Долговременная релаксация электропроводности CVD-графена
Abstract
В образцах поликристаллического CVD-графена на подложке Si/SiO2 размером 5×10 мм2 исследованы изменения (релаксация) зависимости поверхностной электропроводнсти σ□(T) в интервале температур 2 ≤ T ≤ 300 К во времени. Описано наблюдаемое увеличение проводимости со временем при хранении CVD-графена как в воздушной так и гелиевой атмосферах, которое приписано удалению молекул воды с интерфейса графен/SiO2. Показано, что после переноса синтезированного графена на слой SiO2 подложки Si/SiO2 зависимость его слоевой проводимости от температуры σ□(T) описывается комбинацией двумерных квантовых поправок к формуле проводимости Друде в условиях слабой локализации и активационных механизмов. Наблюдаемое изменение поведения кривых поверхностной проводимости со времени σ□(T,t) сопровождается снижением вклада активационного механизма до полного его исчезновения.
About the Authors
А. ХарченкоBelarus
А. Федотов
Институт ядерных проблем Белорусского государственного университета
Belarus
Ю. Федотова
Belarus
М. Чичков
Russian Federation
М. Малинкович
Russian Federation
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