RESEARCH OF MORPHOLOGY AND STRUCTURE OF 3C-SIC THIN FILMS ON SILICON BY ELECTRON MICROSCOPY AND X-RAY DIFFRACTOMETRY
https://doi.org/10.17073/1609-3577-2013-2-44-48
Abstract
Silicon carbide thin epilayers were grown on Si substrates by pulsed laser ablation of ceramic target. The influence of wafer temperature on morphological and structural properties of SiC layers was investigated by scanning electron microscopy, transmission electron microscopy and X-ray diffractometry.
About the Authors
A. S. Gusev
National Research Nuclear University «MEPhI»
Russian Federation
Russian Federation
S. M. Ryndya
Karpov Institute of Physical Chemistry
Russian Federation
Russian Federation
A. V. Zenkevich
National Research Nuclear University «MEPhI»
Russian Federation
Russian Federation
N. I. Kargin
National Research Nuclear University «MEPhI»
Russian Federation
Russian Federation
D. V. Averyanov
National Research Nuclear University «MEPhI»
Russian Federation
Russian Federation
M. M. Grekhov
National Research Nuclear University «MEPhI»
Russian Federation
Russian Federation
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Review
For citations:
Gusev A.S., Ryndya S.M., Zenkevich A.V., Kargin N.I., Averyanov D.V., Grekhov M.M. RESEARCH OF MORPHOLOGY AND STRUCTURE OF 3C-SIC THIN FILMS ON SILICON BY ELECTRON MICROSCOPY AND X-RAY DIFFRACTOMETRY. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2013;(2):44-48. (In Russ.) https://doi.org/10.17073/1609-3577-2013-2-44-48
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