DEGRADATION OF THREE–JUNCTION AMORPHOUS SI : H BASED SOLAR CELLS
https://doi.org/10.17073/1609-3577-2013-4-39-42
Abstract
The operating experience of hydrogenated amorphous silicon (a−Si : H) based solar cells has shown that besides their low efficiency this type of photovoltaics degrade much faster compared to single crystal based solar cells. As far as the processes deter- mining the degradation of amorphous materials based solar cells are not well studied, and the degradation of similar cells without light exposure has also been reported, we conducted an experiment to compare the temporal change characteristics of main solar cell parameters in darkness and under natural light. The demonstration of short circuit current reduction in darkness aged solar cells should be considered as one of the most interesting results of the work. Moreover we have shown that the change of this parameter is on average the same for the illuminated cells, while for some cells short circuit current reduction is substantially higher. This is indicative of the fact that the observed effect is not related to the Staebler—Wronski effect.
About the Authors
V. N. Murashev
National University of Science and Technology MISIS
Russian Federation
Russian Federation
S. A. Legotin
National University of Science and Technology MISIS
Russian Federation
Russian Federation
A. A. Krasnov
National University of Science and Technology MISIS
Russian Federation
Russian Federation
A. A. Dudkin
KVANT Research and Production Enterprise
Russian Federation
Russian Federation
D. A. Zezin
National Research University Moscow Energy Institute
Russian Federation
Russian Federation
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Review
For citations:
Murashev V.N., Legotin S.A., Krasnov A.A., Dudkin A.A., Zezin D.A. DEGRADATION OF THREE–JUNCTION AMORPHOUS SI : H BASED SOLAR CELLS. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2013;(4):39-42. (In Russ.) https://doi.org/10.17073/1609-3577-2013-4-39-42
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