THE SIMULATION OF CARBON MATERIAL STRUCTURE BASED ON POLYACRYLONITRILE OBTAINED UNDER IR HEATING
https://doi.org/10.17073/1609-3577-2013-3-39-42
Abstract
We have for the first time determined using the MNDO semiempirical quantum chemical model for a carbon material (CM) structure based on heat treated polyacrylonitrile (PAN) that an increase in the N content from 14 to 18 atoms in CM monoatomic layers C46N14H10, C44N16H12, and C42N18H14 and in the H content from 12 to 22 atoms in CM monoatomic layers C44N16H12 and C44N16H22 leads to a decrease in the binding energy (EB) from 7,40 and 7,12 to 6,88 and 6,25 eV, respectively, and to an increase in the difference between the maximum and minimum bond length (∆l), between the maximum and minimum valence angle (∆θ), and between the maximum and minimum local charge (∆q) from 0,176 Е, 12,0°, and 0,487 to 0,238 Е, 20,8°, and 0,613, respectively, and promotes curving of the CM structure. Quantum chemical simulation results are confirmed by the element analysis of the CM specimens and FeNi3/C nanocomposite. When the IR heating temperature was increased from 30 to 500 °С, the concentrations of N (СN) and H (СH) in the CM and in the FeNi3/C nano-composite decreased from 27 to 18 and 10 wt. % and from 6 to 1 and 0.5 wt. %, respectively.
About the Authors
L. V. Kozhitov
National University of Science and Technology «MISIS»
Russian Federation
Russian Federation
N. Ch. V’et
National University of Science and Technology «MISIS»
Russian Federation
Russian Federation
A. V. Kostikova
National University of Science and Technology «MISIS»
Russian Federation
Russian Federation
I. V. Zaporotskova
Volgograd State University
Russian Federation
Russian Federation
V. V. Kozlov
Institute for Petrochemical Synthesis, Russian Academy of Sciences
Russian Federation
Russian Federation
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Review
For citations:
Kozhitov L.V., V’et N.Ch., Kostikova A.V., Zaporotskova I.V., Kozlov V.V. THE SIMULATION OF CARBON MATERIAL STRUCTURE BASED ON POLYACRYLONITRILE OBTAINED UNDER IR HEATING. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2013;(3):39-42. (In Russ.) https://doi.org/10.17073/1609-3577-2013-3-39-42
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