STRUCTURAL STUDIES OF LARGE [100]−ORIENTED CZOCHRALSKI GROWN GASB SINGLE CRYSTALS
https://doi.org/10.17073/1609-3577-2013-4-3-8
Abstract
The properties of Chochralski grown [100] undoped GaSb crystals with diameters > 60 mm have been studied. We found that the dislocation density reduction in large undoped crystals can be achieved both by the well known technological approaches and by isovalent impurity (indium) doping. We show that the introduction of two additional annealing stages, one being close to the moment the crystal reaches the target diameter (the length of this stage is 1 hour, the temperature being close to the melting point) and the other being 3 h long post−growth annealing at 650 °C, reduces the dislocation density in ~60 mm diameter crystals to (3—5) · 103 cm−2. We found that dislocations in large GaSb crystals form in two distinct temperature ranges as evidenced by the difference in the morphology of the dislocation traces. The dislocation critical stresses were identified in the 420—690 °C temperature range. It is demonstrated that isovalent doping (In, concentration in the range (2—4) · 1018 cm−3 leads to a significant incr ase in dislocation critical stresses and, accordingly, to a drastic decrease in the average dislocation density to (4—5) · 102 cm−2. This opens new prospects for obtaining large low dislocation density GaSb crystals.
About the Authors
V. S. Ezhlov
JSC Giredmet
Russian Federation
Russian Federation
A. G. Milvidskaya
JSC Giredmet
Russian Federation
Russian Federation
E. V. Molodtsova
JSC Giredmet
Russian Federation
Russian Federation
M. V. Mezhennyi
JSC Optron
Russian Federation
Russian Federation
References
1. Hvostikov, V. P. Termofotoelektricheskie preobrazovateli teplovogo i koncentrirovannogo solnechnogo izlucheniya / V. P. Hvostikov, O. A. Hvostikova, P. Yu. Gazaryan, M. Z. Shvarc, V. D. Rumyancev, V. M. Andreev // Fizika i tehnika poluprovodnikov. − 2004. − V. 38, Iss. 8. − P. 988—993.
2. Levin, R. V. Termofotopreobrazovateli na osnove antimonida galliya / R. V. Levin, B. V. Pushnyi, V. P. Hvostikov, M. N. Mizerov, V. M. Andreev // Fotonika−2008: Tez. − Novosibirsk, 2008. − P. 86.
3. Danilova, T. N. Svetodiody na osnove tverdyh rastvorov GaSb dlya srednei infrakrasnoi oblasti spektra 1,6—4,4 mkm / T. N. Danilova, V. E. Zhurtanov, A. N. Imenkov, Yu. P Yakovlev. // Fizika i tehnika poluprovodnikov. − 2005. − V. 39, Iss. 11. − P. 1281— 1308.
4. Murti, M. R. 1.7—1.9 μm InxGa1−xAs/InyAl1−yAs light−emitting diodes lattice−mismatched grown on GaAs / M. R. Murti, B. Grietens, C. Van Hoof, G. J. Borghs // J. Appl. Phys. − 1995. − V. 78, N 1. − P. 578—580.
5. Alferov, Zh. I. Tendencii i perspektivy razvitiya solnechnoi energetiki / Zh. I. Alferov, V. M. Andreev, V. D. Rumyancev // Fizika i tehnika poluprovodnikov. − 2004. − V. 38, Iss. 8. − P. 937—948.
6. Mil’vidskii, M. G. Fiziko−himicheskie osnovy polucheniya razlagayushihsya poluprovodnikovyh soedinenii / M. G. Mil’vidskii, O. V. Pelevin, B. A. Saharov. − M. : Metallurgiya, 1974. − 392 p.
7. Smirnov, V. M. Sobstvennye tochechnye defekty i mikrodefekty v monokristallah antimonida galliya / V. M. Smirnov, A. A. Kalinin, V. T. Bublik, A. G. Braginskaya // Kristallografiya. − 1986. − V. 31, N 3. − P. 345—349.
8. Mezhennyi, M. V. Kriticheskie napryazheniya i temperaturnye diapazony obrazovaniya dislokacii v monokristallah fosfida indiya i antimonida galliya pri vyrashivanii iz rasplava / M. V. Mezhennyi, A. G. Braginskaya, S.S. Shifrin // Mater. 9−go sovesh. po polucheniyu profilirovannyh kristallov i izdelii sposobom Stepanova i ih primeneniyu v narodnom hozyaistve. − L., 1982. − P. 102.
Review
For citations:
Ezhlov V.S., Milvidskaya A.G., Molodtsova E.V., Mezhennyi M.V. STRUCTURAL STUDIES OF LARGE [100]−ORIENTED CZOCHRALSKI GROWN GASB SINGLE CRYSTALS. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2013;(4):13-17. (In Russ.) https://doi.org/10.17073/1609-3577-2013-4-3-8
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