Investigation of the cobalt ions diffusion processes in calcium orthovanadate crystals

The dielectric properties and switching processes of polarization in single crystals of strontium barium niobate S_r0.61Ba_0.39Nb₂O₆ (SBN61) doped with holmium (Ho³⁺) and thulium (Tm³⁺) ions were studied. Dielectric measurements showed that the incorporation of these ions in the crystal lattice led to an increase of the dielectric constant (ε) and an ambiguous change in dielectric loss tangent (tan δ). In addition, the effect of a constant electric field (polarizing effect) on the dielectric parameters of the crystals was studied. Dielectric permittivity of SBN61 crystals undoped and doped with Tm³⁺ (SBN61:Tm) was decreased after the dc-field, while a value of ε for SBN61 doped with Ho³⁺ (SBN61:Ho) and holmium + thulium ions (SBN61:Tm+Ho) was increased. For all samples, the dielectric loss tangent became lower due to polarizing process. Temperature behavior study of the dielectric constant revealed that the presence of thulium and holmium ions into SBN61 crystal lattice caused decreasing the maximum value of ε in the phase transition region and broadening the Curie region. For the SBN61:Ho and SBN61:Tm+Ho samples, the broadest diffusion of the dielectric constant maximum was observed near the phase transition region. On the base of ferroelectric hysteresis loops, the polarization switching processes were studied in the samples under an ac-field up to 4 kV/cm at room temperature. Main features of the switching processes of the SBN61 samples doped with Ho³⁺ and Tm³⁺ were noted. In crystals doped with holmium ions as well with a low thulium ions concentration, the coercive field value (EC) was significantly higher and the switched polarization (P) was lower as compared to pure SBN61 samples and crystals doped with a high holmium concentration. The study results obtained for SBN crystals doped with thulium and holmium ions were discussed on the base of structural disorder and domain structure changes depending on the type and concentration of the doping ions.

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