G.S. Report on the results of the expert analytical event “Identification of the main reasons constraining scientific development in the Russian Federation: assessment of scientific infrastructure, sufficiency of motivational measures, ensuring the attractiveness of the work of leading scientists”. Accounts Chamber of the Russian Federation. 2020. 53 p. (In Russ.). http://fgosvo.ru/uploadfiles/Work_materials_disscusion/sp.pdf (accessed on 06.10.2021).

23. Chen H. (ed.). Large research infrastructures development in China: A Roadmap to 2050. Berlin, Heidelberg: Science Press Beijing and Springer-Verlag; 2010. 148 p.

24. Large research infrastructures: Report on roadmapping of large research infrastructures (2008). OECD Global Science Forum. 2010. http://www.oecd.org/sti/inno/47057832.pdf (accessed on 06.10.2021).

25. Report on establishing large international research infrastructures: issues and options. OECD Global Science Forum. 2010. http://www.oecd.org/sti/inno/47057832.pdf (accessed on 06.10.2021).

26. Zatsarinnyy A.A. The experience of the FRC CSC RAS in creating a digital platform for scientific research in the cause of digital transformation. 2020 Inter. scient. and techn. conf. “Modern Computer Network Technologies” (MoNeTeC). October 27–29, 2020, Moscow. IEEE; 2020. P. 1—8. https://doi.org/10.1109/MoNeTeC49726.2020.9258073


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For citations:


Zatsarinnyy A.A., Abgaryan K.K. On the relevance of the problem of synthesis of new materials in the conditions of innovative industrial development. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2023;26(4):342-350. (In Russ.) https://doi.org/10.17073/1609-3577j.met202307.560. EDN: HWZZVP

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ISSN 1609-3577 (Print)
ISSN 2413-6387 (Online)