Directional crystallization of Ge1-xSix solid solutions

As a result of the analysis of the published results of studies on obtaining solid solutions of germanium – silicon, the possibilities of developing the technology of obtaining homogeneous crystals by methods of directional crystallization of melts are estimated.
Technological capabilities achieved in the last two or three decades make it possible to obtain Ge-Si single crystals with both variable and constant axial composition in the entire continuous series of solid solutions, and thereby meet the needs of scientific research. However, for the profitability of obtaining ingots of solid solutions on an industrial scale, complete automation of the technology of growing Ge–Si single crystals based on the methods of crucibleless zone melting and Czochralski is required. In the case of using these methods, the possibility of achieving high temperature gradients at the crystallization front allows for the growth of perfect single crystals at significantly higher rates of melt crystallization.
It was established that Ge_1-xSi_x solid solutions enriched with Ge have not been sufficiently studied and require fundamental research in connection with promising practical application. A design of a modified setup is proposed that allows for the synthesis of materials with a given composition and uniform distribution of the second component along the length of the ingot at alloying levels of less than 1%.
The thermal units developed during the study allowed for thermal conditions favorable for the formation of the Ge_1-xSi_x solid solution. The results of energy dispersive X-ray microanalysis indicate the incorporation of silicon into the polycrystalline germanium matrix and its distribution along the entire length of the crystal.

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