Problems of synthesis of connectionist representations and continuum models of the environs on the example of memristors
https://doi.org/10.17073/1609-3577j.met202311.567
Abstract
The ways of complementarity of the local parameters of the С-system and the integral characteristics of the environment in which it is immersed are discussed. Examples of such model situation are the calculation of the conductivity of the memristor filament region, percolation phenomena, and chemically enhanced photoresists. The simplest case of interaction between a С-system and a medium is associated with the jumping conductivity of polymers, and for the analysis of more complex cases, we have identified 4 pairs of oppositions. For the first time, a hidden contradiction was discovered in the formal definition of the С-system. To avoid this contradiction in materials science models, it is necessary to use fast variables when describing transport signals. We formalize the concept of a medium as a tuple of continuous functions, for example, an electric field given in space. These functions are interpolated over a certain volume, from which small-radius balls located at the points of the elements of the С-system are punched out. The immediate semantics of such a ball is a nanocrystal inside an amorphous dielectric.
Supporting agencies: This work was supported by the National Center for Physics and Mathematics, direction No. 9 “Artificial intelligence and big data in technical, industrial, natural and social systems”.
About the Author
I. V. Matyushkin
Molecular Electronics Research Institute, JSC;
National Research University of Electronic Technology
Russian Federation
Russian Federation
6-1 Acad. Valieva Str., Zelenograd, Moscow 124460;
1 Shokin Sq., Zelenograd, Moscow 124498
Igor V. Matyushkin — Cand. Sci. (Phys.-Math.) (1); Associate Professor of the Department of Design and Construction of Integrated Circuits (2)
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Matyushkin I.V. Problems of synthesis of connectionist representations and continuum models of the environs on the example of memristors. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2024;27(2):117-124. (In Russ.) https://doi.org/10.17073/1609-3577j.met202311.567
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