For citations:
Goldstein R.V., Makhviladze T.M., Sarychev M.E. MODELING AN INFLUENCE OF INTERNAL MECHANICAL STRESSES ON THE RATE OF GROWTH OF OXYGEN PRECIPITATES IN SILICON. Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 2012;(2):37-42. (In Russ.) https://doi.org/10.17073/1609-3577-2012-2-37-42
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